Coherent TiN Diffusion Barriers for Sub-0.5 μm Planarized AL Technology

1994 ◽  
Vol 337 ◽  
Author(s):  
Ken Ngan ◽  
Rod Mosely ◽  
Zheng Xu ◽  
Ivo Raaijmakers
Keyword(s):  
Thin Film ◽  
Silicon Surface ◽  
Diffusion Barriers ◽  
Flow Process ◽  
Resistance Increase ◽  
Heat Treated ◽  
Treatment Technologies ◽  
Al Thin Film ◽  
Post Deposition

ABSTRACTThis paper describes in situ post deposition treatment technologies to fortify the coherent PVD TiN barrier so that it will withstand the high temperature (> 450°C) Al deposition or flow process for sub-0.5 μm planarized Al technology. The coherent PVD TiN barriers were sputtered under 3 different pressure conditions and subsequently heat treated for fortification. Such heat treated, fortified PVD TiN barriers exhibit low reactivity with Al, which is illustrated by the minimal sheet resistance increase in TiN/Al thin film stacks during the heat treatment. Furthermore, optical and SEM inspection on the silicon surface show no pitting.Leakage current of less than 50 pA has been obtained on 10K-contact chains of sub-0.5 (μm devices using a vacuum integrated coherent Ti/fortified PVD TiN/planarized Al process. This development has led to a completely vacuum integrated sub-0.5 μm PVD Al plug fill process.

Reliability, Properties and Microstructure of W80Ti20 Diffusion Barriers Between Al-Based Metallizations and Si.

1992 ◽  
Vol 260 ◽  
Author(s):  
A. G. Dirks ◽  
R. A. M. Wolters ◽  
A. E. M. De Veirman
Keyword(s):  
Barrier Properties ◽  
Diffusion Barriers ◽  
Columnar Microstructure ◽  
Compound Formation ◽  
Actual Distribution ◽  
Alloy Films ◽  
The Relationship ◽  
Post Deposition ◽  
Deposition Conditions

ABSTRACTTungsten-rich W-Ti (or W-Ti-N) alloy films are known for their applicability as diffusion barriers in advanced silicon technology, especially in the case of aluminium-based metallizations. For a wide variety of deposition conditions and post-deposition anneal treatments these refractory-metal barriers show a columnar microstructure. In contact with aluminium the W-Ti films do not form absolute barriers, because of mutual diffusion resulting in compound formation. The reactivity of the W-Ti barriers with the Al99Si1 interconnect has been studied by in-situ resistance measurements in vacuum at temperatures of approximately 450 °C (for W-Ti alloy films) and 475 °C (for W-Ti-N alloy films). In this paper new results dealing with the relationship between deposition conditions, microstructure and barrier properties will be discussed. Furthermore, it will be shown that the actual distribution of the titanium atoms in the tungsten matrix has a substantial influence on the reactivity of the barrier film with the Al99Si1 interconnect.

Formation of Intermetallics and Grain Boundary Diffusion in Cu-Al and Au-Al Thin Film Couples

1981 ◽  
Vol 10 ◽  
Author(s):  
J. M. Vandenberg ◽  
F. J. A. Den Broeder ◽  
R. A. Hamm
Keyword(s):  
Thin Film ◽  
Hexagonal Phase ◽  
Interface Reaction ◽  
Aluminum Film ◽  
Temperature Dependent ◽  
X Ray ◽  
Wide Range ◽  
Al Thin Film ◽  
Rich Side

An in situ annealing X-ray study was applied to Cu-Al thin film couples over a wide range of copper-to-aluminum film ratios. This new technique, which has been previously described for a study on the Au-Al thin film system, enables us to make a temperature-dependent photographic X-ray analysis. The present study indicated that only a limited number of the wide variety of bulk phases form in the Cu-Al thin film interface, while some of these phases in the interface are transient. In the transient stages of the interface reaction, the f.c.c.-ordered phase β-Cu3A1 grows over the entire range of copper-to-aluminum film ratios after the first nucleation of CuA12, indicating a two-step nucleation reaction. On the aluminum-rich side, this phase transforms to a new ordered hexagonal phase β′. It could be interpreted as a superlattice of the metastable hexagonal ω phase occurring in zirconium-based alloys. The end phases are CuA1 and CuAl2.

