Synchrotron White Beam Topography Studies of Residual Stress in SiC Single Crystal Wafers with Epitaxial Thin Films

1995 ◽  
Vol 399 ◽  
Author(s):  
W. Huang ◽  
Q. Wang ◽  
M. Dudley ◽  
F. P. Chiang ◽  
J. Parsons ◽  
...  
Keyword(s):  
Residual Stress ◽  
High Energy ◽  
Epitaxial Thin Films ◽  
Multiple Diffraction ◽  
X Ray ◽  
Wafer Curvature ◽  
White Beam ◽  
Curvature Measurement ◽  
Reflection Geometry ◽  
Sic Wafer

ABSTRACTThe residual stress in a 6H-SiC wafer with a 3C-SiC epitaxial overlayer is determined by the technique of Synchrotron white beam x-ray topography (SWBXT). The short wavelength and high energy attributes of synchrotron radiation are exploited to very accurately determine the wafer curvature. Different approaches including absorption edge contour (AEC) mapping, multiple diffraction line (MDL) analysis and diffracted x-ray beam divergence (DXBD) analysis in both transmission and reflection geometry are demonstrated. The residual stress distribution is calculated from the wafer curvature measurement.

Residual Stress in Sputtered Silicon Oxycarbide Thin Films

2011 ◽  
Vol 1299 ◽  
Author(s):  
Ping Du ◽  
I-Kuan Lin ◽  
Yunfei Yan ◽  
Xin Zhang
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Elevated Temperatures ◽  
Silicon Oxide ◽  
Composite Films ◽  
Deposition Process ◽  
Silicon Oxycarbide ◽  
X Ray ◽  
Curvature Measurement ◽  
Film Substrate

ABSTRACTSilicon carbide (SiC) has received increasing attention on the integration of microelectro-mechanical system (MEMS) due to its excellent mechanical and chemical stability at elevated temperatures. However, the deposition process of SiC thin films tends to induce relative large residual stress. In this work, the relative low stress material silicon oxide was added into SiC by RF magnetron co-sputtering to form silicon oxycarbide (SiOC) composite films. The composition of the films was characterized by Energy dispersive X-ray (EDX) analysis. The Young’s modulus and hardness of the films were measured by nanoindentation technique. The influence of oxygen/carbon ratio and rapid thermal annealing (RTA) temperature on the residual stress of the composite films was investigated by film-substrate curvature measurement using the Stoney’s equation. By choosing the appropriate composition and post processing, a film with relative low residual stress could be obtained.

Structural Defect Studies of Semiconductor Crystals with Laue Topography

2011 ◽  
Vol 178-179 ◽  
pp. 360-365 ◽  
Author(s):  
Alexander Gröschel ◽  
Johannes Will ◽  
Christoph Bergmann ◽  
Hannes Grillenberger ◽  
Stefan Eichler ◽  
...  
Keyword(s):  
High Energy ◽  
Structural Defects ◽  
Dislocation Network ◽  
X Ray ◽  
Gaas Wafer ◽  
Semiconductor Crystals ◽  
White Beam ◽  
Oxygen Precipitates ◽  
Si Wafer

A defocused Laue diffractometer setup operating with the white beam of a high energy X-ray tube has been used for a topographic visualization of structural defects in semiconductor wafers. The laboratory white beam X-ray topograph of a Czochralski Si wafer with oxygen precipitates grown in an annealing process is compared to a μPCD image. Further, the dislocation network in a VGF GaAs wafer is studied under thermal annealing up to 1140°C and the in-situ capability of the setup is demonstrated.

PHASE FORMATION AND TEXTURE DEVELOPMENT IN AG-SHEATHED Bi, Pb(2223) TAPES STUDIED BY DIFFERENT IN-SITU AND EX-SITU DIFFRACTION TECHNIQUES

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2688-2693 ◽  
Author(s):  
E. GIANNINI ◽  
E. BELLINGERI ◽  
F. MARTI ◽  
M. DHALLÉ ◽  
V. HONKIMÄKI ◽  
...  
Keyword(s):  
High Energy ◽  
Texture Development ◽  
Ex Situ ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scattering Geometry ◽  
Reflection Geometry ◽  
Comparison Of The Results ◽  
In Situ Neutron Diffraction

