Room Temperature Damage, Annealing and Dislocation Growth in Silicon

1994 ◽  
Vol 373 ◽  
Author(s):  
R.G. Elliman ◽  
I.V. Mitchell
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Extended Defects ◽  
High Temperature Annealing ◽  
Primary Defect ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Sensitive Function ◽  
Temperature Damage

AbstractThe concentration of residual defects produced by self ion implantation of silicon has been shown to be a sensitive function of implantation temperature at temperatures near room temperature. In this study samples were heated to temperatures of 20°C and 60°C and implanted with 540 keV Si ions to a fluence of 2x1015Si.cm-2 using a constant scanned ion flux of 0.2 μA.cm-2. The resultant primary defect concentrations, measured by Rutherford backscattering spectrometry and channelling (RBS-C), were 2.3±0.1x1022 cm-l and 1.8±0.2x1021 cm-3, respectively, i.e. a reduction by a factor of σ13 for a temperature increase of 40°C. Such differences were not evident in the concentration of secondary defects formed by annealing these samples at 900°C for 15 minutes: the defect concentrations were equal within the experimental uncertainties of the RBS-C and transmission electron microscopy (TEM) measurements. This result appears to lead to the surprising conclusion that the number of displaced atoms that survive high temperature annealing to form extended defects is largely independent of the dynamic annealing processes operating during implantation but depends instead on parameters which scale with the ion fluence.

Effects of Implantation Temperature on the Structure, Composition and Oxidation Resistance of Sic

1994 ◽  
Vol 354 ◽  
Author(s):  
Zunde Yang ◽  
Honghua Du ◽  
Matthew Libera ◽  
Irwin L. Singer
Keyword(s):  
Electron Microscopy ◽  
Oxidation Resistance ◽  
Room Temperature ◽  
Aluminum Carbide ◽  
High Dose ◽  
Accelerated Oxidation ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Oxidation Layers ◽  
Flowing Oxygen

Abstractɑ-SiC crystals were implanted with aluminum to a high dose at room temperature or 800°C. Studies by transmission electron microscopy showed that SiC was amorphized by room temperature implantation but remained crystalline at 800°C. Crystalline aluminum carbide was formed and aluminum redistribution took place in SiC implanted at 800°C. Implanted and unimplanted crystals were oxidized in 1 atm flowing oxygen at 1300°C. Amorphization led to accelerated oxidation of SiC. The oxidation resistance of SiC implanted at 800°C was comparable to that of pure SiC. The oxidation layers formed on SiC implanted at both temperatures consisted of silica embedded with mullite precipitates. The phase formation during implantation and oxidation is consistent with thermodynamic predictions.

RBS, TEM and SEM Characterization of Gold Nanoclusters in TiO2(110)

2003 ◽  
Vol 792 ◽  
Author(s):  
V. Shutthanandan ◽  
Y. Zhang ◽  
C. M. Wang ◽  
J. S. Young ◽  
L. Saraf ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Gold Nanoclusters ◽  
Subsequent Annealing ◽  
Transmission Electron ◽  
Scanning Electron

ABSTRACTNucleation of gold nanoclusters in TiO2(110) single crystal using ion implantation and subsequent annealing were studied by Rutherford backscattering spectrometry /channeling (RBS/C), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). Approximately 1000 Au2+/nm2 were implanted at room temperature in TiO2(110) substrates. TEM and SEM measurements reveal that rounded nanoclusters were formed during the implantation. In contrast, subsequent annealing in air for 10 hours at 1275 K promoted the formation of faceted (rectangular shaped) Au nanostructures in TiO2. RBS channeling measurements further reveled that Au atoms randomly occupied the host TiO2 lattice during the implantation. However, it appears that some Au atoms moved to the Ti lattice positions after annealing.

Dose and Doping Dependence of Damage Annealing in Fe Mev Implanted Inp

1995 ◽  
Vol 396 ◽  
Author(s):  
A. Carnera ◽  
B. Fraboni ◽  
A. Gasparotto ◽  
F. Priolo ◽  
A. Camporese ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Defect Structure ◽  
Damage Evolution ◽  
Rutherford Backscattering Spectrometry ◽  
High Energy ◽  
Primary Defect ◽  
Secondary Damage ◽  
Transmission Electron ◽  
Secondary Ions

AbstractHigh energy (2 MeV) ion implantation of Fe in InP has been investigated by means of Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM) and secondary ions mass spectrometry (SIMS). The implanted doses ranged between 5×l013 and 5×l014 at/cm2. Annealing in the 650–800 °C range was performed and the primary as well as secondary damage evolution has been studied. The correlations between defect structure and Fe redistribution properties have been carefully analysed. The results show the role of the primary defect structure in determining the annealing properties, both for damage recovery and Fe redistribution. The latter is also influenced by the doping of the substrate.

