Understanding the Role of Vanadium in Enhancing the Low-Temperature Hydrogenation Kinetics of an Mg Thin Film

2013 ◽  
Vol 5 (15) ◽  
pp. 6968-6974 ◽  
Author(s):  
Shiyou Zheng ◽  
Zhi-Peng Li ◽  
Leonid A. Bendersky
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Hydrogenation Kinetics ◽  
Kinetics Of

Role of Surface Reconstruction and External Ion Beam in the Growth Kinetics of III-V Molecular Beam Epitaxy

1987 ◽  
Vol 94 ◽  
Author(s):  
S. B. Ogale ◽  
M. Thomsen ◽  
A. Madhukar
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Surface Reconstruction ◽  
Molecular Beam ◽  
Ion Beam ◽  
Growth Front ◽  
Kinetic Rates ◽  
Kinetics Of ◽  
Low Temperature Epitaxy

ABSTRACTComputer simulations of III-V molecular beam epitaxy (MBE) show that surface reconstruction induced modulation of kinetic rates could give rise to ordering in alloys. Results are also presented for the possible influence of an external ion beam in achieving low temperature epitaxy as well as smoother growth front under usual conditions.

scholarly journals Transformation kinetics of vapor-deposited thin film organic glasses: the role of stability and molecular packing anisotropy

2015 ◽  
Vol 17 (46) ◽  
pp. 31195-31201 ◽  
Author(s):  
Cristian Rodríguez-Tinoco ◽  
Marta Gonzalez-Silveira ◽  
Joan Ràfols-Ribé ◽  
Aitor F. Lopeandía ◽  
Javier Rodríguez-Viejo
Keyword(s):  
Thin Film ◽  
Thermodynamic Stability ◽  
Growth Front ◽  
Molecular Packing ◽  
Front Velocity ◽  
Transformation Kinetics ◽  
Organic Glasses ◽  
Kinetics Of ◽  
Deposition Conditions

The growth front velocity of indomethacin glasses depends on deposition conditions but is not unambigously determined by its thermodynamic stability when the structure is not completely isotropic.

scholarly journals Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

1995 ◽  
Vol 391 ◽  
Author(s):  
Choong-Un Kim ◽  
S. H. Kang ◽  
F.Y. Génin ◽  
J. W. Morris
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Grain Growth ◽  
Annealing Time ◽  
Grain Refiner ◽  
Rate Of Evolution ◽  
Failure Statistics ◽  
Al Thin Film ◽  
Kinetics Of

AbstractIn order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc were tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

Kinetics of low-temperature methane activation on IrO2(1 1 0): Role of local surface hydroxide species

2020 ◽  
Vol 383 ◽  
pp. 181-192 ◽  
Author(s):  
Minkyu Kim ◽  
Austin D. Franklin ◽  
Rachel Martin ◽  
Yingxue Bian ◽  
Jason F. Weaver ◽  
...  
Keyword(s):  
Low Temperature ◽  
Methane Activation ◽  
Local Surface ◽  
Kinetics Of

scholarly journals Role of the electronically-active amorphous state in low-temperature processed In2O3 thin-film transistors

2020 ◽  
Vol 1 (2) ◽  
pp. 167-176 ◽  
Author(s):  
Ahmad R. Kirmani ◽  
Emily F. Roe ◽  
Christopher M. Stafford ◽  
Lee J. Richter
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
Sol Gel ◽  
Amorphous State ◽  
X Ray ◽  
X Ray Scattering ◽  
Process Structure

Process-structure-transport relationships in low-temperature-processed, blade-coated In2O3 transistors using sol–gel and combustion chemistries are explored with X-ray scattering techniques. Electron mobility of ≈4.5 cm2 V−1 s−1 is achieved at ≈220 °C.

scholarly journals Heterojunction solar cells

1980 ◽  
Vol 295 (1414) ◽  
pp. 445-451
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Low Temperature ◽  
Surface Passivation ◽  
Qualitative Description ◽  
Economic Potential ◽  
Heterojunction Solar Cells ◽  
Highly Efficient ◽  
Conductivity Type

This paper gives a qualitative description of semiconductor-semiconductor heterojunction solar cells. The two groups of heterojunctions of greatest economic potential, very highly efficient cells for concentrator applications and moderately efficient thin film cells for fiat plates, are described with examples. These examples illustrate the role of heterojunctions in surface passivation, monolithic multijunction devices, devices with semiconductors of only one conductivity type and low-temperature fabrication techniques.

Linear growth of Ni2Si thin film on n+/p junction at low temperature

2006 ◽  
Vol 21 (12) ◽  
pp. 3017-3021 ◽  
Author(s):  
Yu-Long Jiang ◽  
Guo-Ping Ru ◽  
Xin-Ping Qu ◽  
Bing-Zong Li ◽  
Christophe Detavernier ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Integrated Circuits ◽  
Linear Growth ◽  
Annealing Temperature ◽  
Rapid Thermal Process ◽  
Lower Annealing Temperature ◽  
Kinetics Of ◽  
Contact Electrodes ◽  
Si Thin Film

Nickel mono-silicide has been considered a promising silicide candidate for sub-90 nm nodes of integrated circuits manufacturing. To form high-quality nickel mono-silicide as source/drain contact electrodes, a two-step low temperature rapid thermal process has been proposed, in which the as-deposited Ni will react with silicon during a low temperature (<310 °C) first anneal. Due to the lower annealing temperature Ni2Si will form after the first anneal. To better control the silicidation process the growth kinetics of Ni2Si thin film fabricated by solid-state reaction of sputtered Ni thin film on n+/p junction at low temperature is investigated in this paper. It is demonstrated that between 260 and 280 °C the thickness of Ni2Si thin film has a linear rather than parabolic dependence on annealing time. The corresponding activation energy for this linear growth is found to be ∼1.35 eV.

Dual role of boron in improving electrical performance and device stability of low temperature solution processed ZnO thin film transistors

2015 ◽  
Vol 107 (15) ◽  
pp. 152102 ◽  
Author(s):  
Srinivas Gandla ◽  
Sankara Rao Gollu ◽  
Ramakant Sharma ◽  
Venkateshwarlu Sarangi ◽  
Dipti Gupta
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Dual Role ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Solution Processed ◽  
Device Stability ◽  
Temperature Solution
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