Reproducible growth of Highly Oriented (OO1) YSZ Films on Amorphous AiO2 Substrates by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
G. Doubinina ◽  
G. T. Stauf
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Silicon On Insulator ◽  
Buffer Layers ◽  
Amorphous Substrate ◽  
Fundamental Understanding ◽  
Amorphous Substrates ◽  
Potential Applications ◽  
Superconductor Thin Films ◽  
Deposition Conditions

ABSTRACTThe possibility of growing crystallographically aligned films of good quality on polycrystalline or amorphous substrates is of great interest, both for fundamental understanding of film growth mechanisms, and for potential applications such as buffer layers for silicon-on-insulator devices and an epitaxial transition layer for cuprate superconductor thin films grown on substrates with large misfits. Deposition conditions for yttria-stabilized zirconia (YSZ) thin films were investigated and optimized, and highly (001) oriented YSZ films were reproducibly prepared on amorphous substrates by MOCVD. We believe that the formation of a highly oriented crystalline film on an amorphous substrate can be interpreted in terms of the inherent features of MOCVD process, and a working model of this process is suggested.

Al films as buffer layers for high-temperature superconducting thin films on amorphous substrates

1999 ◽  
Vol 9 (2) ◽  
pp. 1669-1672 ◽  
Author(s):  
S. Hontsu ◽  
M. Nakamori ◽  
A. Fujimaki ◽  
H. Tabata ◽  
J. Ishii ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Buffer Layers ◽  
Superconducting Thin Films ◽  
High Temperature Superconducting ◽  
Amorphous Substrates

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Growth and Structure of in-plane Textured MgO Thin Films Deposited on Amorphous Substrates using ion-beam-assisted E-Beam Evaporation

1997 ◽  
Vol 504 ◽  
Author(s):  
Connie P. Wang ◽  
Khiem B. Do ◽  
Ann F. Marshall ◽  
Theodore H. Geballe ◽  
Malcolm R. Beasley ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Film Growth ◽  
Early Stage ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Grain Structure ◽  
Structure Evolution ◽  
Stages Of Growth ◽  
Amorphous Substrates

ABSTRACTIn-plane aligned MgO thin films (∼100Å) have been obtained on various amorphous substrates by Ar+ ion-assisted electron-beam evaporation. Based on RHEED and cross-section TEM, we have shown that the MgO texture appears at a very early stage of film growth and is optimized at a thickness of around 100Å. Optimal thickness is the stage at which the surface is fully covered by MgO crystallites. The planar-view TEM of grain structure evolution in samples at different stages of growth reveals the dynamics of the texture developing process. Small, (100)-faceted MgO grains were observed both in planar-view and cross-section TEM images.

Growth of Cubic SiC Thin Films on Silicon from Single Source Precursors by Supersonic Jet Epitaxy

1996 ◽  
Vol 441 ◽  
Author(s):  
Jin-Hyo Boo ◽  
Scott A. Ustin ◽  
Wilson Ho ◽  
H. Paul Maruska ◽  
Peter E. Norris ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Supersonic Jet ◽  
Silicon On Insulator ◽  
X Ray Diffraction ◽  
Molecular Precursors ◽  
Transmission Electron ◽  
Supersonic Jet Epitaxy ◽  
Soi Substrates

AbstractCubic SiC thin films have been grown by supersonic jet epitaxy of single molecular precursors on Si(100), Si(111) and Separation by IMplanted OXygen (SIMOX) silicon on insulator (SOI) substrates at temperatures in the range 780 - 1000 °C. Real-time, in situ optical reflectivity was used to monitor the film growth. Films were characterized by ellipsometry, x-ray diffraction (XRD), and transmission electron microscopy (TEM). Monocrystalline, crack-free epitaxial cubic SiC thin films were successfully grown at 830 °C on carbonized Si(111) substrates using supersonic molecular jets of dimethylisopropylsilane, (CH3)2CHSiH(CH3)2, and diethylmethylsilane, (CH3CH2)2SiHCH3. Highly oriented cubic SiC thin films in the [100] direction were obtained on SIMOX(100) at 900 °C with dimethylisopropylsilane and on Si(100) at 1000 °C with diethylmethylsilane. A carbonized Si(100) surface was found to enhance SiC deposition from diethylmethylsilane at a growth temperature of 950 °C.

