Growth and Structure of in-plane Textured MgO Thin Films Deposited on Amorphous Substrates using ion-beam-assisted E-Beam Evaporation

1997 ◽  
Vol 504 ◽  
Author(s):  
Connie P. Wang ◽  
Khiem B. Do ◽  
Ann F. Marshall ◽  
Theodore H. Geballe ◽  
Malcolm R. Beasley ◽  
...  
Keyword(s):  
Thin Films ◽  
Cross Section ◽  
Film Growth ◽  
Early Stage ◽  
Ion Beam ◽  
Electron Beam Evaporation ◽  
Grain Structure ◽  
Structure Evolution ◽  
Stages Of Growth ◽  
Amorphous Substrates

ABSTRACTIn-plane aligned MgO thin films (∼100Å) have been obtained on various amorphous substrates by Ar+ ion-assisted electron-beam evaporation. Based on RHEED and cross-section TEM, we have shown that the MgO texture appears at a very early stage of film growth and is optimized at a thickness of around 100Å. Optimal thickness is the stage at which the surface is fully covered by MgO crystallites. The planar-view TEM of grain structure evolution in samples at different stages of growth reveals the dynamics of the texture developing process. Small, (100)-faceted MgO grains were observed both in planar-view and cross-section TEM images.

Nucleation and Early Growth of Sputtered thin Films

1970 ◽  
Vol 28 ◽  
pp. 516-517
Author(s):  
Dudley M. Sherman ◽  
Thos. E. Hutchinson
Keyword(s):  
Thin Films ◽  
Electron Beam ◽  
Ion Beam ◽  
Ion Source ◽  
Water Cooling ◽  
Stages Of Growth ◽  
Lens Assembly ◽  
Microscope Technique ◽  
Ion Beam Sputter Deposition

The in situ electron microscope technique has been shown to be a powerful method for investigating the nucleation and growth of thin films formed by vacuum vapor deposition. The nucleation and early stages of growth of metal deposits formed by ion beam sputter-deposition are now being studied by the in situ technique.A duoplasmatron ion source and lens assembly has been attached to one side of the universal chamber of an RCA EMU-4 microscope and a sputtering target inserted into the chamber from the opposite side. The material to be deposited, in disc form, is bonded to the end of an electrically isolated copper rod that has provisions for target water cooling. The ion beam is normal to the microscope electron beam and the target is placed adjacent to the electron beam above the specimen hot stage, as shown in Figure 1.

TEM Characterization of As-Deposited and Annealed Ni/Al Multilayer Thin Film

2010 ◽  
Vol 16 (6) ◽  
pp. 662-669 ◽  
Author(s):  
S. Simões ◽  
F. Viana ◽  
A.S. Ramos ◽  
M.T. Vieira ◽  
M.F. Vieira
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Cross Section ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Multilayer Thin Films ◽  
Tem Analysis ◽  
Plan View ◽  
Transmission Electron

AbstractReactive multilayer thin films that undergo highly exothermic reactions are attractive choices for applications in ignition, propulsion, and joining systems. Ni/Al reactive multilayer thin films were deposited by dc magnetron sputtering with a period of 14 nm. The microstructure of the as-deposited and heat-treated Ni/Al multilayers was studied by transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) in plan view and in cross section. The cross-section samples for TEM and STEM were prepared by focused ion beam lift-out technique. TEM analysis indicates that the as-deposited samples were composed of Ni and Al. High-resolution TEM images reveal the presence of NiAl in small localized regions. Microstructural characterization shows that heat treating at 450 and 700°C transforms the Ni/Al multilayered structure into equiaxed NiAl fine grains.