Ultra high amorphous silicon passivation quality of crystalline silicon surface using in-situ post-deposition treatments

2014 ◽  
Vol 9 (1) ◽  
pp. 53-56 ◽  
Author(s):  
H. Meddeb ◽  
Twan Bearda ◽  
Wissem Dimassi ◽  
Yaser Abdulraheem ◽  
Hatem Ezzaouia ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Crystalline Silicon ◽  
Post Deposition

Barium bis(β-Diketonate)•tetraglyme Complexes as Potential CVD Precursors for Electronic Materials

1995 ◽  
Vol 415 ◽  
Author(s):  
Henry A. Luten ◽  
David J. Otway ◽  
William S. Rees
Keyword(s):  
Thin Film ◽  
Ionic Radius ◽  
Electronic Materials ◽  
Electronics Industry ◽  
Fluorinated Ligands ◽  
Group 2 ◽  
Volatile Precursors ◽  
Film Method ◽  
Post Deposition

ABSTRACTMOCVD, one preferred technique of the present electronics industry, has not yet emerged as the thin film method of choice for group 2 element containing materials due to the demonstrable shortcomings of the available source compounds. Most specifically, the challenge presented by the group 2 element charge/ionic radius ratio must be overcome to meet the vapor pressure requirements for CVD. To date, development of group 2 precursors suitable for MOCVD has focused mainly on the use of substituted acetylacetonate (acac) complexes. Earlier, several series of somewhat volatile precursors were developed by the use of acetylacetonate complexes containing fluorinated sidegroups. These precursors, while elegantly designed for the thermal deposition of BaF2, are not ideal for the preparation of oxide thin films. This arises from their propensity to initially form MF2, which must be reacted further in situ, or in a post-deposition treatment to yield the ultimately sought metal oxide. It is of interest, therefore, to develop stable, volatile precursors lacking fluorinated ligands.

scholarly journals In Situ Study of Dislocation Behavior in Columnar Al Thin Film on Si Substrate During Thermal Cycling

1999 ◽  
Vol 594 ◽  
Author(s):  
Charles W. Allen ◽  
Herbert Schroeder ◽  
Jon M. Hiller
Keyword(s):  
Thin Film ◽  
Thermal Cycling ◽  
Grain Structure ◽  
Dislocation Model ◽  
Si Substrate ◽  
Transmission Electron ◽  
Dislocation Behavior ◽  
Columnar Grain ◽  
Al Thin Film

AbstractIn situ transmission electron microscopy (150 kV) has been employed to study the evolution of dislocation microstructures during relatively rapid thermal cycling of a 200 nm Al thin film on Si substrate. After a few thermal cycles between 150 and 500°C, nearly stable Al columnar grain structure is established with average grain less than a μm. On rapid cooling (3–30+ °C/s) from 500°C, dislocations first appear at a nominal temperature of 360–380°C, quickly multiplying and forming planar glide plane arrays on further cooling. From a large number of such experiments we have attempted to deduce the dislocation evolution during thermal cycling in these polycrystalline Al films and to account qualitatively for the results on a simple dislocation model.

An in situ X-ray study of phase formation in CuAl thin film couples

1982 ◽  
Vol 97 (4) ◽  
pp. 313-323 ◽  
Author(s):  
J.M. Vandenberg ◽  
R.A. Hamm
Keyword(s):  
Thin Film ◽  
Phase Formation ◽  
X Ray ◽  
Al Thin Film

Kinetics of Phase Formation in Cu-Al Thin Films Couples Studied by In-Situ X-Ray and Rutherford Backscattering Analysis.

1983 ◽  
Vol 25 ◽  
Author(s):  
R. A. Hamm ◽  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
High Vacuum ◽  
Interface Reaction ◽  
Annealing Treatment ◽  
Rutherford Backscattering ◽  
X Ray ◽  
Different Temperatures ◽  
Al Thin Film ◽  
Backscattering Analysis

X-ray diffraction (XRD) and Rutherford backscattering analysis (RBS) have been used independently to study the interface reaction of copperaluminum thin film couples during in-situ annealing in the temperature range 157°–220°C. For the X-ray studies a high vacuum annealing system was constructed on a Huber-Guinier thin film goniometer base1. This system enabled us to monitor the thin film interface reaction via changes of integrated X-ray intensities during the annealing treatment. RBS analysis was carried out with an existing in-situ heating stage. Using both techniques isothermal annealing experiments were carried out for four different temperatures. For this study 900Å Cu/1600Å Al and 1800Å Cu/3200Å Al thin film couples were prepared by sequential evaporation onto water cooled oxidized <111> silicon and MgO substrates.

scholarly journals Influence of Post-deposition Annealing Temperature on the Properties of GZO/Al Thin Film

2014 ◽  
Vol 47 (2) ◽  
pp. 81-85 ◽  
Author(s):  
Sun-Kyung Kim ◽  
Seung-Hong Kim ◽  
So-Young Kim ◽  
Jae-Hyun Jeon ◽  
Tae-Kyung Gong ◽  
...  
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Post Deposition Annealing ◽  
Al Thin Film ◽  
Post Deposition
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