Raman and ion channeling analysis of damage in ion‐implanted GaAs: Dependence on ion dose and dose rate

1992 ◽  
Vol 71 (6) ◽  
pp. 2591-2595 ◽  
Author(s):  
U. V. Desnica ◽  
J. Wagner ◽  
T. E. Haynes ◽  
O. W. Holland
Keyword(s):  
Dose Rate ◽  
Ion Channeling ◽  
Ion Implanted

Defect Tails in GE Implanted Si Probed by Slow Positrons and Ion Channeling

1998 ◽  
Vol 532 ◽  
Author(s):  
A P Knights ◽  
A Nejim ◽  
N P Barradas ◽  
R Gwilliam ◽  
P G Coleman ◽  
...  
Keyword(s):  
Dose Rate ◽  
Depth Distribution ◽  
Incident Angle ◽  
Dose Range ◽  
Positron Annihilation Spectroscopy ◽  
Average Dose ◽  
Ion Channeling ◽  
Open Volume ◽  
Volume Defect ◽  
Block Distribution

ABSTRACTPositron annihilation spectroscopy has been used to profile the distribution of defects following implantation of 120keV Ge+ into (100) Si in the dose range l x 1010 - lx104 cm−2 . The openvolume defect profiles can be adequately fitted assuming a simple rectangular block distribution extending to 350nm. Using anodic oxidation and etching, a procedure is described which allows details of the defect tails beyond the range of the implanted ion, usually inaccessible to positron -2 annihilation measurements, to be determined. For a time averaged dose-rate (Jr) of 0.02μA cm−2 and incident angle of 7°, open-volume defects are found to exist at concentrations exceeding 1016cm−3 at depths upto 600nm whereas the peak of the depth distribution of the implanted ions (Rp) is 76nm, measured using SIMS. When the time-average dose-rate is increased by a factor of 10, defects persist at concentrations in excess of 1017cm−3 beyond lμm and the Rp increases to 101nm. The open-volume defect profiles are compared to those deduced from Rutherford backscattering-channeling using the fitting routine DICADA.

scholarly journals Lattice Damage in Ion-Implanted Compound Semiconductors and Its Effect on Electrical Activation

1993 ◽  
Vol 300 ◽  
Author(s):  
T. E. Haynes ◽  
R. Morton ◽  
S. S. Lau
Keyword(s):  
Point Defect ◽  
Compound Semiconductors ◽  
Electrical Activation ◽  
Electrical Performance ◽  
Ion Channeling ◽  
Independent Observations ◽  
Lattice Damage ◽  
Defect Interactions ◽  
Ion Species ◽  
Ion Implanted

ABSTRACTIn recent years, a number of experimental observations have indicated that interactions between mobile point defects generated during ion implantation play an important role in the damage production in Ill-V compound semiconductors, and particularly GaAs. This paper reviews a set of such observations based on ion channeling measurements of the lattice damage in GaAs implanted with Si ions. Selected independent observations are also surveyed to illustrate the importance of point-defect interactions. Taken together, these show that at least two contributions to the lattice damage must often be considered: a “prompt” contribution attributed to direct-impact amorphization, and a “delayed” contribution attributed to point-defect clustering. New measurements are then described which show the different effects that these two damage components have on the electrical activation in annealed, Siimplanted GaAs. The aim is to indicate the potential to exploit the balance between these two damage contributions in order to improve the electrical performance and reproducibility of ion-implanted and annealed layers. Finally, the applicability of these concepts to other ion species and other compound semiconductors (GaP and InP) is briefly discussed.

The Use of Ion Channeling Axial Scans in the Study of Ion-Implanted Al2O3

1984 ◽  
Vol 41 ◽  
Author(s):  
G. C. Farlow ◽  
C. W. White ◽  
B. R. Appleton ◽  
P. S. Sklad ◽  
C. J. McHargue
Keyword(s):  
Rutherford Backscattering ◽  
Ion Channeling ◽  
Ion Implanted

AbstractRutherford backscattering and ion channeling-axial scans have been used to study lattice sites for several impurities implanted into A12O3. The case of Ga implanted in A12O3 is discussed and is shown to be substitutional on the Al sublattice. Additionally, the use of this technique in the study of precipitates in A12O3 is discussed with reference to Fe implanted A12O3 which was annealed in either oxygen or hydrogen.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

The effect of dose rate on ion implanted impurity profiles in silicon

1996 ◽  
Vol 112 (1-4) ◽  
pp. 144-147 ◽  
Author(s):  
S. Tian ◽  
S.-H. Yang ◽  
S. Morris ◽  
K. Parab ◽  
A.F. Tasch ◽  
...  
Keyword(s):  
Dose Rate ◽  
Impurity Profiles ◽  
Ion Implanted

Defect structure of oxygen-vacancy clusters in O18 and self ion implanted Fe(100) crystal by ion channeling and ab-initio study

2018 ◽  
Vol 143 ◽  
pp. 198-204 ◽  
Author(s):  
Vairavel Mathayan ◽  
Saravanan Kothalamuthu ◽  
Jaiganesh Gnanasekaran ◽  
Lakshmanan Chelladurai ◽  
Rajaraman Ramalingam ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Ab Initio ◽  
Defect Structure ◽  
Ab Initio Study ◽  
Vacancy Clusters ◽  
Ion Channeling ◽  
Ion Implanted

The Behavior of Ion-Implanted Hydrogen in Gallium Nitride

1998 ◽  
Vol 537 ◽  
Author(s):  
S. M. Myers ◽  
T.J. Headley ◽  
C.R. Hills ◽  
J. Han ◽  
G.A. Petersen ◽  
...  
Keyword(s):  
Bound States ◽  
Bubble Formation ◽  
Extended Defects ◽  
Wurtzite Phase ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Microstructural Effects ◽  
Formation And Evolution ◽  
Ion Implanted

AbstractHydrogen was ion-implanted into wurtzite-phase GaN, and its transport, bound states, and microstructural effects during annealing up to 980°C were investigated by nuclear-reaction profiling, ion-channeling analysis, transmission electron microscopy, and infrared (IR) vibrational spectroscopy. At implanted concentrations vl at.%, faceted H 2 bubbles formed, enabling identification of energetically preferred surfaces, examination of passivating N-H states on these surfaces, and determination of the diffusivity-solubility product of the H. Additionally, the formation and evolution of point and extended defects arising from implantation and bubble formation were characterized. At implanted H concentrations ^0.1 at.%, bubble formation was not observed, and ion-channeling analysis indicated a defect-related H site located within the [0001] channel.

The effect of dose rate on ion implanted impurity profiles in silicon

1996 ◽  
pp. 144-147
Author(s):  
S. Tian ◽  
S.-H. Yang ◽  
S. Morris ◽  
K. Parab ◽  
A.F. Tasch ◽  
...  
Keyword(s):  
Dose Rate ◽  
Impurity Profiles ◽  
Ion Implanted
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