Nitrogen Plasma Ion Implantation into Carbon Films Deposited by the Anodic Vacuum ARc

1995 ◽  
Vol 388 ◽  
Author(s):  
Imad F. Husein ◽  
Fan Li ◽  
Yuanzhong Zhou ◽  
Ryne C. Allen ◽  
Chung Chan
Keyword(s):  
Ion Implantation ◽  
Carbon Nitride ◽  
Nitrogen Plasma ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Si Substrates ◽  
Plasma Immersion Ion Implantation ◽  
Nitrogen Bond

AbstractAmorphous carbon films (a-C) deposited by the anodic vacuum arc on Si substrates were implanted with nitrogen using the Plasma Immersion Ion Implantation (PIII) technique to form carbon nitride films (CNX). Scanning Electron Microscopy (SEM) of the a-C films show a surface morphology with maximum grain size in the order of a few nanometers and the exclusion of macroparticles. INcreasing the nitrogen content of the CNX films increased the intensity of the X-ray Photoelecton Spectroscopy (XPS) C Is peak at 286.6 eV and formed a new peak at 285.6 eV which both can be associated with the carbon-nitrogen bond formation. Nanoindentaiton measurements showed that the hardness of the a-C films increased after implanting nitrogen into them. these CNX films exhibited a hardness of 19 GP A.

Carbon Nitride (Cnx) Films Formed by Ion Implantation into Thin Carbon Films

1995 ◽  
Vol 396 ◽  
Author(s):  
Imad F. Husein ◽  
Yuanzhong Zhou ◽  
Chung Chan ◽  
Jacob I. Kleiman ◽  
Yu Gudimenko ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Carbon Nitride ◽  
Ion Beam ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Si Substrates ◽  
Thin Carbon ◽  
Nitrogen Ion ◽  
Nitrogen Bonds

AbstractCarbon nitride (CNX) films were prepared by nitrogen ion implantation into carbon films (a-C) deposited on Si substrates by the anodic vacuum arc. Plasma Immersion Ion Implantation (PIII) and Ion Beam (IB) implantation methods were used. X-ray Photoelectron Spectroscopy (XPS) C Is and N Is spectra of all CNX films indicate the formation of carbon-nitrogen bonds. The bonds are associated with the C 1s peaks at 286.6 eV and 285.6 eV , and the N 1s peaks at 399.1 eV and 400.6 eV. Raman spectra show that the structure of the implanted films (CNX) becomes more amorphous as the two broad peaks at 1577 cm-1 (G line) and 1350 cm-1 (D line) observed in the a-C films disappear and a broad asymmetric peak around 1500 cm-1 is formed. The interfacial tension between the a-C films and the substrate , obtained from the contact angle measurements, decreased by more than half after nitrogen implantation.

X-RAY REFLECTIVITY STUDY OF TETRAHEDRAL AMORPHOUS CARBON FILMS

2000 ◽  
Vol 14 (02n03) ◽  
pp. 181-187 ◽  
Author(s):  
B. K. Tay ◽  
X. Shi ◽  
S. P. Lau ◽  
Q. Zhang ◽  
H. C. Chua ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Amorphous Carbon ◽  
Mass Density ◽  
Ion Bombardment ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
X Ray ◽  
Tetrahedral Amorphous Carbon ◽  
Bombardment Energy

Hydrogen-free amorphous carbon films were deposited at different deposition bais voltage on a single silicon wafer by a process known as Filtered Cathodic Vacuum Arc (FCVA). The influences of different deposition bias voltages on the microstructure and the properties of thin tetrahedral amorphous carbon (ta-C) films, such as surface roughness, film mass density and thickness, have been studied by means of the x-ray reflectivity technique (XRR) for the first time. The microstructure of these films deposited on silicon wafers was stimulated by a four-layer model consisting of a ta-C layer, a mixed ta-C:Si layer, Si-O layer and the silicon subtrate. The mixed ta-C:Si layer consisting of the mixture of ta-C and silicon simulates the carbon ion impinging / diffusion into the surface of the silicon substrate. The mass density and the roughness of the film are found to be dependent on the impinging ion bombardment energy. The mass density increases with increase in ion bombardment energy up to 100 eV. Beyond 100 eV, the mass density decreases with further increase in ion bombardment energy up to 100 eV. Beyond 100 EV, the mass density decreases with further increase in ion bombardment energy. The surface roughness decreases with increasing ion bambardment energy to a minimum value at 100 eV, after which it increases with further increase in ion bombardment energy. The thickness of the films obtained by XRR technique correlates well with the thickness measurement obtained by spectral reflectometry. The existence of the Si-O layer was verified by Auger depth profiling.

Etching behaviour of pure and metal containing amorphous carbon films prepared using filtered cathodic vacuum arc technique

2002 ◽  
Vol 195 (1-4) ◽  
pp. 107-116 ◽  
Author(s):  
L.J Yu ◽  
D Sheeja ◽  
B.K Tay ◽  
Daniel H.C Chua ◽  
W.I Milne ◽  
...  
Keyword(s):  
Amorphous Carbon ◽  
Carbon Films ◽  
Vacuum Arc ◽  
Amorphous Carbon Films ◽  
Filtered Cathodic Vacuum Arc
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