Anomalous Evolution of Bubbles in Krypton-Implanted SiO2

2007 ◽  
Vol 994 ◽  
Author(s):  
Hannan Assaf ◽  
Esidor Ntsoenzok ◽  
Marie-France Barthe ◽  
Elisa Leoni ◽  
Marie-Odile Ruault ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thermal Stability ◽  
Transmission Electron Microscopy ◽  
Positron Annihilation ◽  
Room Temperature ◽  
Rutherford Backscattering Spectrometry ◽  
Vacancy Concentration ◽  
Positron Annihilation Spectroscopy ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractThermally grown SiO2 was implanted at room temperature with 220 keV Kr in order to generate bubbles/cavities in the sample. The formation and thermal stability of these bubbles/cavities is studied in this work. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterisation of defects (bubbles, vacancy, Kr and other types of defects) created by Kr implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM were a consequence of the interaction between Kr and vacancies (V), with VnXem complexes created in the whole of implanted zone. After annealing, bubbles/cavities disappear from SiO2 due to the strongly desorption of Kr and the decrease in vacancy concentration.

Scanning and Transmission Electron Microscopy of Human Red Blood Cells

1969 ◽  
Vol 27 ◽  
pp. 44-45
Author(s):  
A.J. Tousimis ◽  
T.R. Padden
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Blood Cells ◽  
Room Temperature ◽  
Type Specimen ◽  
New Combination ◽  
Human Red Blood Cells ◽  
Transmission Electron ◽  
Microscope Slides ◽  
Scanning Electron

The size, shape and surface morphology of human erythrocytes (RBC) were examined by scanning electron microscopy (SEM), of the fixed material directly and by transmission electron microscopy (TEM) of surface replicas to compare the relative merits of these two observational procedures for this type specimen.A sample of human blood was fixed in glutaraldehyde and washed in distilled water by centrifugation. The washed RBC's were spread on freshly cleaved mica and on aluminum coated microscope slides and then air dried at room temperature. The SEM specimens were rotary coated with 150Å of 60:40- gold:palladium alloy in a vacuum evaporator using a new combination spinning and tilting device. The TEM specimens were preshadowed with platinum and then rotary coated with carbon in the same device. After stripping the RBC-Pt-C composite film, the RBC's were dissolved in 2.5N HNO3 followed by 0.2N NaOH leaving the preshadowed surface replicas showing positive topography.

Formation of Dislocation Channels in Neutron Irradiated Molybdenum

1972 ◽  
Vol 30 ◽  
pp. 672-673
Author(s):  
S. Mahajan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ambient Temperature ◽  
Room Temperature ◽  
Channel Formation ◽  
Early Stages ◽  
Transmission Electron ◽  
Three Stages ◽  
Two Stages ◽  
Polycrystalline Molybdenum

The evolution of dislocation channels in irradiated metals during deformation can be envisaged to occur in three stages: (i) formation of embryonic cluster free regions, (ii) growth of these regions into microscopically observable channels and (iii) termination of their growth due to the accumulation of dislocation damage. The first two stages are particularly intriguing, and we have attempted to follow the early stages of channel formation in polycrystalline molybdenum, irradiated to 5×1019 n. cm−2 (E > 1 Mev) at the reactor ambient temperature (∼ 60°C), using transmission electron microscopy. The irradiated samples were strained, at room temperature, up to the macroscopic yield point.Figure 1 illustrates the early stages of channel formation. The observations suggest that the cluster free regions, such as A, B and C, form in isolated packets, which could subsequently link-up to evolve a channel.

