A Study of the Ion Implanted Arsenic Tail in Silicon

1987 ◽  
Vol 104 ◽  
Author(s):  
S. E. Beck ◽  
R. J. Jaccodine ◽  
A. J. Filo ◽  
R. Irwin
Keyword(s):  
Deep Level ◽  
Total Concentration ◽  
Rutherford Backscattering ◽  
Concentration Profiles ◽  
Tail Region ◽  
Spreading Resistance ◽  
Ion Channeling ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Ion Implanted

ABSTRACTSpreading resistance measurements, Rutherford backscattering spectroscopy, ion channeling, and deep level capacitance transient spectroscopy are used to study ion implanted arsenic in silicon and its tail region. The following comparisons of the furnace annealed samples are made: Electrically active profiles versus total concentration profiles, tail diffusion versus total implant diffusion, and substitutional fractions. These results are compared to currently accepted models for arsenic diffusion in silicon.

Improvement of Local Deep Level Transient Spectroscopy for Microscopic Evaluation of SiO2/4H-SiC Interfaces

2018 ◽  
Vol 924 ◽  
pp. 289-292
Author(s):  
Yuji Yamagishi ◽  
Yasuo Cho
Keyword(s):  
Deep Level ◽  
Interface State ◽  
State Density ◽  
Trap States ◽  
Accurate Analysis ◽  
Microscopic Evaluation ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Full Waveforms ◽  
Dimensional Mapping

We demonstrate our new local deep level spectroscopy system improved for more accurate analysis of trap states at SiO2/4H-SiC interfaces. Full waveforms of the local capacitance transient with the amplitude of attofarads and the time scale of microseconds were obtained and quantitatively analyzed. The local energy distribution of interface state density in the energy range of EC − Eit = 0.31–0.38 eV was obtained. Two-dimensional mapping of the interface states showed inhomogeneous contrasts with the lateral spatial scale of several hundreds of nanometers, suggesting that the physical origin of the trap states at SiO2/SiC interfaces is likely to be microscopically clustered.

The Use of Ion Channeling Axial Scans in the Study of Ion-Implanted Al2O3

1984 ◽  
Vol 41 ◽  
Author(s):  
G. C. Farlow ◽  
C. W. White ◽  
B. R. Appleton ◽  
P. S. Sklad ◽  
C. J. McHargue
Keyword(s):  
Rutherford Backscattering ◽  
Ion Channeling ◽  
Ion Implanted

AbstractRutherford backscattering and ion channeling-axial scans have been used to study lattice sites for several impurities implanted into A12O3. The case of Ga implanted in A12O3 is discussed and is shown to be substitutional on the Al sublattice. Additionally, the use of this technique in the study of precipitates in A12O3 is discussed with reference to Fe implanted A12O3 which was annealed in either oxygen or hydrogen.

Study of the deep level related to a platinum–dihydrogen complex in Si by capacitance transient spectroscopy under uniaxial stress

2003 ◽  
Vol 66 (1-4) ◽  
pp. 352-357 ◽  
Author(s):  
Y. Kamiura ◽  
Y. Iwagami ◽  
K. Fukuda ◽  
Y. Yamashita ◽  
T. Ishiyama ◽  
...  
Keyword(s):  
Deep Level ◽  
Uniaxial Stress ◽  
Transient Spectroscopy ◽  
Capacitance Transient

Shallow and Deep Level Defects in GaN

1995 ◽  
Vol 395 ◽  
Author(s):  
W. Götz ◽  
N.M. Johnson ◽  
D.P. Bour ◽  
C. Chen ◽  
H. Liu ◽  
...  
Keyword(s):  
Deep Level ◽  
Variable Temperature ◽  
Shallow Donor ◽  
Deep Levels ◽  
Electron Photoemission ◽  
Hall Effect Measurements ◽  
Transient Spectroscopy ◽  
P Type ◽  
Capacitance Transient ◽  
Threshold Energies

ABSTRACTShallow and deep electronic defects in MOCVD-grown GaN were characterized by variable temperature Hall effect measurements, deep level transient spectroscopy (DLTS) and photoemission capacitance transient spectroscopy (O-DLTS). Unintentionally and Si-doped, n-type and Mg-doped, p-type GaN films were studied. Si introduces a shallow donor level into the band gap of GaN at ∼Ec - 0.02 eV and was found to be the dominant donor impurity in our unintentionally doped material. Mg is the shallowest acceptor in GaN identified to date with an electronic level at ∼Ev + 0.2 eV. With DLTS deep levels were detected in n-type and p-type GaN and with O-DLTS we demonstrate several deep levels with optical threshold energies for electron photoemission in the range between 0.87 and 1.59 eV in n-type GaN.

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