scholarly journals Synthesis and Characterization of Nitrogen-doped Carbon Nanotubes Derived from g-C3N4

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1349 ◽  
Author(s):  
Klaudia Maślana ◽  
Ryszard J. Kaleńczuk ◽  
Beata Zielińska ◽  
Ewa Mijowska
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Nitrogen Doped ◽  
Atomic Force ◽  
Transmission Electron ◽  
Nitrogen Doped Carbon

Here, nitrogen-doped carbon nanotubes (CNT-N) were synthesized using exfoliated graphitic carbon nitride functionalized with nickel oxides (ex-g-C3N4-NixOy). CNT-N were produced at 900 °C in two steps: (1) ex-g-C3N4-NixOy reduction with hydrogen and (2) ethylene assisted chemical vapor deposition (CVD). The detailed characterization of the produced materials was performed via atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD) and thermogravimetric analysis (TGA). The possible mechanism of nanotubes formation is also proposed.

Influence of Ammonia on the Fabrication of Aligned Carbon Nanotubes Using Thermal CVD

2011 ◽  
Vol 467-469 ◽  
pp. 312-315
Author(s):  
Gang Li ◽  
Wen Ming Cheng
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Vertical Alignment ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Aligned Carbon Nanotubes ◽  
20 Nm

Ultra-thin (20 nm) nickel catalyst films were deposited by sputtering on SiO2/Si substrates. At the pretreatments, ammonia (NH3) was conducted for different time in a thermal chemical vapor deposition (CVD) system. Pretreated samples were characterized using atomic force microscopy (AFM). After the pretreatment, acetylene was introduced into the chamber for 10 min, samples were characterized using scanning electron micrograph (SEM) and X-ray diffraction (XRD). It was concluded that NH3 pretreatment was very crucial to control the surface morphology of catalytic metals and thus to achieve the vertical alignment of carbon nanotubes (CNTs). With higher density of the Ni particles, better alignment of the CNTs can be obtained due to steric hindrance effect between neighboring CNTs.

Characterization of Ultra-Thin PtSi Films for Infrared Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
P. Roussel ◽  
S. Kolodinski ◽  
A. Torres ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Annealing Process ◽  
Deposition Techniques

AbstractTransmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

A Comparative Study of the Synthesis of Carbon Nanotubes Using Ni and Fe as Catalyst

2009 ◽  
Vol 67 ◽  
pp. 89-94 ◽  
Author(s):  
Joydip Sengupta ◽  
Sovan Kumar Panda ◽  
Chacko Jacob
Keyword(s):  
Electron Microscopy ◽  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Raman Spectroscopic ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Synthesis Of Carbon Nanotubes

The effect of Fe and Ni catalysts on the synthesis of carbon nanotubes (CNTs) using atmospheric pressure chemical vapor deposition (APCVD) was investigated. Distribution of the catalyst particles over the Si substrate was analyzed by atomic force microscopy (AFM). Characterization by X-ray diffraction analysis (XRD), field emission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM) and Raman spectroscopic measurements over the grown species is reported. The study clearly shows that the catalyst strongly influences morphology and microstructure of the grown CNTs.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

AlxGa1-xN-Based Materials and Heterostructures

1996 ◽  
Vol 449 ◽  
Author(s):  
P. Kung ◽  
A. Saxler ◽  
D. Walker ◽  
X. Zhang ◽  
R. Lavado ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Bragg Reflectors ◽  
X Ray Diffraction ◽  
Chemical Vapor Deposition Growth ◽  
X Ray ◽  
Sapphire Substrates ◽  
Transmission Electron ◽  
Dimensional Electron Gas ◽  
P Type

ABSTRACTWe present the metalorganic chemical vapor deposition growth, n-type and p-type doping and characterization of AlxGa1-xN alloys on sapphire substrates. We report the fabrication of Bragg reflectors and the demonstration of two dimensional electron gas structures using AlxGa1-xN high quality films. We report the structural characterization of the AlxGa1-xN / GaN multilayer structures and superlattices through X-ray diffraction and transmission electron microscopy. A density of screw and mixed threading dislocations as low as 107 cm-2 was estimated in AlxGa1-xN / GaN structures. The realization of AlxGa1-xN based UV photodetectors with tailored cut-off wavelengths from 365 to 200 nm are presented.

