Electrical Characterization of Defects Introduced in 4H-SiC During High Energy Proton Irradiation and Their Annealing Behavior

2003 ◽  
Vol 764 ◽  
Author(s):  
M. Ahoujja ◽  
H. C. Crocket ◽  
M. B. Scott ◽  
Y.K. Yeo ◽  
R. L. Hengehold
Keyword(s):  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Complete Recovery ◽  
High Energy ◽  
Curve Fit ◽  
Higher Temperature ◽  
Transient Spectroscopy ◽  
Anneal Temperature

AbstractWe report on the electrical properties of defects introduced in epitaxial 4H-SiC by 2 MeV protons using deep level transient spectroscopy (DLTS). After proton irradiation with a dose of about 1.5×1014 cm-2, the DLTS measurements were made, and the rate window shows a single broad peak between 280 and 310 K. The intensity of this peak remains unchanged after a thermal anneal at 900°C for 20 min. However, after annealing at or above 1100°C, the peak intensity gradually decreases with anneal temperature up to 1500°C, indicating a decrease in the defect concentration. Because a complete damage recovery of the SiC is not observed even after annealing at 1500°C, we believe a higher temperature annealing is necessary for a complete recovery. Using a curve fit analysis, a set of deep levels of defect centers were found with energy ranging between 567 and 732 meV. These traps do not exhibit a significant change in the trap energy or capture cross-section parameters as a function of anneal temperature, but the decrease in the trap density with increasing anneal temperature demonstrates a damage recovery.

Electrical Characterization of Defects Introduced in n-GaN During High Energy Proton and He-Ion Irradiation

1998 ◽  
Vol 537 ◽  
Author(s):  
S. A. Goodman ◽  
F. D. Auret ◽  
F. K. Koschnick ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Emission Rate ◽  
Ion Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Electron Traps ◽  
Transient Spectroscopy

AbstractWe report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec - 0.196 eV), ER4 (Ec - 0.78 eV), and ER5 (Ec - 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm-1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec -0.13 eV) and ER2 (Ec - 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm-1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

scholarly journals Electrical Characterization of Defects Introduced In n-GaN During High Energy Proton and He-Ion Irradiation

1999 ◽  
Vol 4 (S1) ◽  
pp. 606-611 ◽  
Author(s):  
S. A. Goodman ◽  
F. D. Auret ◽  
F. K. Koschnick ◽  
J.-M. Spaeth ◽  
B. Beaumont ◽  
...  
Keyword(s):  
Proton Irradiation ◽  
Emission Rate ◽  
Ion Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
High Energy ◽  
Electron Traps ◽  
Transient Spectroscopy

We report on the electrical properties of defects as determined by deep level transient spectroscopy (DLTS) introduced in epitaxially grown n-GaN by 2.0 MeV protons and 5.4 MeV He-ions. After He-ion bombardment three electron traps ER3 (Ec − 0.196 eV), ER4 (Ec − 0.78 eV), and ER5 (Ec − 0.95 eV) were introduced uniformly in the region profiled by DLTS with introduction rates of 3270 ± 200, 1510 ± 300, and 3030 ± 500 cm−1 respectively. Capture cross section measurements revealed that the electron capture kinetics of ER5 is similar to that of a line defect. A defect with similar electronic properties as ER3 is observed after 2.0 MeV proton irradiation. The emission rate of ER3 depends on the electric field strength in the space-charge region. This emission rate is modelled according to the Poole-Frenkel distortion of a square well with a radius of 20 ± 2 Å or alternatively, a Gaussian well with a characteristic width of 6.0 ± 1 Å. Hence, we conclude that ER1 is a point defect which appears to have an acceptor like character. Two additional electron traps, ER1 (Ec −0.13 eV) and ER2 (Ec − 0.16eV) with introduction rates of 30 ± 10 and 600 ± 100 cm−1 not thusfar observed after electron or He-ion bombardment were observed after proton irradiation.

Electrical Characterization of Proton Irradiated n-Type ZnO

2006 ◽  
Vol 957 ◽  
Author(s):  
F Danie Auret ◽  
Michael Hayes ◽  
Jackie Nel ◽  
Walter Meyer ◽  
Pieter Johan Janse van Rensburg ◽  
...  
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Proton Irradiation ◽  
Deep Level ◽  
Electrical Characterization ◽  
Low Concentrations ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Irradiation Induced Defects

ABSTRACTRu Schottky barrier diodes (SBD's) were fabricated on the Zn face of n-type ZnO. These diodes were irradiated with 1.8 MeV at fluences ranging from 1 ´ 1013 cm-2 to 2.4 ´ 1014 cm-2. Capacitance and current (I) deep level transient spectroscopy (DLTS) was used to characterise the irradiation induced defects. Capacitance DLTS showed that proton irradiation introduced a level, Ep1, at 0.52 eV below the conduction band at an introduction rate of 13±1 cm-1. A defect with a very similar DLTS signature was also present in low concentrations in unirradiated ZnO. I-DLTS revealed that this proton irradiation introduced a defect with an energy level at (0.036± 0.004) eV below the conduction band. This defect is clearly distinguishable from a defect with a level at (0.033± 0.004) eV below the conduction band that was present in the unirradiated sample. It is speculated that these shallow level defects are related to zinc interstitials or complexes involving them.

