Magnetic resonance studies of GaN based light emitting diodes

1996 ◽  
Vol 25 (5) ◽  
pp. 851-854 ◽  
Author(s):  
W. E. Caelos ◽  
E. R. Glaser ◽  
T. A. Kennedy ◽  
S. Nakamura
1995 ◽  
Vol 395 ◽  
Author(s):  
W.E. Carlos ◽  
E.R. Glaser ◽  
T.A. Kennedy ◽  
S. Nakamura

ABSTRACTMagnetic resonance techniques are used to study the recombination processes in GaN-based light emitting diodes (LEDs). Electrically-detected magnetic resonance (EDMR) and electroluminescence-detected magnetic resonance (ELDMR) results on InGaN/AlGaN double heterostructures are presented for blue and green LEDs. In either technique our signals are dominated by a broad feature that we ascribe to a deep Zn-related acceptor. Our ELDMR measurements show that this is associated with the blue or green emission. Our EDMR measurements resolve a second center that is tentatively identified as a deep donor trap.


1992 ◽  
Vol 46 (23) ◽  
pp. 15072-15077 ◽  
Author(s):  
L. S. Swanson ◽  
J. Shinar ◽  
A. R. Brown ◽  
D. D. C Bradley ◽  
R. H. Friend ◽  
...  

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