scholarly journals Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

1995 ◽  
Vol 391 ◽  
Author(s):  
Choong-Un Kim ◽  
S. H. Kang ◽  
F.Y. Génin ◽  
J. W. Morris
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Grain Growth ◽  
Annealing Time ◽  
Grain Refiner ◽  
Rate Of Evolution ◽  
Failure Statistics ◽  
Al Thin Film ◽  
Kinetics Of

AbstractIn order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc were tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

scholarly journals Deposition of Al Thin Film on Steel Substrate: The Role of Thickness on Crystallization and Grain Growth

Metals ◽  
2018 ◽  
Vol 9 (1) ◽  
pp. 12 ◽  
Author(s):  
Hayk Khachatryan ◽  
Sung-Nam Lee ◽  
Kyoung-Bo Kim ◽  
Moojin Kim
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Film Thickness ◽  
Grain Growth ◽  
Growth Process ◽  
Film Growth ◽  
Specular Reflection ◽  
Steel Substrate ◽  
Al Thin Film

In this study, we deposited aluminum (Al) films of different thicknesses on steel substrate and examined their phase, microstructure, and film growth process. We estimated that films of up to 30 nm thickness were mainly amorphous in nature. When the film thickness exceeded 30 nm, crystallization was observed. The further increase in film thickness triggered grain growth, and the formation of grains up to 40 nm occurred. In such cases, the Al film had a cross-grained structure with well-developed primary grains networks that were filled with small secondary grains. We demonstrated that the microstructure played a key role in optical properties. The films below 30 nm showed higher specular reflection, whereas thicker films showed higher diffuse reflections.

Iridium Silicides Formed by RTA in Vacuum

1995 ◽  
Vol 402 ◽  
Author(s):  
T. Rodríguez ◽  
A. Almendra ◽  
M. Botella ◽  
M. F. Da Silva ◽  
J. C. Soares ◽  
...  
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Growth Rate ◽  
Annealing Time ◽  
Phase Evolution ◽  
Processing Temperature ◽  
Thin Film Sample ◽  
Film Sample ◽  
Kinetics Of ◽  
Different Thickness

AbstractThe growth kinetics of the iridium silicides, IrSi and IrSi1.75 formed by RTA in vacuum has been characterized as a function of the processing temperature, up to 675°C, and annealing time for iridium films of different thickness. The sample temperature was measured using as a reference the SPE growth rate of amorphized silicon processed in the same RTA conditions. The samples were characterized by RBS, HREM, XRD and microdiffraction. RBS spectra show that the transition region between IrSi and IrSi1.75 is slightly gradual, while the interface between the IrSi and the iridium metal is sharp. The layer thickness of each silicide as a function of temperature and time was obtained from the RBS spectra. The activation energy of the diffusion coeficient of Si in IrSi and IrSi1.75 are about 1.3 eV and 3.9 eV respectively. Phase kinetics are the same for both thin and thick samples processed at the same temperature and annealing time when unreacted iridium remains in the film. However, the phase evolution is different when the annealing time is long enough to convert all the iridium metal into silicide in the thin film sample but not in the thick one. In this case, IrSil.75 is the only phase found if the annealing time is long enough. Silicides formed at 525°C consist mainly of polycrystalline IrSi, with grain size between 3 and 10 nm, and some isolated grains of IrSi 1.75. The interface between the IrSi and the Si is flat, very sharp, and well oriented grains grow from it. In order to avoid the IrSi1 75 formation and to obtain IrSi layers at reasonable rates, an RTA process at 500°C is proposed.

Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

scholarly journals Transformation kinetics of vapor-deposited thin film organic glasses: the role of stability and molecular packing anisotropy

2015 ◽  
Vol 17 (46) ◽  
pp. 31195-31201 ◽  
Author(s):  
Cristian Rodríguez-Tinoco ◽  
Marta Gonzalez-Silveira ◽  
Joan Ràfols-Ribé ◽  
Aitor F. Lopeandía ◽  
Javier Rodríguez-Viejo
Keyword(s):  
Thin Film ◽  
Thermodynamic Stability ◽  
Growth Front ◽  
Molecular Packing ◽  
Front Velocity ◽  
Transformation Kinetics ◽  
Organic Glasses ◽  
Kinetics Of ◽  
Deposition Conditions

The growth front velocity of indomethacin glasses depends on deposition conditions but is not unambigously determined by its thermodynamic stability when the structure is not completely isotropic.

Effect of the Intercalation of the Carbon Layer on the Kinetics of Grain Growth of FePt Magnetic Thin Film during Ordering Reaction - A Monte Carlo Simulation Study

2007 ◽  
Vol 558-559 ◽  
pp. 1237-1242
Author(s):  
M.C. Kim ◽  
D.A. Kim ◽  
Joong Kuen Park
Keyword(s):  
Thin Film ◽  
Monte Carlo Simulation ◽  
Grain Size ◽  
Monte Carlo ◽  
Grain Growth ◽  
Carbon Layer ◽  
Carbon Addition ◽  
Monte Carlo Simulation Study ◽  
Ordering Kinetics ◽  
Kinetics Of

The effect of carbon addition on the grain growth and ordering kinetics of FePt film has been experimentally studied by sputter-depositing a monolithic FePt-20at.%C film of 24 nm. Carbon addition of 20at.% to FePt thin film in a form of FePt (20 nm)/Cn (4 nm) (n = 1, 4) significantly reduced both the grain growth and ordering kinetics. Reducing the thickness of carbon layer, i.e. from n = 1 to n = 4, led to a much finer grain size distribution as well as to a finer grain size. The Monte Carlo simulation study indicated that the decrease of grain growth and ordering kinetics is primarily due to a continuous decrease of the mobility of order – disorder inter-phase with the progress of ordering reaction. This can eventually lead to a stable 2-phase grain structure inter-locked by low mobility inter-phases and is responsible for the formation of a fine grain size distribution in the FePt/Cn film with n = 4.

