Structural characterization of Cu nanocrystals formed in SiO2 by high-energy ion-beam synthesis

2005 ◽  
Vol 98 (2) ◽  
pp. 024307 ◽  
Author(s):  
B. Johannessen ◽  
P. Kluth ◽  
C. J. Glover ◽  
G. de M. Azevedo ◽  
D. J. Llewellyn ◽  
...  
1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
M. F. Wu ◽  
A. Vantomme ◽  
H. Pattyn ◽  
G. Langouche

AbstractThe results are discussed of the characterization by means of TEM, RBS and XRD of ErSi2-x layers prepared by ion beam synthesis on (111) silicon. It will be shown that high quality (buried) layers can be prepared by channelled implantation of the erbium, whereas unchannelled implantation leads to discontinuous polycrystalline surface layers. The epitaxial growth and vacancy ordering in the silicide are discussed.


1998 ◽  
Vol 72 (26) ◽  
pp. 3488-3490 ◽  
Author(s):  
C. Bonafos ◽  
B. Garrido ◽  
M. López ◽  
A. Romano-Rodriguez ◽  
O. González-Varona ◽  
...  

1996 ◽  
Vol 272 (1) ◽  
pp. 99-106 ◽  
Author(s):  
D. Leinen ◽  
A. Caballero ◽  
A. Fernández ◽  
J.P. Espinós ◽  
A. Justo ◽  
...  

2009 ◽  
Vol 285 (1-2) ◽  
pp. 70-77 ◽  
Author(s):  
Christopher J. Taylor ◽  
Ruth M. Burke ◽  
Bohan Wu ◽  
Subhasis Panja ◽  
Steen Brøndsted Nielsen ◽  
...  

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