Growth and Characterization of bulk GaN by Ga Vapor Transport

2004 ◽  
Vol 831 ◽  
Author(s):  
Phanikumar Konkapaka ◽  
Huaqiang Wu ◽  
Yuri Makarov ◽  
Michael G. Spencer
Keyword(s):  
Growth Rates ◽  
Vapor Transport ◽  
Spiral Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Bulk Gan ◽  
Diffraction Patterns

ABSTRACTBulk GaN crystals of dimensions 8.5 mm × 8.5 mm were grown at growth rates greater than 200μm/hr using Gallium Vapor Transport technique. GaN powder and Ammonia were used as the precursors for growing bulk GaN. Nitrogen is used as the carrier gas to transport the Ga vapor that was obtained from the decomposition of GaN powder. During the process, the source GaN powder was kept at 1155°C and the seed at 1180°C. Using this process, it was possible to achieve growth rates of above 200 microns/hr. The GaN layers thus obtained were characterized using X-Ray diffraction [XRD], scanning electron microscopy [SEM], and atomic force microscopy [AFM]. X-ray diffraction patterns showed that the grown GaN layers are single crystals oriented along c direction. AFM studies indicated that the dominant growth mode was dislocation mediated spiral growth. Electrical and Optical characterization were also performed on these samples. Hall mobility measurements indicated a mobility of 550 cm2/V.s and a carrier concentration of 6.67 × 1018/cm3

scholarly journals Observation and Characterization of Fragile Organometallic Molecules Encapsulated in Single-Wall Carbon Nanotubes

2014 ◽  
Vol 2014 ◽  
pp. 1-5
Author(s):  
Daisuke Ogawa ◽  
Ryo Kitaura ◽  
Takeshi Saito ◽  
Shinobu Aoyagi ◽  
Eiji Nishibori ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
High Yield ◽  
Single Wall Carbon Nanotubes ◽  
X Ray Diffraction ◽  
Single Wall Carbon ◽  
X Ray ◽  
Transmission Electron ◽  
Organometallic Molecules ◽  
X Ray Absorption

Thermally fragile tris(η5-cyclopentadienyl)erbium (ErCp3) molecules are encapsulated in single-wall carbon nanotubes (SWCNTs) with high yield. We realized the encapsulation of ErCp3with high filling ratio by using high quality SWCNTs at an optimized temperature under higher vacuum. Structure determination based on high-resolution transmission electron microscope observations together with the image simulations reveals the presence of almost free rotation of each ErCp3molecule in SWCNTs. The encapsulation is also confirmed by X-ray diffraction. Trivalent character of Er ions (i.e., Er3+) is confirmed by X-ray absorption spectrum.

Epitaxial BaTiO3 Thin Films on Different Substrates for Optical Waveguide Applications

1999 ◽  
Vol 597 ◽  
Author(s):  
M. Siegert ◽  
Judit G. Lisoni ◽  
C. H. Lei ◽  
A. Eckau ◽  
W. Zander ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Waveguides ◽  
Rutherford Backscattering Spectrometry ◽  
Optical Data ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Ion Channeling ◽  
Atomic Force ◽  
Transmission Electron

AbstractIn the process of developing thin film electro-optical waveguides we investigated the influence of different substrates on the optical and structural properties of epitaxial BaTiO3 thin films. These films are grown by on-axis pulsed laser deposition (PLD) on MgO(100), MgAl2O4(100), SrTiO3(100) and MgO buffered A12O3(1102) substrates. The waveguide losses and the refractive indices were measured with a prism coupling setup. The optical data are correlated to the results of Rutherford backscattering spectrometry/ion channeling (RBS/C). X-ray diffraction (XRD), atomic force microscopy (AFM) and transmission electron microscopy (TEM). BaTiO3 films on MgO(100) substrates show planar waveguide losses of 3 dB/cm and ridge waveguide losses of 5 dB/cm at a wavelength of 633 nm.

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