scholarly journals Mev Ion Beam Induced Index of Refraction Changes in Layered GaAs/AlGaAs Waveguides

1995 ◽  
Vol 396 ◽  
Author(s):  
T. Taylor ◽  
D. Ila ◽  
R. L. Zimmerman ◽  
P. R. Ashley ◽  
D. B. Poker
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Electronic Energy ◽  
Index Of Refraction ◽  
Propagation Loss ◽  
Carbon Ions ◽  
Practical Applications ◽  
Oxygen Ions ◽  
Electronic Energy Transfer ◽  
Channel Waveguides

AbstractPreviously, we showed that localized optical modifications could be produced without subsequent post thermal annealing in selectively masked planar GaAs/Al 4Ga6As waveguide structures using 10 MeV oxygen ions. In our present investigation, irradiation experiments were performed on masked GaAs/Al 4Ga6As waveguide samples at 298 K using 10 MeV oxygen and 8 MeV carbon ions. The two ion incident energies were chosen to yield the maximum electronic stopping power near the interface septing the top cladding layer and the guiding layer. This localized modification process emphasizes the crucial role that the electronic energy transfer plays on the degree to which the refractive index of the guiding layer is altered. Propagation loss measurements on the fabricated channel waveguides were performed by end fire coupling a laser diode source at a wavelength of 1.3 μm. Observation of the extracted propagation loss values reveal that further optimization of the ion beam pmeters are required before practical applications can be achieved. The relative efficiency of the various ions to induce optically altered regions which serve as lateral confinement barriers of laser light shows that this fabrication process is sensitive to the ion beam current.

scholarly journals Fabrication of Optical Channel Waveguides in the GaAs/AlGaAs System by Mev Ion Beam Bombardment

1994 ◽  
Vol 373 ◽  
Author(s):  
T. Taylor ◽  
D. Ila ◽  
R. L. Zimmerman ◽  
P. R. Ashley ◽  
D. B. Poker
Keyword(s):  
Planar Waveguide ◽  
Ion Beam ◽  
High Energy ◽  
Optical Measurements ◽  
Optical Channel ◽  
Material System ◽  
Optical Confinement ◽  
Quantum Well Structures ◽  
Oxygen Ions ◽  
Channel Waveguides

AbstractWe have fabricated optical channel waveguides in planar GaAs/AlGaAs waveguides using 10 MeV oxygen ions at a fluence of 3x1013 and 3x1014 ions/cm2. Although disordering of GaAs/AlGaAs quantum well structures has previously been reported, to the best of the authors' knowledge the fabrication of channel waveguides using high energy oxygen bombardment has not been demonstrated in this material system. This technique may provide a totally new concept of localized material modifications in GaAs/AlGaAs waveguides by creating compositional disordered regions that act as optical confinement channels. The masking technique used to provide selective disordering of the planar waveguide structures will be presented. Optical measurements were performed on the channel waveguides at a wavelength of 1.3 μm.

Treаtment of аluminа сerаmiсs by intense eleсtrоn аnd iоn beаms

2021 ◽  
Vol 102 (2) ◽  
pp. 50-55
Author(s):  
S.А. Ghyngаzоv ◽  
◽  
V.А. Kоstenkо ◽  
S.V. Matrenin ◽  
A.I. Kupchishin ◽  
...  
Keyword(s):  
Electron Beam Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Beam Current ◽  
Ion Beams ◽  
Ceramic Surface ◽  
Carbon Ions ◽  
Alumina Ceramics ◽  
Beam Irradiation ◽  
Surface Layers

The paper investigated modification of the microstructure of the surface layers of alumina ceramics under exposure to electron and ion beams. Electron beam irradiation was performed at accelerating voltage U = 15 kV and beam current of J = 70 A and J = 100 A. Ion irradiation was performed with carbon ions at accelerating voltage of U = 180 keV. The current density and energy density varied in the range of 15–85 A/cm2 and 0.3–1.5 J/cm2 , respectively. The amount of energy acting on the ceramic surface depended on the number of pulses N. It is shown that exposure to electron and ion beams changes the microstructure of the irradiated ceramic layer. In general, the effect of exposure is similar for electron and ion irradiation, and it is characterized not only by surface melting, but also by formation of a finer microstructure through the depth of the irradiated layer, which is oriented in the direction of the electron and ion beam exposure. It is shown that crystallization processes in overheated layers of ceramics depend on its type and melting point.