In-situ and ex-situ high energy (80÷88 keV) X-Ray diffraction from a synchrotron radiation source were performed on multifilamentary Bi, Pb(2223)/Ag tapes using a transmission scattering geometry. Several thermo-mechanical procedures were compared, focusing mainly on the texture development of both Bi, Pb(2212) and Bi, Pb(2223) phases. The effect of the periodic pressing on the texture and on the critical current is elucidated. The texture development of the Bi, Pb(2212) phase prior to its transformation into Bi, Pb(2223) was directly observed in-situ at high temperature by using a dedicated high-energy X-ray compatible furnace and a high resolution Image Plate detector. A sharp increase of the Bi, Pb(2212) grain orientation along the [00l] direction was found to occur only above 750°C. Normal state transport measurements are in full agreement with the formation mechanism and with the texture development observed. A comparison of the results with the ones provided by in-situ neutron diffraction and standard low-energy XRD in a reflection geometry is presented.

S119 Residual Stress Mapping in a Pipe Weld Repair Using High Energy X-ray Diffraction

2008 ◽  
Vol 23 (2) ◽  
pp. 189-189
Author(s):  
P. J. Bouchard ◽  
M. Turski ◽  
L. Edwards
Keyword(s):  
Residual Stress ◽  
High Energy ◽  
X Ray Diffraction ◽  
Weld Repair ◽  
X Ray ◽  
Stress Mapping

Experimental determination of residual stress in silicon nitride diffusion bonds obtained by high-energy X-ray diffraction

2004 ◽  
Vol 148 (1) ◽  
pp. 60-63 ◽  
Author(s):  
M. Vila ◽  
M.L. Martínez ◽  
C. Prieto ◽  
P. Miranzo ◽  
M.I. Osendi ◽  
...  
Keyword(s):  
Residual Stress ◽  
Silicon Nitride ◽  
Experimental Determination ◽  
High Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Bonds

scholarly journals Determination of Stresses in Incrementally Deposited Films From Wafer-Curvature Measurements

2020 ◽  
Vol 87 (10) ◽  
Author(s):  
Zhaoxia Rao ◽  
Hanxun Jin ◽  
Alison Engwall ◽  
Eric Chason ◽  
Kyung-Suk Kim
Keyword(s):  
Residual Stress ◽  
Finite Thickness ◽  
Deposition Process ◽  
Wafer Curvature ◽  
Curvature Measurement ◽  
Stressed Layer ◽  
Relaxation Stress ◽  
Curvature Measurements ◽  
Deposited Films

Abstract We report closed-form formulas to calculate the incremental-deposition stress, the elastic relaxation stress, and the residual stress in a finite-thickness film from a wafer-curvature measurement. The calculation shows how the incremental deposition of a new stressed layer to the film affects the amount of the film/wafer curvature and the stress state of the previously deposited layers. The formulas allow the incremental-deposition stress and the elastic relaxation to be correctly calculated from the slope of the measured curvature versus thickness for arbitrary thicknesses and biaxial moduli of the film and the substrate. Subtraction of the cumulative elastic relaxation from the incremental-deposition stress history results in the residual stress left in the film after the whole deposition process. The validities of the formulas are confirmed by curvature measurements of electrodeposited Ni films on substrates with different thicknesses.

Keynote Lecture: Residual Stress Gradient Analysis by Multiple Diffraction Line Methods

2013 ◽  
Vol 768-769 ◽  
pp. 3-18 ◽  
Author(s):  
Christoph Genzel ◽  
Daniel Apel ◽  
Manuela Klaus ◽  
Martin Genzel ◽  
Davor Balzar
Keyword(s):  
Residual Stress ◽  
Gradient Analysis ◽  
Stress Gradient ◽  
High Energy ◽  
Real Space ◽  
Multiple Diffraction ◽  
Near Surface ◽  
Measured Strain ◽  
Diffraction Patterns ◽  
Residual Stress Gradient

The paper deals with methods for X-ray stress analysis (XSA), which allow for the evaluation of near surface in-plane residual stress gradients σ||(τ) and σ||(z) in the LAPLACE- and the real space, respectively. Since the ‘robustness’ of residual stress gradient analysis strongly depends on both, the quality of the measured strain data and the number of experimental data points, the discussion aims at those approaches which are based on processing various diffraction lines or even complete diffraction patterns. It is shown that these techniques, which were originally developed for angle-dispersive (AD) diffraction, can be adapted and enhanced for energy-dispersive (ED) diffraction employing high-energy synchrotron radiation. With the example of a shot-peened ferritic steel it is demonstrated, that sin²ψ-data measured in the Ψ-mode of XSA employing the ED diffraction technique can be analyzed on different levels of approximation.

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