TEM processing procedure for a bacillus organism grown on solid media

1990 ◽  
Vol 48 (3) ◽  
pp. 624-625
Author(s):  
Jane Payne ◽  
Philip Coudron
Keyword(s):  
Electron Microscopy ◽  
Room Temperature ◽  
Fume Hood ◽  
Vacuum Aspiration ◽  
Solid Media ◽  
Transmission Electron ◽  
Solid Agar ◽  
Processing Procedure ◽  
Agar Media ◽  
Rat Bone

This transmission electron microscopy (TEM) procedure was designed to examine a gram positive spore-forming bacillus in colony on various solid agar media with minimal artifact. Cellular morphology and organization of colonies embedded in Poly/Bed 812 resin (P/B) were studied. It is a modification of procedures used for undecalcified rat bone and Stomatococcus mucilaginosus.Cultures were fixed and processed at room temperature (RT) under a fume hood. Solutions were added with a Pasteur pipet and removed by gentle vacuum aspiration. Other equipment used is shown in Figure 3. Cultures were fixed for 17-18 h in 10-20 ml of RT 2% phosphate buffered glutaraldehyde (422 mosm/KgH2O) within 5 m after removal from the incubator. After 3 (30 m) changes in 0.15 M phosphate buffer (PB = 209-213 mosm/KgH2O, pH 7.39-7.41), colony cut-outs (CCO) were made with a scalpel.

A crystallographic analysis of the CoSi/Si(111) interface using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 574-575
Author(s):  
A.C. Daykin ◽  
C.J. Kiely ◽  
R.C. Pond ◽  
J.L. Batstone
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Defect Structure ◽  
Room Temperature ◽  
Theoretical Method ◽  
Crystallographic Analysis ◽  
Si Substrate ◽  
Transmission Electron ◽  
Theoretical Predictions

When CoSi2 is grown onto a Si(111) surface it can form in two distinct orientations. A-type CoSi2 has the same orientation as the Si substrate and B-type is rotated by 180° degrees about the [111] surface normal.One method of producing epitaxial CoSi2 is to deposit Co at room temperature and anneal to 650°C.If greater than 10Å of Co is deposited then both A and B-type CoSi2 form via a number of intermediate silicides .The literature suggests that the co-existence of A and B-type CoSi2 is in some way linked to these intermediate silicides analogous to the NiSi2/Si(111) system. The phase which forms prior to complete CoSi2 formation is CoSi. This paper is a crystallographic analysis of the CoSi2/Si(l11) bicrystal using a theoretical method developed by Pond. Transmission electron microscopy (TEM) has been used to verify the theoretical predictions and to characterise the defect structure at the interface.

Synthesis and TEM study of Ag–In–(Eu, Ce) ternary approximants

2009 ◽  
Vol 224 (1-2) ◽  
Author(s):  
Kazue Nishimoto ◽  
Miki Muraki ◽  
Ryuji Tamura
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Room Temperature ◽  
Transmission Electron

AbstractTernary Ag–In–(Eu, Ce) 1/1 approximants are synthesized and their structures are studied by transmission electron microscopy (TEM). For both the approximants, superlattice spots are clearly observed at room temperature, and the superstructures of the Ag–In–(Eu, Ce) approximants are found to be similar to those of Cd

Dechannealing Study of Nanocrystalline Si:H Layers Produced by High Dose Hydrogen Irradiation of Silicon Crystals

1998 ◽  
Vol 536 ◽  
Author(s):  
V. P. Popov ◽  
A. K. Gutakovsky ◽  
I. V. Antonova ◽  
K. S. Zhuravlev ◽  
E. V. Spesivtsev ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Nanocrystalline Structure ◽  
Structural Defects ◽  
High Dose ◽  
Silicon Crystals ◽  
Strong Energy ◽  
Transmission Electron ◽  
Hydrogen Implantation

AbstractA study of Si:H layers formed by high dose hydrogen implantation (up to 3x107cm-2) using pulsed beams with mean currents up 40 mA/cm2 was carried out in the present work. The Rutherford backscattering spectrometry (RBS), channeling of He ions, and transmission electron microscopy (TEM) were used to study the implanted silicon, and to identify the structural defects (a-Si islands and nanocrystallites). Implantation regimes used in this work lead to creation of the layers, which contain hydrogen concentrations higher than 15 at.% as well as the high defect concentrations. As a result, the nano- and microcavities that are created in the silicon fill with hydrogen. Annealing of this silicon removes the radiation defects and leads to a nanocrystalline structure of implanted layer. A strong energy dependence of dechanneling, connected with formation of quasi nanocrystallites, which have mutual small angle disorientation (<1.50), was found after moderate annealing in the range 200-500°C. The nanocrystalline regions are in the range of 2-4 nm were estimated on the basis of the suggested dechanneling model and transmission electron microscopy (TEM) measurements. Correlation between spectroscopic ellipsometry, visible photoluminescence, and sizes of nanocrystallites in hydrogenated nc-Si:H is observed.

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