Electrical Characterization of 1 keV He-, Ne-, and Ar-Ion Bombarded n-Si Using Deep Level Transient Spectroscopy

1998 ◽  
Vol 510 ◽  
Author(s):  
P.N.K. Deenapanray ◽  
F.D. Auret ◽  
M.C. Ridgway ◽  
S.A. Goodman ◽  
G. Myburg
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ion Bombardment ◽  
Thermally Stable ◽  
Vacancy Clusters ◽  
Transient Spectroscopy ◽  
Low Energy Ions

AbstractWe report on the electrical properties of defects introduced in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Epitaxial layers with different O contents were used in this study. We demonstrate using deep level transient spectroscopy that the low energy ions introduced a family of similarly structured defects (DI) with electronic levels at ∼0.20 eV below the conduction band. The introduction of this set of identical defects was not influenced by the presence of O. Ion bombardment of O-rich Si introduced another family of prominent traps (D2) with levels close to the middle of the band gap. Both sets of defects were thermally stable up to ∼400 °C, and their annealing was accompanied by the introduction of a family of secondary defects (D3). The “D3” defects had levels at ∼0.21 eV below the conduction band and were thermally stable at 650 °C. We have proposed that the “DI”, “D2”, and “D3” defects are higherorder vacancy clusters (larger than the divacancy) or complexes thereof.

Electrical characterization of InGaN/GaN quantum dots by deep level transient spectroscopy

2004 ◽  
Vol 241 (12) ◽  
pp. 2811-2815 ◽  
Author(s):  
J. S. Kim ◽  
E. K. Kim ◽  
H. J. Kim ◽  
E. Yoon ◽  
I.-W. Park ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

scholarly journals Deep‐level transient spectroscopy and electrical characterization of ion‐implantedp‐njunctions into undoped InP

1995 ◽  
Vol 78 (9) ◽  
pp. 5325-5330 ◽  
Author(s):  
Jaime M. Martin ◽  
S. García ◽  
I. Mártil ◽  
G. González‐Díaz ◽  
E. Castán ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Characterization ◽  
Transient Spectroscopy

The Effects of Illumination on Point Defects Detected in High Purity Semi-Insulating 4H-SiC

2018 ◽  
Vol 924 ◽  
pp. 253-256 ◽  
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Lars Knoll ◽  
Vinoth Kumar Sundaramoorthy
Keyword(s):  
Point Defects ◽  
High Purity ◽  
Deep Level Transient Spectroscopy ◽  
Optical Pulse ◽  
Deep Level ◽  
Electrical Characterization ◽  
Ionization Energies ◽  
Transient Spectroscopy

The electrical characterization of high-purity semi-insulating 4H-SiC is carried out by means of current deep level transient spectroscopy (I-DLTS). Measurements are performed by employing either an electrical or optical pulse (below/above bandgap). The study performed on as-grown material, either annealed or oxidized, reveals the presence of six levels with ionization energies in the 0.4-1.3 eV range.

scholarly journals Electrical Characterization of Metastable Defects Introduced in GaN by Eu-Ion Implantation

2011 ◽  
Vol 679-680 ◽  
pp. 804-807 ◽  
Author(s):  
F. Danie Auret ◽  
Walter E. Meyer ◽  
M. Diale ◽  
P.J. Janse Van Rensburg ◽  
S.F. Song ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level ◽  
Energy Levels ◽  
Electrical Characterization ◽  
Defect States ◽  
First Order Kinetics ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Transformation Processes

Gallium nitride (GaN), grown by HVPE, was implanted with 300 keV Eu ions and then annealed at 1000 oC . Deep level transient spectroscopy (DLTS) and Laplace DLTS (L-DLTS) were used to characterise the ion implantation induced defects in GaN. Two of the implantation induced defects, E1 and E2, with DLTS peaks in the 100 – 200 K temperature range, had DLTS signals that could be studied with L-DLTS. We show that these two defects, with energy levels of 0.18 eV and 0.27 eV below the conduction band, respectively, are two configurations of a metastable defect. These two defect states can be reproducibly removed and re-introduced by changing the pulse, bias and temperature conditions, and the transformation processes follow first order kinetics.

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