The Use of Ion Channeling Axial Scans in the Study of Ion-Implanted Al2O3

1984 ◽  
Vol 41 ◽  
Author(s):  
G. C. Farlow ◽  
C. W. White ◽  
B. R. Appleton ◽  
P. S. Sklad ◽  
C. J. McHargue
Keyword(s):  
Rutherford Backscattering ◽  
Ion Channeling ◽  
Ion Implanted

AbstractRutherford backscattering and ion channeling-axial scans have been used to study lattice sites for several impurities implanted into A12O3. The case of Ga implanted in A12O3 is discussed and is shown to be substitutional on the Al sublattice. Additionally, the use of this technique in the study of precipitates in A12O3 is discussed with reference to Fe implanted A12O3 which was annealed in either oxygen or hydrogen.

A Study of the Ion Implanted Arsenic Tail in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
A. J. Filo ◽  
R. Irwin
Keyword(s):  
Deep Level ◽  
Total Concentration ◽  
Rutherford Backscattering ◽  
Concentration Profiles ◽  
Tail Region ◽  
Spreading Resistance ◽  
Ion Channeling ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTSpreading resistance measurements, Rutherford backscattering spectroscopy, ion channeling, and deep level capacitance transient spectroscopy are used to study ion implanted arsenic in silicon and its tail region. The following comparisons of the furnace annealed samples are made: Electrically active profiles versus total concentration profiles, tail diffusion versus total implant diffusion, and substitutional fractions. These results are compared to currently accepted models for arsenic diffusion in silicon.

Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate

1992 ◽  
Vol 71 (6) ◽  
pp. 2591-2595 ◽  
Author(s):  
U. V. Desnica ◽  
J. Wagner ◽  
T. E. Haynes ◽  
O. W. Holland
Keyword(s):  
Dose Rate ◽  
Ion Channeling ◽  
Ion Implanted

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

scholarly journals Photoluminescence Spectroscopy and Rutherford Backscattering Channeling Evaluation of Various Capping Techniques for Rapid Thermal Annealing of Ion-Implanted ZnSe

1994 ◽  
Vol 340 ◽  
Author(s):  
E.L. Allen ◽  
F.X. Zach ◽  
K.M. Yu ◽  
E.D. Bourret
Keyword(s):  
Optical Properties ◽  
Point Defects ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Liquid Nitrogen Temperature ◽  
Rutherford Backscattering ◽  
Photoluminescence Spectroscopy ◽  
Photoluminescence Spectra ◽  
Ion Implanted

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

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