Deposition and Characterization of Low-Cost Spray Pyrolyzed Cu2ZnSnS4 (CZTS) Thin-Films for Large-Area High-Efficiency Heterojunction Solar Cells

2012 ◽  
Vol 45 (7) ◽  
pp. 153-161 ◽  
Author(s):  
S. Das ◽  
C. Frye ◽  
P. G. Muzykov ◽  
K. C. Mandal
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Low Cost ◽  
Large Area ◽  
Heterojunction Solar Cells ◽  
Czts Thin Films

Fabrication and Characterization of Low-Cost, Large-Area Spray Deposited Cu2ZnSnS4 Thin Films for Heterojunction Solar Cells

2013 ◽  
Vol 1538 ◽  
pp. 115-121
Author(s):  
Sandip Das ◽  
Kelvin J. Zavalla ◽  
M. A. Mannan ◽  
Krishna C Mandal
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Spray Pyrolysis ◽  
Spray Pyrolysis Technique ◽  
Low Cost ◽  
Large Area ◽  
X Ray ◽  
Heterojunction Solar Cells ◽  
Vis Spectroscopy

ABSTRACTLarge-area Cu2ZnSnS4 (CZTS) thin films were deposited by low-cost spray pyrolysis technique on Mo-coated soda-lime glass (SLG) substrates at varied substrate temperatures of 563-703°K. Deposition conditions were optimized to obtain best quality films and effect of post deposition thermal processing of the as-deposited films under H2S ambient were investigated. Structural, morphological, and compositional characterization of as-deposited and H2S treated CZTS absorber layers were carried out by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and energy dispersive x-ray analysis (EDX). Optical and electrical properties were measured by UV-Vis spectroscopy, van der Pauw, and Hall-effect measurements. Films grown at ∼360°C substrate temperature showed superior optoelectronic properties, improved stoichiometry and smoother morphology compared to films grown at much higher or lower temperatures. Film properties were significantly improved after the H2S processing. Our results show that large area high quality CZTS films can be fabricated by low-cost spray pyrolysis technique for high throughput commercial production of CZTS based heterojunction solar cells.

Fabrication of low cost kesterite Cu2ZnSnS4(CZTS) thin films as counter-electrode for dye sensitised solar cells (DSSCs)

2015 ◽  
Vol 30 (5) ◽  
pp. 306-312 ◽  
Author(s):  
S. Chen ◽  
J. Tao ◽  
H. Tao ◽  
Y. Shen ◽  
L. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Counter Electrode ◽  
Low Cost ◽  
Czts Thin Films

scholarly journals Effects of Sulfurization Temperature on Properties of CZTS Films by Vacuum Evaporation and Sulfurization Method

2013 ◽  
Vol 2013 ◽  
pp. 1-6 ◽  
Author(s):  
Jie Zhang ◽  
Bo Long ◽  
Shuying Cheng ◽  
Weibo Zhang
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Crystallite Size ◽  
Low Cost ◽  
Band Gap Energy ◽  
Vacuum Evaporation ◽  
Glass Substrates ◽  
Sulfurization Temperature ◽  
Czts Thin Films

Copper zinc tin sulfur (CZTS) thin films have been extensively studied in recent years for their advantages of low cost, high absorption coefficient (≥104 cm−1), appropriate band gap (~1.5 eV), and nontoxicity. CZTS thin films are promising materials of solar cells like copper indium gallium selenide (CIGS). In this work, CZTS thin films were prepared on glass substrates by vacuum evaporation and sulfurization method. Sn/Cu/ZnS (CZT) precursors were deposited by thermal evaporation and then sulfurized in N2+ H2S atmosphere at temperatures of 360–560°C to produce polycrystalline CZTS thin films. It is found that there are some impurity phases in the thin films with the sulfurization temperature less than 500°C, and the crystallite size of CZTS is quite small. With the further increase of the sulfurization temperature, the obtained thin films exhibit preferred (112) orientation with larger crystallite size and higher density. When the sulfurization temperature is 500°C, the band gap energy, resistivity, carrier concentration, and mobility of the CZTS thin films are 1.49 eV, 9.37 Ω · cm,1.714×1017 cm−3, and 3.89 cm2/(V · s), respectively. Therefore, the prepared CZTS thin films are suitable for absorbers of solar cells.

RF magnetron sputtered ITO:Zr thin films for the high efficiency a-Si:H/c-Si heterojunction solar cells

2014 ◽  
Vol 20 (3) ◽  
pp. 565-569 ◽  
Author(s):  
Shahzada Qamar Hussain ◽  
Sunbo Kim ◽  
Shihyun Ahn ◽  
Hyeongsik Park ◽  
Anh Huy Tuan Le ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
High Efficiency ◽  
Heterojunction Solar Cells

CdTe Thin-Film Solar Cells

MRS Bulletin ◽  
1993 ◽  
Vol 18 (10) ◽  
pp. 45-47 ◽  
Author(s):  
T. Suntola
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cadmium Telluride ◽  
High Efficiency ◽  
Low Cost ◽  
Thick Layer ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Large Area ◽  
Cell Structures

Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.

Characterization of thin epitaxial emitters for high-efficiency silicon heterojunction solar cells

2012 ◽  
Vol 101 (10) ◽  
pp. 103906 ◽  
Author(s):  
Bahman Hekmatshoar ◽  
Davood Shahrjerdi ◽  
Marinus Hopstaken ◽  
John A. Ott ◽  
Devendra K. Sadana
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Heterojunction Solar Cells ◽  
Silicon Heterojunction Solar Cells
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