Dynamics of Microstructure in the Early Stages of Ion Beam Assisted Film Growth

1991 ◽  
Vol 237 ◽  
Author(s):  
Harry A. Atwater ◽  
C. J. Tsai ◽  
S. Nikzad ◽  
M.V.R. Murty
Keyword(s):  
Thin Films ◽  
Epitaxial Growth ◽  
Recent Progress ◽  
Film Growth ◽  
Ion Beam ◽  
Surface Interactions ◽  
Low Energy ◽  
Early Stages ◽  
Semiconductor Thin Films ◽  
Nucleation Mechanisms

ABSTRACTRecent progress in low energy ion-surface interactions, and the early stages of ion-assisted epitaxy of semiconductor thin films is described. Advances in three areas are discussed: dynamics of displacements and defect incorporation, nucleation mechanisms, and the use of ion bombardment to modify epitaxial growth kinetics in atrulysurface-selective manner.

Reactive Phase Formation in Thin Films: Evolution of Grain Structure

1995 ◽  
Vol 403 ◽  
Author(s):  
K. Barmak ◽  
C. Michaelsent ◽  
J. Rickman ◽  
M. Dahmstt
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Formation ◽  
Experimental Studies ◽  
Grain Structure ◽  
Structure Evolution ◽  
Future Research ◽  
Polycrystalline Materials ◽  
Product Phase ◽  
Nucleation Kinetics

AbstractIt is a well known fact that the properties and performance of polycrystalline materials, including polycrystalline thin films, are strongly affected by the grain structure. Therefore, in treating reactive phase formation in these films, it is (or it will inevitably be) necessary to quantify the grain structure of reactant and product phases and its evolution during the course of the reaction. Theoretical models and the conventional view of thin film reactions, however, have been largely extensions, to small and finite dimensions, of theories and descriptions developed for bulk diffusion couples. These models and descriptions primarily focus on the growth stage and to a much lesser extent on the nucleation stage. Consequently, these models and descriptions are not able to treat the development of product phase grain structure. Recent calorimetric investigations of several thin film systems demonstrate the importance of nucleation kinetics (and hence nucleation barriers) in product phase formation and provide quantitative measures of the thermodynamics and kinetics of formation of the product phases, thereby allowing some degree of comparison with reaction models. Furthermore, microstructural investigations of thin-film reactions demonstrate the non-planarity of the growth front and highlight the role of reactant-phase grain boundaries. In this paper, a summary of these experimental studies and recent theoretical treatments, which combine nucleation and growth in an integrated manner, is presented, with particular emphasis on the Nb/Al system. These experiments and models lead to a new view of reactive phase formation and grain structure evolution as one in which the latter is an integral part of the former. Based on this view, directions for future research are discussed.

Ion beam analysis of laser-deposited high Tc YBa2Cu3O7 superconducting thin films

1990 ◽  
Vol 5 (9) ◽  
pp. 1793-1798 ◽  
Author(s):  
Rajiv K. Singh ◽  
J. Narayan
Keyword(s):  
Thin Films ◽  
Elastic Scattering ◽  
Cross Section ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Scattering Cross Section ◽  
Superconducting Thin Films ◽  
Ion Channeling ◽  
Scattering Cross ◽  
Proton Elastic Scattering

We have performed Rutherford backscattering spectrometry, non-Rutherford proton elastic scattering, and axial ion channeling analysis to determine the composition, the crystallinity, and the epitaxial quality of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 and (100) yttria stabilized zirconia (YSZ) substrates. YBa2Cu3O7 superconducting thin films were fabricated both by high and low temperature laser ablation techniques. The former method requires high temperature annealing in oxygen to recover the superconducting properties, whereas in the latter method as-deposited in situ superconducting thin films are formed at low processing temperatures (500 °C–650 °C). Helium ions in the energy range of 2.0–2.5 MeV were used to determine the relative stoichiometries of the heavier atomic number elements (Y, Ba, Cu) in the film, but are not sensitive enough to determine the relative amount of oxygen in the superconducting phase. The detection sensitivities to oxygen can be greatly enhanced by using the proton elastic scattering [16O(p,p) 16O] reaction, which was found to increase the scattering cross section by a factor of 3 to 5 relative to the Rutherford scattering cross section. The ion-channeling of YBa2Cu3O7 superconducting thin films on (100) SrTiO3 substrates showed excellent minimum channeling yields corresponding to epitaxial growth, but the presence of defects increased the channeling yields for films deposited on (100) YSZ substrates. The ion channeling yields are compared with the microstructure of the films determined by transmission electron microscopy.

