Recombination processes in InxGa1−xN light-emitting diodes studied through optically detected magnetic resonance

1998 ◽  
Vol 73 (21) ◽  
pp. 3123-3125 ◽  
Author(s):  
E. R. Glaser ◽  
T. A. Kennedy ◽  
W. E. Carlos ◽  
P. P. Ruden ◽  
S. Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Recombination Processes ◽  
Optically Detected Magnetic Resonance ◽  
Optically Detected

Magnetic Resonance Studies of Recombination Processes in GaN-Based Light Emitting Diodes

1995 ◽  
Vol 395 ◽  
Author(s):  
W.E. Carlos ◽  
E.R. Glaser ◽  
T.A. Kennedy ◽  
S. Nakamura
Keyword(s):  
Magnetic Resonance ◽  
Light Emitting Diodes ◽  
Green Emission ◽  
Light Emitting ◽  
Magnetic Resonance Studies ◽  
Double Heterostructures ◽  
Recombination Processes ◽  
Electrically Detected Magnetic Resonance ◽  
Deep Donor ◽  
Broad Feature

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.

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