Ion-beam synthesis and structural characterization of ZnS nanocrystals in SiO2

1998 ◽  
Vol 72 (26) ◽  
pp. 3488-3490 ◽  
Author(s):  
C. Bonafos ◽  
B. Garrido ◽  
M. López ◽  
A. Romano-Rodriguez ◽  
O. González-Varona ◽  
...  
1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche

AbstractThe results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.


2005 ◽  
Vol 98 (2) ◽  
pp. 024307 ◽  
Author(s):  
B. Johannessen ◽  
P. Kluth ◽  
C. J. Glover ◽  
G. de M. Azevedo ◽  
D. J. Llewellyn ◽  
...  

1996 ◽  
Vol 272 (1) ◽  
pp. 99-106 ◽  
Author(s):  
D. Leinen ◽  
A. Caballero ◽  
A. Fernández ◽  
J.P. Espinós ◽  
A. Justo ◽  
...  

Author(s):  
S. Intarasiri ◽  
A. Hallén ◽  
T. Kamwanna ◽  
L.D. Yu ◽  
G. Possnert ◽  
...  

Materia Japan ◽  
2009 ◽  
Vol 48 (12) ◽  
pp. 619-619
Author(s):  
Yasuhiro Sakamoto ◽  
Sam M. Stevens ◽  
Changhong Xiao ◽  
Osamu Terasaki ◽  
Shunsuke Asahina

1997 ◽  
Vol 33 (3) ◽  
pp. 2369-2374 ◽  
Author(s):  
S.X. Wang ◽  
W.E. Bailey ◽  
C. Surgers

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