Characterization of Ultra-Thin PtSi Films for Infrared Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
P. Roussel ◽  
S. Kolodinski ◽  
A. Torres ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Annealing Process ◽  
Deposition Techniques

AbstractTransmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

scholarly journals Synthesis and Characterization of Nitrogen-doped Carbon Nanotubes Derived from g-C3N4

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1349 ◽  
Author(s):  
Klaudia Maślana ◽  
Ryszard J. Kaleńczuk ◽  
Beata Zielińska ◽  
Ewa Mijowska
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Nitrogen Doped ◽  
Atomic Force ◽  
Transmission Electron ◽  
Nitrogen Doped Carbon

Here, nitrogen-doped carbon nanotubes (CNT-N) were synthesized using exfoliated graphitic carbon nitride functionalized with nickel oxides (ex-g-C3N4-NixOy). CNT-N were produced at 900 °C in two steps: (1) ex-g-C3N4-NixOy reduction with hydrogen and (2) ethylene assisted chemical vapor deposition (CVD). The detailed characterization of the produced materials was performed via atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD) and thermogravimetric analysis (TGA). The possible mechanism of nanotubes formation is also proposed.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

(G03 Best Paper Award Winner) Analysis of Sn Behavior During Ni/GeSn Solid-State Reaction by Correlated X-ray Diffraction, Atomic Force Microscopy, and Ex-situ/In-situ Transmission Electron Microscopy

2020 ◽  
Vol MA2020-02 (24) ◽  
pp. 1750-1750
Author(s):  
Andrea Quintero Colmenares ◽  
Patrice Gergaud ◽  
Jean-Michel Hartmann ◽  
Vincent Delaye ◽  
Nicolas Bernier ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ex Situ ◽  
Paper Award ◽  
X Ray Diffraction ◽  
Award Winner ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Evaluation of the Strain Field Inside and Around Growth Islands by Means of X-Ray Diffuse Scattering

1999 ◽  
Vol 583 ◽  
Author(s):  
Martin Schmidbauer ◽  
Thomas Wiebach ◽  
Helmut Raidt ◽  
Peter Schäfer ◽  
Michael hanke ◽  
...  
Keyword(s):  
Strain Field ◽  
Reciprocal Space ◽  
X Ray Diffraction ◽  
Abrupt Increase ◽  
X Ray ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Transmission Electron ◽  
Highly Strained

AbstractThe strain distribution inside and in the vicinity of coherently strained self-organized islands has been investigated by high-resolution x-ray diffraction (HRXRD). Finite element method (FEM) calculations were carried out in order to calculate the strain field, which was then used to simulate x-ray reciprocal space maps on the basis of kinematical scattering theory. For Si0 75Ge0.25 islands an abrupt increase in the Ge-concentration at about one third of the island height has been found. This behavior can be attributed to different nucleation stages during growth. Highly strained buried CdSe quantum dots (QDs) strongly influence the surrounding ZnSe matrix. From reciprocal space maps and FEM simulations we were able to estimate the shape and size of the islands. The results are in agreement with transmission electron microscopy (TEM) and UHV atomic force microscopy (AFM) data.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

scholarly journals Effects of Size and Dispersity of Microcrystalline Celluloses on Size, Structure and Stability of Nanocrystalline Celluloses Extracted by Acid Hydrolysis

Nano LIFE ◽  
2014 ◽  
Vol 04 (04) ◽  
pp. 1441014 ◽  
Author(s):  
Qi Liu ◽  
Weiping Hao ◽  
Yongguang Yang ◽  
Aurore Richel ◽  
Canbin Ouyang ◽  
...  
Keyword(s):  
Particle Size ◽  
Acid Hydrolysis ◽  
Size Structure ◽  
Particle Sizes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Sonication Treatment

Nanocrystalline celluloses (NCCs) were separated from four commercial microcrystalline celluloses (MCCs) by an acid hydrolysis–sonication treatment. Transmission electron microscopy (TEM), atomic force microscopy (AFM), Fourier transform infrared (FTIR) spectrum, X-ray diffraction (XRD) and thermogravimetric analysis (TGA) were conducted to investigate the NCCs. MCCs with different morphologies and particle sizes showed different aggregation degrees. The aggregation of MCCs followed the order MCC1 > MCC3 > MCC2 > MCC4, which is the same order of the heights of the resulting NCCs. The best uniformity and thermal stability were characterized for NCC3, which was produced by MCC3 with smallest original particle size and good dispersity among the four MCCs. This result suggests that both the original particle size and dispersity of MCCs had significant effects on separated NCCs.

Characterization of kaolinite in the hardsetting clay fraction using atomic force microscopy, X-ray diffraction, and the Rietveld method

2017 ◽  
Vol 17 (8) ◽  
pp. 2144-2155 ◽  
Author(s):  
Luis Valério Prandel ◽  
Nívea Maria Piccolomini Dias ◽  
Sérgio da Costa Saab ◽  
André Maurício Brinatti ◽  
Neyde Fabíola Balarezo Giarola ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Rietveld Method ◽  
Clay Fraction ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force
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