scholarly journals Optical Properties of Epitaxial Plt Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
Y. Kim ◽  
A. Erbil ◽  
L. A. Boatner ◽  
L. Steingart ◽  
T. Mensah ◽  
...  
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Refractive Indices ◽  
Dispersion Formula ◽  
Epitaxial Heterostructures ◽  
Good Agreement

AbstractMetalorganic chemical vapor deposition (MOCVD) was used to prepare epitaxial or highly oriented PLT (Pb1-xLaxTiO3) thin films with x in the range of 0.21 to 0.34. The growth of PLT films resulted in three-dimensional epitaxial heterostructures on (100) surface of the MgO and the KTaO3 substrates. The PLT film grown on the KTaO3 (100) substrate has a significantly lower minimum channeling yield compared to that on the MgO (100) substrate because of the smaller lattice mismatch. The thickness and the refractive indices in the wavelength range of 435 to 1,523 nm were measured by the prism coupling method. The measured film thickness of 570 nm was in good agreement with that from RBS measurements. The refractive index of PLT film is smaller than that of PbTiO3, its difference at 632.8 nm is about 2.5 %. The dispersion of the refractive index was well fitted to a Sellmeier dispersion formula.

Growth and Properties of PbTiO3/PLT Heterostructures

1994 ◽  
Vol 361 ◽  
Author(s):  
Yeongkwan Kim ◽  
Y.H. Han ◽  
A. Erbil ◽  
L.A. Boatner
Keyword(s):  
Thin Films ◽  
Metalorganic Chemical Vapor Deposition ◽  
Three Dimensional ◽  
Chemical Vapor ◽  
Crystalline Perfection ◽  
Pole Figures ◽  
Substrate Dependence ◽  
Superlattice Structures ◽  
Very High ◽  
Orientational Relationship

ABSTRACTFerroelectric superlattice structures composed of three-dimensionally epitaxial PbTiO3 and PLT thin films have been successfully grown on SrTiO3 substrates by metalorganic chemical vapor deposition. The modulation structures were confirmed by θ-2θ XRD, and the excellent in-plane orientational relationship between the superlattice film and the substrate by (100), (110), and (111)-pole figures. The φ-scans through the (110) and (111) reflections were used as additional evidence for three-dimensional epitaxy. The substrate dependence of the epitaxial orientation of PLT and PbTiO3 single-layered thin films was investigated. PbTiO3 thin films with very high crystalline perfection can be successfully grown on KTaO3 substrates.

Surface and Interface Properties of InSb Epitaxial Thin Films Grown on Gaas by Low Pressure Metalorganic Chemical Vapor Deposition

1997 ◽  
Vol 484 ◽  
Author(s):  
K. Li ◽  
K. L. Tan ◽  
M. Pelczynski ◽  
Z. C. Fenge ◽  
A. T. S. Wee ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Interface Properties ◽  
Surface And Interface ◽  
Metalorganic Chemical

AbstractThere is increasing interest in the epitaxial growth of high quality InSb thin films on GaAs substrates for many device applications such as infrared optoelectronics. The large lattice mismatch (14.6%) between InSb and GaAs has meant that both growth techniques and conditions have a large influence on the interface properties and consequently the film quality. A surface science study, by X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) together with Nomarski microscopy, on the surface and interface properties of InSb/GaAs by metalorganic chemical vapor deposition is presented. It is found fromthe XPS data that the ambient surface is composed of InSb, In2O3, Sb2O3 and Sb2O5. The interdiffusion phenomena are studied by AES depth profiling; the width of interdiffusion region is determined to be 50±10 nm for all the samples grown at different V/III ratios. This is narrower than the data previously obtained for InSb/GaAs interfaces produced by metalorganic magnetron sputtering. The results also demonstrate that uniform and stoichiometric InSb films have been obtained, and that the reproducibility of the MOCVD technique is excellent.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Mechanistic study of metalorganic chemical vapor deposition of (Ba,Sr)TiO3 thin films

2000 ◽  
Vol 87 (10) ◽  
pp. 7430-7437 ◽  
Author(s):  
Y. Gao ◽  
C. L. Perkins ◽  
S. He ◽  
P. Alluri ◽  
T. Tran ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Mechanistic Study ◽  
Metalorganic Chemical
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