The Origin of Stress in Co-Cr Alloy Thin Films Deposited by Magnetron Sputtering

1991 ◽  
Vol 239 ◽  
Author(s):  
Zhi-Feng Zhou ◽  
Yu-Dian Fan
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Growth Process ◽  
Film Growth ◽  
Perpendicular Magnetic Recording ◽  
Glass Substrates ◽  
Planar Magnetron ◽  
Film Substrate ◽  
Defect Elimination ◽  
Deposition Conditions

ABSTRACTCo-Cr alloy thin films are considered as an applicable perpendicular magnetic recording medium, and their mechanical properties such as internal stress can not be neglected. In this experiment, Co-Cr films are deposited on glass substrates by D. C planar magnetron sputtering, and the effects of film thickness, Ni-Fe underlayer as well as substrate temperature on the stress are studied respectively. The stresses are all tensile in all cases, and the stress existing at the film-substrate interface is very small. According to the above experimental results and the structure analysis of the films, the atomic peening effect produced by the rebounded working gas atoms can be negligible, and the stress is thought to originate from the film growth process but not from the inter-facial effect. Therefore, the structural defect elimination model is proposed (here the defects mainly include vacancies and grain boundaries). With this model, the origin of the tensile stress as well as the relations between the stress and the deposition conditions are explained qualitatively.

scholarly journals Impact of NiOxBuffer Layers on the Dielectric Properties of BaTiO3Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Hui Du ◽  
Yang Li ◽  
Wei Zheng Liang ◽  
Yu Xuan Wang ◽  
Min Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Health Monitoring ◽  
Buffer Layers ◽  
Piezoelectric Thin Films ◽  
Potential Applications ◽  
General Test ◽  
Structural Metals ◽  
Nickel Substrates

Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3(BTO)] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD) method using NiOxas the buffer layers. The NiOxbuffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOxbuffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to theJ-Vcharacteristic curves.

Characterization of yttria‐stabilized zirconium oxide buffer layers for high‐temperature superconductor thin films

1988 ◽  
Vol 64 (11) ◽  
pp. 6502-6504 ◽  
Author(s):  
J‐W. Lee ◽  
T. E. Schlesinger ◽  
A. K. Stamper ◽  
M. Migliuolo ◽  
D. W. Greve ◽  
...  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Zirconium Oxide ◽  
High Temperature Superconductor ◽  
Buffer Layers ◽  
Superconductor Thin Films

Growth of Cerium Oxide Buffer Layers and Superconducting thin films on Silicon

1992 ◽  
Vol 275 ◽  
Author(s):  
S Amirhaghi ◽  
F Beech ◽  
V Craciun ◽  
A Sajjadi ◽  
M Vickers ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Film Growth ◽  
Wave Length ◽  
Amorphous Layer ◽  
Buffer Layers ◽  
Native Oxide ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Laser Wave

ABSTRACTFilms of CeO2 have been grown on Si and glass substrates using the laser ablation deposition technique. X-ray diffraction measurements for the films deposited on glass indicated that they are the same as films grown on Si covered with the native oxide. This evidence supports a picture in which chemical rather than crystal-lographic effects constrain the film growth. The crystal quality for films grown on Si was shown to improve with increasing film thickness away from the amorphous layer. Low cooling rates as well as reduced film thickness were effective in avoiding the formation of micro-cracks. The surface morphology was shown to be dependent on the laser wave-length as well as the oxygen partial pressure. Thin films of YBa2Cu3O7δ could easily be grown on CeO2/Si showing c-axis orientation, whereas the growth of BiSrCaCuO (2212) on CeO2/Si resulted in the two films mixing with each other.

Sign in / Sign up

Export Citation Format

Share Document