Reproducible growth of Highly Oriented (OO1) YSZ Films on Amorphous AiO2 Substrates by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
G. Doubinina ◽  
G. T. Stauf
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Silicon On Insulator ◽  
Buffer Layers ◽  
Amorphous Substrate ◽  
Fundamental Understanding ◽  
Amorphous Substrates ◽  
Potential Applications ◽  
Superconductor Thin Films ◽  
Deposition Conditions

ABSTRACTThe possibility of growing crystallographically aligned films of good quality on polycrystalline or amorphous substrates is of great interest, both for fundamental understanding of film growth mechanisms, and for potential applications such as buffer layers for silicon-on-insulator devices and an epitaxial transition layer for cuprate superconductor thin films grown on substrates with large misfits. Deposition conditions for yttria-stabilized zirconia (YSZ) thin films were investigated and optimized, and highly (001) oriented YSZ films were reproducibly prepared on amorphous substrates by MOCVD. We believe that the formation of a highly oriented crystalline film on an amorphous substrate can be interpreted in terms of the inherent features of MOCVD process, and a working model of this process is suggested.

Room-temperature preparation of biaxially textured indium tin oxide thin films with ion-beam-assisted deposition

2003 ◽  
Vol 18 (2) ◽  
pp. 442-447 ◽  
Author(s):  
Karola Thiele ◽  
Sibylle Sievers ◽  
Christian Jooss ◽  
Jörg Hoffmann ◽  
Herbert C. Freyhardt
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Room Temperature ◽  
Film Growth ◽  
Texture Evolution ◽  
Ion Beam ◽  
High Temperature Superconductors ◽  
Buffer Layers ◽  
Ito Thin Films

Biaxially aligned indium tin oxide (ITO) thin films were prepared by an ion-beamassisted deposition (IBAD) process at room temperature. Films with a transmittance at 550 nm of 90% and an electrical resistivity of 1.1 × 10−3 Ωcm for 300 and 250 nm thickness were obtained. Investigations of the texture evolution during IBAD film growth were carried out and compared to the well-established texture development in yttria-stabilized zirconia. An in-plane texture of 12.6° full width at half-maximum (FWHM) for a 1-μm-thick IBAD-ITO film was achieved. The quality of these films as electrically conductive buffer layers for YBa2Cu3O7-δ (YBCO) high-temperature superconductors was demonstrated by the subsequent deposition of high-currentcarrying YBCO films by thermal co-evaporation using a 3–5-nm-thick Y2O3 interlayer.A Jc of 0.76 MA/cm2 (77K, 0 T) was obtained for a 1 × 1 cm sample with ITO of 20° FWHM.

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

Inducing Grain Alignment in Metals, Compounds and Multicomponent Thin Films

2008 ◽  
Vol 1150 ◽  
Author(s):  
James M.E. Harper
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Ion Beam ◽  
Fiber Texture ◽  
Compound Formation ◽  
Grain Alignment ◽  
Ion Beam Assisted Deposition ◽  
Polycrystalline Thin Films ◽  
Grain Orientations ◽  
Specific Control

AbstractSeveral methods to induce grain alignment in polycrystalline thin films are discussed, in which directional effects can dominate over the normal evolution of fiber texture during thin film growth. Early experiments with ion beam assisted deposition showed the importance of channeling directions in selecting grain orientations with low sputtering yield or low ion damage energy density. Examples of this approach include the formation of biaxial fiber textures in Nb, Al and AlN. Grain orientations may also be selected by the release of stored energy during abnormal grain growth initiated by solute precipitation (Cu-Co) or phase transformation (TiSi2). Other energy sources such as mechanical deformation, crystallization or compound formation may also contribute to producing desired grain alignments. In multicomponent thin films, combinations of these mechanisms provide opportunities for more specific control of grain orientations.

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