Barium bis(β-Diketonate)•tetraglyme Complexes as Potential CVD Precursors for Electronic Materials

1995 ◽  
Vol 415 ◽  
Author(s):  
Henry A. Luten ◽  
David J. Otway ◽  
William S. Rees
Keyword(s):  
Thin Film ◽  
Ionic Radius ◽  
Electronic Materials ◽  
Electronics Industry ◽  
Fluorinated Ligands ◽  
Group 2 ◽  
Volatile Precursors ◽  
Film Method ◽  
Post Deposition

ABSTRACTMOCVD, one preferred technique of the present electronics industry, has not yet emerged as the thin film method of choice for group 2 element containing materials due to the demonstrable shortcomings of the available source compounds. Most specifically, the challenge presented by the group 2 element charge/ionic radius ratio must be overcome to meet the vapor pressure requirements for CVD. To date, development of group 2 precursors suitable for MOCVD has focused mainly on the use of substituted acetylacetonate (acac) complexes. Earlier, several series of somewhat volatile precursors were developed by the use of acetylacetonate complexes containing fluorinated sidegroups. These precursors, while elegantly designed for the thermal deposition of BaF2, are not ideal for the preparation of oxide thin films. This arises from their propensity to initially form MF2, which must be reacted further in situ, or in a post-deposition treatment to yield the ultimately sought metal oxide. It is of interest, therefore, to develop stable, volatile precursors lacking fluorinated ligands.

Coherent TiN Diffusion Barriers for Sub-0.5 μm Planarized AL Technology

1994 ◽  
Vol 337 ◽  
Author(s):  
Ken Ngan ◽  
Rod Mosely ◽  
Zheng Xu ◽  
Ivo Raaijmakers
Keyword(s):  
Thin Film ◽  
Silicon Surface ◽  
Diffusion Barriers ◽  
Flow Process ◽  
Resistance Increase ◽  
Heat Treated ◽  
Treatment Technologies ◽  
Al Thin Film ◽  
Post Deposition

ABSTRACTThis paper describes in situ post deposition treatment technologies to fortify the coherent PVD TiN barrier so that it will withstand the high temperature (> 450°C) Al deposition or flow process for sub-0.5 μm planarized Al technology. The coherent PVD TiN barriers were sputtered under 3 different pressure conditions and subsequently heat treated for fortification. Such heat treated, fortified PVD TiN barriers exhibit low reactivity with Al, which is illustrated by the minimal sheet resistance increase in TiN/Al thin film stacks during the heat treatment. Furthermore, optical and SEM inspection on the silicon surface show no pitting.Leakage current of less than 50 pA has been obtained on 10K-contact chains of sub-0.5 (μm devices using a vacuum integrated coherent Ti/fortified PVD TiN/planarized Al process. This development has led to a completely vacuum integrated sub-0.5 μm PVD Al plug fill process.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth kinetics of Al2Cu in an Al-1.5Cu thin film by in Situ TEM

1993 ◽  
Vol 51 ◽  
pp. 1172-1173
Author(s):  
M. Park ◽  
S.J. Krause ◽  
S.R. Wilson
Keyword(s):  
Thin Film ◽  
In Situ Tem ◽  
Collector Plate ◽  
Transmission Electron ◽  
Device Processing ◽  
Corrosion Susceptibility ◽  
Precipitation Phenomena ◽  
Semiconductor Chips ◽  
Kinetics Of

Cu alloying in Al interconnection lines on semiconductor chips improves their resistance to electromigration and hillock growth. Excess Cu in Al can result in the formation of Cu-rich Al2Cu (θ) precipitates. These precipitates can significantly increase corrosion susceptibility due to the galvanic action between the θ-phase and the adjacent Cu-depleted matrix. The size and distribution of the θ-phase are also closely related to the film susceptibility to electromigration voiding. Thus, an important issue is the precipitation phenomena which occur during thermal device processing steps. In bulk alloys, it was found that the θ precipitates can grow via the grain boundary “collector plate mechanism” at rates far greater than allowed by volume diffusion. In a thin film, however, one might expect that the growth rate of a θ precipitate might be altered by interfacial diffusion. In this work, we report on the growth (lengthening) kinetics of the θ-phase in Al-Cu thin films as examined by in-situ isothermal aging in transmission electron microscopy (TEM).

“In-Situ Raman Spectroscopy of Electronic Processes in Fullerene Thin Films

2002 ◽  
Vol 725 ◽  
Author(s):  
S.B. Phelan ◽  
B.S. O'Connell ◽  
G. Farrell ◽  
G. Chambers ◽  
H.J. Byrne
Keyword(s):  
Thin Film ◽  
Indium Tin Oxide ◽  
Low Temperatures ◽  
In Situ Raman Spectroscopy ◽  
State Reduction ◽  
In Situ Raman ◽  
Linear Behavior ◽  
Current Voltage ◽  
Solid State Reduction

AbstractThe current voltage characteristics of C60 thin film sandwich structures fabricated by vacuum deposition on indium tin oxide (ITO) with an aluminium top electrode are presented and discussed. A strongly non-linear behavior and a sharp increase in the device conductivity was observed at relatively low voltages (∼2V), at both room and low temperatures (20K). At room temperature the system is seen to collapse, and in situ Raman measurements indicate a solid state reduction of the fullerene thin film to form a polymeric state. The high conductivity state was seen to be stable at elevated voltages and low temperatures. This state is seen to be reversible with the application of high voltages. At these high voltages the C60 film was seen to sporadically emit white light at randomly localized points analogous to the much documented Electroluminescence in single crystals.

Reordering and Crystallization of Silicon Carbide Amorphized by Neutron Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
Lance L. Snead ◽  
Martin Balden
Keyword(s):  
Thin Film ◽  
Silicon Carbide ◽  
Crystallization Kinetics ◽  
Neutron Irradiation ◽  
Onset Temperature ◽  
Kinetics Of Crystallization ◽  
Crystallization Onset Temperature ◽  
Crystallization Onset ◽  
Kinetics Of

ABSTRACTDensification and crystallization kinetics of bulk SiC amorphized by neutron irradiation is studied. The temperature of crystallization onset of this highly pure, fully amorphous bulk SiC was found to be between 875-885°C and crystallization is nearly complete by 950°C. In-situ TEM imaging confirms the onset of crystallization, though thin-film effects apparently alter the kinetics of crystallization above this temperature. It requires >1125°C for complete crystallization of the TEM foil. Annealing at temperatures between the irradiation and crystallization onset temperature is seen to cause significant densification attributed to a relaxation, or reordering, of the as-amorphized structure.

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