Thermal Annealing Investigation of the Optical Properties of Si1-xNx Films Fabricated by Ion Beam Assisted Deposition

1988 ◽  
Vol 128 ◽  
Author(s):  
E. P. Donovan ◽  
C. A. Carosella ◽  
D. Van Vechten
Keyword(s):  
Optical Properties ◽  
Ion Beam ◽  
Optical Filters ◽  
Beam Current ◽  
Index Of Refraction ◽  
Silicon Substrates ◽  
Atom Fraction ◽  
Ion Beam Assisted Deposition ◽  
Deposition Parameters ◽  
Nitrogen Ion

ABSTRACTThe annealing behavior of the optical properties of silicon nitride films (Si1-xNx) is described for films fabricated by ion beam assisted deposition. The data are needed for the precise manufacture of optical filters, where the index of refraction must be predicted from deposition parameters and film annealing history.The reflection of homogeneous, amorphous samples deposited on (100) silicon substrates was measured from 500 to 3120 nm. Fits to the interference spectra were obtained over the range 1000 to 3120 nm to obtain the index of refraction vs wavelength as a function of film nitrogen content. Nitrogen atom fraction was varied from.2 to.58 by variation of the incident relative fluxes of nitrogen ion beam current to evaporant silicon flux. The films were annealed in argon at 450 C, 600 C, 750 C, and 1100 C and the measurements repeated. The systematic shifts in index of refraction with annealing temperature are described.

Superfluorescence of Ion Beam Synthesized Dense-Packed Embedded CdSe Nanoclusters

2004 ◽  
Vol 829 ◽  
Author(s):  
H. Karl ◽  
I. Groβhans ◽  
P. Huber ◽  
B. Stritzker
Keyword(s):  
Thermal Treatment ◽  
Size Distribution ◽  
Laser Power ◽  
Ion Beam ◽  
Excitation Power ◽  
Electronic Energy ◽  
Linear Increase ◽  
Pump Laser ◽  
High Dose ◽  
Electronic Energy Transfer

Dense-packed embedded semiconductor quantum dot (QD) layers with a multimodal size distribution are representing new types of QD solids. Their optical and electronic properties are modified due to dipole-dipole interactions and tunneling effects. In this work sequential high dose ion implantation of Cd and Se and subsequent thermal treatment is used to synthesize QD assemblies with the required structural properties in the surface near region of 500 nm thick thermally grown SiO2 on Silicon. We used cw photoluminescence (PL) to study PL-yield as a function of pump laser power at low temperatures for different various stoichiometries and annealing conditions. In these embedded QD assemblies of mixed size distribution we detected a promising non-linear increase of the PL-intensity with laser excitation power. The exponents evaluated are maximal for implanted Cd:Se-dose ratios between 0.8 and 1.0. The power law dependence of the PL-yield on pump laser power will be discussed in context with electronic energy transfer between dense-packed QD's of different size, implanted dose ratios and postimplantation thermal treatment conditions.

scholarly journals Substrate Heating Measurements in Pulsed Ion Beam Film Deposition

1995 ◽  
Vol 388 ◽  
Author(s):  
J. C. Olson ◽  
M. O. Thompson ◽  
H. A. Davis ◽  
D. J. Rej ◽  
W. J. Waganaar ◽  
...  
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
National Laboratory ◽  
Beam Current ◽  
Film Deposition ◽  
Los Alamos National Laboratory ◽  
Oxygen Ions ◽  
Substrate Heating ◽  
Ion Energies ◽  
Deposited Films

AbstractDiamond-like Carbon(DLC) films have been deposited at Los alamos National Laboratory by pulsed ion beam ablation of graphite targets. the targets are illuminated by an intense beam of hydrogen, carbon, and oxygen ions at a fluence of 15-45 J/cm2. Ion energies are on the order of 350 keV, with beam current rising to 35 kA over a 400 ns ion current pulse.Raman spectra of the deposited films indicate an increasing ratio of sp3 to sp2 bonding as the substrate is moved further away from the target and further off the target normal. Using a thin film platinum resistor at various positions, we have measured the heating of the substrate surface due to the kinetic energy and heat of condensation of the ablated material. Plume power density and energy input are inferred from the temperature measurements. This information is used to determine if substrate heating is responsible for the lack of DLC in positions close to the target and near the target normal.

