Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes

1995 ◽  
Vol 395 ◽  
Author(s):  
W.E. Carlos ◽  
E.R. Glaser ◽  
T.A. Kennedy ◽  
S. Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Green Emission ◽  
Light Emitting ◽  
Magnetic Resonance Studies ◽  
Double Heterostructures ◽  
Recombination Processes ◽  
Electrically Detected Magnetic Resonance ◽  
Deep Donor ◽  
Broad Feature

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.

Electrically detected magnetic resonance of organic and polymeric light emitting diodes

2004 ◽  
Vol 338-340 ◽  
pp. 622-625 ◽  
Author(s):  
F.A. Castro ◽  
G.B. Silva ◽  
L.F. Santos ◽  
R.M. Faria ◽  
F. Nüesch ◽  
...  
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Electrically Detected Magnetic Resonance

Magnetic resonance studies of GaN based light emitting diodes

1996 ◽  
Vol 25 (5) ◽  
pp. 851-854 ◽  
Author(s):  
W. E. Caelos ◽  
E. R. Glaser ◽  
T. A. Kennedy ◽  
S. Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Magnetic Resonance Studies

Spin-Dependent Transport in GaN Light Emitting Diodes

1995 ◽  
Vol 395 ◽  
Author(s):  
M. S. Brandt ◽  
N. M. Reinacher ◽  
O. Ambacher ◽  
M. Stutzmann
Keyword(s):  
Low Temperatures ◽  
Room Temperature ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Spin Dependent Transport ◽  
Spin Resonance ◽  
Recombination Processes ◽  
Electrically Detected Magnetic Resonance ◽  
Dependent Transport ◽  
Heterostructure Devices

ABSTRACTElectrically detected magnetic resonance (EDMR) is used to study recombination processes in two types of gallium nitride light emitting diodes: in m/i/n/n+- and InGaN/AlGaN double-heterostructure devices. In the MIS-diodes, two resonances at g=1.96 and 2.00, corresponding to the effective mass donor and a deep defect are observed at room temperature. At low temperatures, an acceptor-related resonance at g=2.06 is visible as well. After current degradation, the spectra are dominated by the defect resonance, indicating that the creation of this defect is responsible for the decreased electroluminescence efficiency. In the double-heterostrucrure devices, EDMR can only be observed below 60 K showing the g=2.00 defect resonance. The same defect resonance is also observed in conventional electron spin resonance experiments under illumination (light-induced ESR).

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