RHEED Intensity Oscillation Studies of the Kinetics of GaAs Deposition During Chemical Beam Epitaxy(CBE)

1987 ◽  
Vol 102 ◽  
Author(s):  
A. Robertson ◽  
T.H. Chiu ◽  
W.T. Tsang ◽  
J.E. Cunningham
Keyword(s):  
Growth Rate ◽  
Arrival Rate ◽  
Maximum Growth ◽  
Growth Front ◽  
Propagation Mechanism ◽  
Chemical Beam Epitaxy ◽  
Group V ◽  
Partially Saturated ◽  
Kinetics Of

ABSTRACTRecently we have reported the measurement of RHEED intensity oscillations during Chemical Beam Epitaxy(CBE) of GaAs using triethylgallium(TEG) and As2 derived from an arsine cracker(Appl. Phys. Lett. 50(19), May 11,1987). The existence of RHEED intensity oscillations during CBE growth of GaAs indicates that over the range of conditions studied, growth proceeds via nucleation of islands which grow two-dimensionally as opposed to a vicinal step propagation mechanism. In the same study we observed a significant variation of the GaAs growth rate with substrate temperature at constant flux. In addition, the variation of growth rate with incident flux at constant temperature was found to be non-linear below approximately 500°C and linear above 500'C for incident fluxes yielding maximum growth rates between.2 and 1.8 monolayers/sec. Additional measurements of the dependence of the damping of RHEED intensity oscillations on V/11 ratio have indicated much less sensitivity of the growth front morphology to group V flux in CBE. This behavior is thought to reflect the role of highly mobile, partially saturated ethyl-gallium radicals in epitaxial growth by CBE. Measurements of As2 arrival rate limited intensity oscillations on gallium rich surfaces prepared by pyrolyzing TEG in the absence of As2 have shown that the pyrolysis of TEG is not self-limiting at 500°C and that excess gallium can be deposited on gallium rich surfaces. This paper also describes a simple model of the surface pyrolysis of TEG which is consistent with the above experimental observation.

Study on the Crystallization Kinetics of Polymer Thin Films

2012 ◽  
Vol 466-467 ◽  
pp. 102-105
Author(s):  
Yi Jin Ren
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Film Thickness ◽  
Crystallization Kinetics ◽  
Crystallization Time ◽  
Crystal Thickness ◽  
Polymer Thin Film ◽  
Crystal Growth Mechanism ◽  
The Relationship ◽  
Kinetics Of

The crystallization kinetics of polymer thin film has a great difference from that in the bulk. Generally, the growth rate of the crystal confined in thin film reduces with decreasing film thickness, which is believed that the interaction between chains and substrate is responsible for the decrease of the growth rate. In addition, the ratio of film thickness over crystal thickness is also a key parameter in determining the growth rate. The relationship between the crystal lateral size and the crystallization time also dominates the crystal growth mechanism in polymer thin film.

Oxidation of dilute Al-Mg foils in an O2-atmosphere as revealed by TEM

1978 ◽  
Vol 36 (1) ◽  
pp. 448-449
Author(s):  
S. Kritzinger ◽  
E. Ronander
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Annealing Time ◽  
Ex Situ ◽  
Isothermal Anneal ◽  
Special Vacuum ◽  
Thin Foils ◽  
Black Spots ◽  
Almost All ◽  
Prismatic Dislocation Loop

The thin film stage oxidation of Al-Mg in O2 was studied by TEM, utilising the prismatic dislocation loop annealing technique. Thin foils were prepared conventionally from oil-quenched sheets of Al-1.5 wt % Mg and oxidised ex situ in a special vacuum system1.Generally it was found that oxidising at ∽ 170˚C and above, created a vacancy supersaturation large enough to cause prismatic loops to grow (Fig. 1). The growth rate increased with increasing O2-pressure. Even at 10-6 torr the larger loops still grew, while smaller ones shrank. Although a linear relationship between loop radius and annealing time was occasionally observed, the growth rate generally increased with time during an isothermal anneal at constant O2 partial pressure, and also varied from loop to loop. Small black spots appeared on almost all the micrographs after an annealing time of approximately half an hour and more (Fig. 2(a)).

Role of Aluminum (Al) Thin Film in the Improvement of Anti-Permeation Behavior of Fabricated Composites in Corrosive Environment

2012 ◽  
Vol 476-478 ◽  
pp. 388-391
Author(s):  
Guo Ning Liu ◽  
Hua Dong Zhao ◽  
He Zheng Wang ◽  
Xian Zhong Xu ◽  
Ming Hao Zhao
Keyword(s):  
Thin Film ◽  
Low Cost ◽  
Pure Aluminum ◽  
Corrosion Property ◽  
High Porosity ◽  
Corrosive Environment ◽  
Porosity Ratio ◽  
Al Thin Film ◽  
Processing Techniques

Though composites, particularly those consisting of organic materials, have replaced the role of traditional metallic materials in various engineering applications due to their relatively high mechanical strength, low density, flexibility and low cost, their disadvantages caused by relatively high porosity ratio and low crystallinity inherently make this kind of materials the less favorable choices when low permeation property is a major criterion. Here pure aluminum (Al) thin film, which has excellent anti-corrosion property, is introduced into the structure of fabricated composites to improve the composite’s anti-permeation behavior in corrosive environment while the advantageous points of organic composites are exploited at the same time by applying the optimized thermo-mechanical processing techniques in fabrication. Thus greater potentials for organic polymeric composites may be achieved in the future.

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