scholarly journals Impact of NiOxBuffer Layers on the Dielectric Properties of BaTiO3Thin Films on Nickel Substrates Fabricated by Polymer Assisted Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-7 ◽  
Author(s):  
Hui Du ◽  
Yang Li ◽  
Wei Zheng Liang ◽  
Yu Xuan Wang ◽  
Min Gao ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Health Monitoring ◽  
Buffer Layers ◽  
Piezoelectric Thin Films ◽  
Potential Applications ◽  
General Test ◽  
Structural Metals ◽  
Nickel Substrates

Structural health monitoring with piezoelectric thin films integrated on structural metals shows great advantages for potential applications. However, the integration of piezoelectric thin films on structure metals is still challenged. In this paper, we report the piezoelectric barium titanate [BaTiO3(BTO)] thin films deposited on polycrystalline Ni substrates by the polymer assisted deposition (PAD) method using NiOxas the buffer layers. The NiOxbuffer layers with different thicknesses were prepared by varying immersing time from 5 minutes to 4 hours in H2O2solution. The dielectric and leakage current properties of the thin films have been studied by general test systems. The BTO/Ni heterostructure with 2-hour immersing time exhibits better dielectric properties with a dielectric constant over 1500 and a 34.8% decrease of the dielectric loss compared to that with 5-minute immersing time. The results show that the leakage current density is strongly affected by the thickness of the NiOxbuffer layer. The conduction mechanisms of the BTO/Ni heterostructure have been discussed according to theJ-Vcharacteristic curves.

High-κ Insulator Thin Films and Retention Properties of MFIS Diodes

2011 ◽  
Vol 1345 ◽  
Author(s):  
Yichun Zhou
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
High Speed ◽  
Random Access ◽  
Ferroelectric Thin Film ◽  
Buffer Layers ◽  
Interface Properties ◽  
Si Substrate ◽  
Device Structure ◽  
Low Leakage

ABSTRACTFerroelectric field effect transistor (FFET) is a promising candidate for non-volatile random access memory because of its high speed, single device structure, low power consumption, and nondestructive read-out operation. Currently, however, such ideal devices are commercially not available due to poor interface properties between ferroelectric film and Si substrate, such as leakage current and interdiffusion etc. So we choose YSZ and HfO2 insulating thin films as buffer layer due to they possess relatively high dielectric constant, high thermal stability, low leakage current, and good interface property with Si substrates. Two structural diodes of Pt/BNT/YSZ/Si and Pt/SBT/HfO2/Si were fabricated, and the microstructures, interface properties, C-V, I-V, and retention properties were investigated in detail. Experimental results show that the fabricated diodes exhibit excellent long-term retention properties, which is due to the good interface and the low leakage density, demonstrating that the YSZ and HfO2 buffer layers are playing a critical modulation role between the ferroelectric thin film and Si substrate.

Reduced leakage current, enhanced ferroelectric and dielectric properties of (La, Fe)-codoped Bi0.5Na0.5TiO3-based thin films

2015 ◽  
Vol 41 ◽  
pp. S344-S348 ◽  
Author(s):  
Peng Li ◽  
Wei Li ◽  
Shaohui Liu ◽  
Yang Zhang ◽  
Jiwei Zhai ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current

Reproducible growth of Highly Oriented (OO1) YSZ Films on Amorphous AiO2 Substrates by MOCVD

1995 ◽  
Vol 415 ◽  
Author(s):  
G. Doubinina ◽  
G. T. Stauf
Keyword(s):  
Thin Films ◽  
Film Growth ◽  
Silicon On Insulator ◽  
Buffer Layers ◽  
Amorphous Substrate ◽  
Fundamental Understanding ◽  
Amorphous Substrates ◽  
Potential Applications ◽  
Superconductor Thin Films ◽  
Deposition Conditions

ABSTRACTThe possibility of growing crystallographically aligned films of good quality on polycrystalline or amorphous substrates is of great interest, both for fundamental understanding of film growth mechanisms, and for potential applications such as buffer layers for silicon-on-insulator devices and an epitaxial transition layer for cuprate superconductor thin films grown on substrates with large misfits. Deposition conditions for yttria-stabilized zirconia (YSZ) thin films were investigated and optimized, and highly (001) oriented YSZ films were reproducibly prepared on amorphous substrates by MOCVD. We believe that the formation of a highly oriented crystalline film on an amorphous substrate can be interpreted in terms of the inherent features of MOCVD process, and a working model of this process is suggested.