Reactive Deposition of Dielectrics by Ion Beam Assisted E-beam Evaporation

2006 ◽  
Vol 983 ◽  
Author(s):  
Joshua Nightingale ◽  
T. Cornell ◽  
P. Samudrala ◽  
P. Poloju ◽  
L. A. Hornak ◽  
...  
Keyword(s):  
Aluminum Oxide ◽  
Ion Beam ◽  
Source Parameters ◽  
Electron Beam Evaporation ◽  
Ion Source ◽  
Source Material ◽  
Index Of Refraction ◽  
Oxygen Ions ◽  
Reactive Deposition ◽  
Scale Thickness

AbstractFabrication of high index contrast waveguide stacks for biosensing and other applications require nanometer scale thickness control. Nanoscale dielectric films from electron-beam evaporation can be difficult to obtain due to the resulting porosity and poor stoichiometry of the films. An alternative approach is the reactive deposition of the film from a metal source in the presence of oxygen ions. Using spectroscopic ellipsometry, we have shown that greater control over thickness and index of refraction of silicon dioxide depositions can be obtained through reactive depositions as compared to depositions from SiO2 dielectric source material itself. Through Fourier Transform Infrared Spectroscopy (FT-IR), the Si-O in-phase stretching peak at 1078 cm-1 can be traced, allowing us to determine the stoichiometry of the film.The effects of performing depositions of aluminum oxide dielectric source material in the presence of oxygen ions has also been investigated. Through the use of the oxygen ion source, greater control over index of refraction and optical losses has been observed. By controlling ion source parameters, the aluminum oxide films’ index of refraction can be engineered within a range of 1.58 to 1.64, and waveguide losses can be reduced to as low as 2.0 dB/cm.

Effects of Ion Beam Milling on Surface Topography

1973 ◽  
Vol 31 ◽  
pp. 84-85
Author(s):  
P.G. Pawar ◽  
P. Duhamel ◽  
G.W. Monk
Keyword(s):  
Surface Topography ◽  
Ion Beam ◽  
Solid Material ◽  
Beam Current ◽  
Atomic Mass ◽  
Micro Milling ◽  
Ion Milling ◽  
Controlled Atmospheres ◽  
Milling Operations ◽  
Sufficient Energy

A beam of ions of mass greater than a few atomic mass units and with sufficient energy can remove atoms from the surface of a solid material at a useful rate. A system used to achieve this purpose under controlled atmospheres is called an ion miliing machine. An ion milling apparatus presently available as IMMI-III with a IMMIAC was used in this investigation. Unless otherwise stated, all the micro milling operations were done with Ar+ at 6kv using a beam current of 100 μA for each of the two guns, with a specimen tilt of 15° from the horizontal plane.It is fairly well established that ion bombardment of the surface of homogeneous materials can produce surface topography which resembles geological erosional features.

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Quantitative Electrical Analysis of FIB Prepared Vias on BiCMOS and CMOS090 Designs

2006 ◽  
Author(s):  
B. Domengès ◽  
P. Poirier
Keyword(s):  
Ion Beam ◽  
Beam Current ◽  
Kelvin Probe ◽  
Metal Line ◽  
Cross Sectional ◽  
Probe Technique ◽  
Cross Sectional Analysis ◽  
Controlling Parameter ◽  
Electrical Analysis ◽  
Sectional Analysis

Abstract In this study, the resistance of FIB prepared vias was characterized by the Kelvin probe technique and their physical characteristics studied using cross-sectional analysis. Two domains of resistivity were isolated in relation to the ion beam current used for the deposition of the via metal (Pt). Also submicrometer vias were investigated on 4.2 µm deep metal lines of a BiCMOS aluminum based design and a CMOS 090 copper based one. It is shown that the controlling parameter is the shape and volume of the contact, and that the contact formation is favored by the amount of over-mill of the via into the metal line it will contact.

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