Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light

1981 ◽  
Vol 4 ◽  
Author(s):  
J. L. Benton ◽  
G. K. Celler ◽  
D. C. Jacobson ◽  
L. C. Kimerling ◽  
D. J. Lischner ◽  
...  
Keyword(s):  
High Efficiency ◽  
Low Cost ◽  
Complete Recovery ◽  
Depletion Region ◽  
Device Fabrication ◽  
Incoherent Light ◽  
Carrier Lifetimes ◽  
Transient Spectroscopy ◽  
Capacitance Transient

ABSTRACTIrradiation of Si wafers for 5 to 10 sec with high intensity tungsten halogen lamps produces complete recovery of the displacement damage resulting from ion implantation. Data for two different thermal cycles are presented, with As and B implant doses ranging from 1013 to 1016 ions cm−2. Sheet resistance measurements combined with Rutherford backscattering indicate full electrical activation of dopants with very little diffusion. Carrier lifetimes measured by a photoconductive method and by diode reverse recovery compare favorably with furnace annealing data, and capacitance transient spectroscopy reveals a low density of defects in the junction depletion region. These results combined with the inherent advantages of low cost and high efficiency make Rapid Thermal Annealing ideally suited for VLSI device fabrication.

Characterization of Si/Si1−xGex/Si heterostructures by capacitance‐transient spectroscopy

1994 ◽  
Vol 76 (7) ◽  
pp. 4237-4243 ◽  
Author(s):  
J. C. Brighten ◽  
I. D. Hawkins ◽  
A. R. Peaker ◽  
R. A. Kubiak ◽  
E. H. C. Parker ◽  
...  
Keyword(s):  
Transient Spectroscopy ◽  
Capacitance Transient

scholarly journals Application of Polysaccharide Biopolymer in Petroleum Recovery

Polymers ◽  
2020 ◽  
Vol 12 (9) ◽  
pp. 1860
Author(s):  
Shunxiang Xia ◽  
Laibao Zhang ◽  
Artur Davletshin ◽  
Zhuoran Li ◽  
Jiahui You ◽  
...  
Keyword(s):  
Renewable Resources ◽  
High Efficiency ◽  
Low Cost ◽  
Local Environment ◽  
Recovery Process ◽  
Process Research ◽  
Synthesis And Characterization ◽  
Well Drilling ◽  
Fluid Properties

Polysaccharide biopolymers are biomacromolecules derived from renewable resources with versatile functions including thickening, crosslinking, adsorption, etc. Possessing high efficiency and low cost, they have brought wide applications in all phases of petroleum recovery, from well drilling to wastewater treatment. The biopolymers are generally utilized as additives of fluids or plugging agents, to correct the fluid properties that affect the performance and cost of petroleum recovery. This review focuses on both the characteristics of biopolymers and their utilization in the petroleum recovery process. Research on the synthesis and characterization of polymers, as well as controlling their structures through modification, aims to develop novel recipes of biopolymer treatment with new application realms. The influences of biopolymer in many petroleum recovery cases were also evaluated to permit establishing the correlations between their physicochemical properties and performances. As their performance is heavily affected by the local environment, screening and testing polymers under controlled conditions is the necessary step to guarantee the efficiency and safety of biopolymer treatments.

Transient Capacitance Characterization of Deep Levels in Undoped and Si-Doped GaN

2003 ◽  
Vol 764 ◽  
Author(s):  
S. Nakamura ◽  
P. Liu ◽  
M. Suhara ◽  
T. Okumura
Keyword(s):  
Chemical Vapor ◽  
Deep Levels ◽  
Yellow Luminescence ◽  
Capacitance Measurements ◽  
Transient Capacitance ◽  
Si Doped ◽  
Transient Spectroscopy ◽  
Capacitance Transient ◽  
Isothermal Capacitance Transient Spectroscopy

AbstractThe deep levels in both undoped and Si-doped GaN layer grown by metalorganic chemical vapor deposition have been characterized by photocapacitance and transient capacitance spectroscopy. The increase in the photocapacitance was observed in both GaN samples in the range of 1.8 to 2.2 eV. This is due to the photoionization of carriers from the deep levels associated with the yellow luminescence (YL). In addition, the transient capacitance measurements after the photoionization were also performed in the range of 1.8 to 3.4 eV. The notable transient of capacitance was observed at the photon energies of about 2.1 and 3.4 eV, the former could be associated with the change in the charge state of the YL center and latter might stem from some other defects capturing photogenerated carriers. By using the isothermal capacitance transient spectroscopy (ICTS) analysis, the ICTS peaks due to the deep levels associated with YL were detected at about t = 150 s in both GaN samples. In addition, another ICTS peak was detected only in the Si-doped GaN samples. It is considered that this peak is associated with the deep levels deeper than YL levels and the deeper levels originate from defects induced by Si doping.

Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

2003 ◽  
Vol 764 ◽  
Author(s):  
M. Ahoujja ◽  
H. C. Crocket ◽  
M. B. Scott ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Complete Recovery ◽  
High Energy ◽  
Curve Fit ◽  
Higher Temperature ◽  
Transient Spectroscopy ◽  
Anneal Temperature

AbstractWe report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

Electrical and Optical Properties of Polysilicon Sheets for Photovoltaic Devices Grown From Powder

1990 ◽  
Vol 182 ◽  
Author(s):  
Natko B. Urli
Keyword(s):  
Electrical Transport ◽  
High Efficiency ◽  
Low Cost ◽  
Spectral Response ◽  
Short Circuit ◽  
Zone Melting ◽  
Back Surface ◽  
Incoherent Light ◽  
Novel Technologies ◽  
Pure Graphite

AbstractIn a search for low-cost and high efficiency solar cell manufacturing, several techniques of growing thin silicon sheets from powder have been adopted, such as: plasma spraying on various substrates, zone-melting using incoherent focussed light as heat source, and low-angle horizontal pulling of thin ribbon over the melted tin-lead support. Undoped, and n- and p-type silicon powders of various grain sizes have been used as starting materials, with pure graphite, quartz, or low-cost ceramics serving as temporary or permanent substrates. N+/p +/n junctions, and back surface fields were formed by implanting PF 5 and BF 3+ ions in a glow discharge ion implanter at ultralow energies (less than 1 keg) and high total ion doses. Ion induced damage was annealed by RTP in the incoherent light furnace at temperatures as low as 700°C.Structural and optoelectronic properties of as-grown and processed thin polysilicon sheets were determined by Raman spectroscopy, spectral response, and electrical transport measurements. A sharp peak at 520 cm−1 in the Raman spectra, associated with TO ((Г) phonons, indicated a good crystallinity of polysilicon sheets. High values of short-circuit currents, and an almost flat spectral response down to 400 nm, without intentionally applying a surface passivating oxide, illustrate the advantage of the applied novel technologies.

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