Influence of Ta2O5, TiO2, and ZrO2 Interfacial Layers on Structural and Electrical Properties of Laser Ablated Ba0.5Sr0.5TiO3 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Suprem R. Das ◽  
Rasmi R. Das ◽  
P. Bhattacharya ◽  
Ram S. Katiyar
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Buffer Layers ◽  
Bst Thin Films ◽  
Interfacial Layers ◽  
Average Grain Size ◽  
Structural And Electrical Properties

ABSTRACTPulsed laser deposition technique was used to fabricate Ba0.5Sr0.5TiO 3 (BST) thin-films on Pt/TiO 2/SiO2/Si substrates. The influence of thin interfacial layers of Ta2O5, TiO2, and ZrO2, on the structural and electrical properties of BST thin films was investigated. Insertion of interfacial layers does not affect the perovskite phase formation of BST thin films. Buffer layers helped to make uniform distribution of grains and resulted in a relative increase in the average grain size. The dielectric tunability of BST thin films was reduced with the presence of buffer layers. A BST thin film having a dielectric permitivity of 470 reduced to 337, 235 and 233 in the presence of Ta2O5, TiO2, and ZrO2 layers, respectively. The reduction of the relative dielectric permittivity of BST films with the insertion of interfacial layers was explained in terms of a series capacitance effect, due to the low dielectric constant of interfacial layers. The TiO2 layer did not show any appreciable change in the leakage current density. Deposition of thin Ta2O5 and ZrO2 interfacial layer on top of Pt reduced the leakage current density by an order of magnitude.

Study on leakage current, ferroelectric and dielectric properties of BFMO thin films with different bismuth contents

2019 ◽  
Vol 30 (8) ◽  
pp. 7704-7710 ◽  
Author(s):  
L. X. Chen ◽  
C. Xu ◽  
X. L. Fan ◽  
X. H. Cao ◽  
K. Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current

Orientation Control and Dielectric Properties of Ba0.6Sr0.4TiO3 Thin Films on Pt/Ti/SiO2/Si Substrates with PbO Seeding Layer

2013 ◽  
Vol 741 ◽  
pp. 11-17
Author(s):  
Xiao Hua Sun ◽  
Ya Xia Qiao ◽  
Shuang Hou ◽  
Ying Yang ◽  
Cai Hua Huang
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Leakage Current ◽  
Leakage Current Density ◽  
Current Density ◽  
Precursor Solution ◽  
Seeding Layer ◽  
Bst Thin Films ◽  
Si Substrates ◽  
Bst Thin Film

Ba0.6Sr0.4TiO3 (BST) thin films were fabricated by solgel technique on Pt/Ti/SiO2/Si substrate without and with PbO seeding layer from precursor solutions with different concentrations. The crystal structure, surface morphology, dielectric properties and leakage current density of BST thin films are investigated as functions of the concentration of PbO precursor solution. Its found that the growth orientation of BST thin films with PbO seeding layer can be modulated through adjusting the concentration of PbO precursor solution. BST thin film with PbO seeding layer from 0.05 M precursor solution shows the highest dielectric constant and tunability, which may be attributed to the high crystallization and amplitude of the polarization in high (100) preferred orientated films. The leakage current density of BST films increases with the increasing concentration of PbO precursor solution and agrees well with the space-charge-limited current mechanism at room temperature.

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