Oxidation of dilute Al-Mg foils in an O2-atmosphere as revealed by TEM

1978 ◽  
Vol 36 (1) ◽  
pp. 448-449
Author(s):  
S. Kritzinger ◽  
E. Ronander
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Annealing Time ◽  
Ex Situ ◽  
Isothermal Anneal ◽  
Special Vacuum ◽  
Thin Foils ◽  
Black Spots ◽  
Almost All ◽  
Prismatic Dislocation Loop

The thin film stage oxidation of Al-Mg in O2 was studied by TEM, utilising the prismatic dislocation loop annealing technique. Thin foils were prepared conventionally from oil-quenched sheets of Al-1.5 wt % Mg and oxidised ex situ in a special vacuum system1.Generally it was found that oxidising at ∽ 170˚C and above, created a vacancy supersaturation large enough to cause prismatic loops to grow (Fig. 1). The growth rate increased with increasing O2-pressure. Even at 10-6 torr the larger loops still grew, while smaller ones shrank. Although a linear relationship between loop radius and annealing time was occasionally observed, the growth rate generally increased with time during an isothermal anneal at constant O2 partial pressure, and also varied from loop to loop. Small black spots appeared on almost all the micrographs after an annealing time of approximately half an hour and more (Fig. 2(a)).

scholarly journals Mechanism of Electromigration Failure in Al Thin Film Interconnects Containing Sc

1995 ◽  
Vol 391 ◽  
Author(s):  
Choong-Un Kim ◽  
S. H. Kang ◽  
F.Y. Génin ◽  
J. W. Morris
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Grain Growth ◽  
Annealing Time ◽  
Grain Refiner ◽  
Rate Of Evolution ◽  
Failure Statistics ◽  
Al Thin Film ◽  
Kinetics Of

AbstractIn order to understand the role of Sc on electromigration (EM) failure, Al interconnects with 0.1 and 0.3 wt.% Sc were tested as a function of post-pattern annealing time. In response to the evolution of the line structure, the statistics of lifetime evolved. While the addition of Sc greatly reduces the rate of evolution of the failure statistics because the grain growth rate decreases, the MTF variation was found to be very similar to that of pure Al. These observations seem to show that Sc has little influence on the kinetics of Al EM; however, it has some influence on the EM resistance of the line since it is an efficient grain refiner. Unlike Cu in Al, Sc does not seem to migrate, which may explain its lack of influence on the kinetics of Al EM.

Iridium Silicides Formed by RTA in Vacuum

1995 ◽  
Vol 402 ◽  
Author(s):  
T. Rodríguez ◽  
A. Almendra ◽  
M. Botella ◽  
M. F. Da Silva ◽  
J. C. Soares ◽  
...  
Keyword(s):  
Thin Film ◽  
Activation Energy ◽  
Growth Rate ◽  
Annealing Time ◽  
Phase Evolution ◽  
Processing Temperature ◽  
Thin Film Sample ◽  
Film Sample ◽  
Kinetics Of ◽  
Different Thickness

AbstractThe growth kinetics of the iridium silicides, IrSi and IrSi1.75 formed by RTA in vacuum has been characterized as a function of the processing temperature, up to 675°C, and annealing time for iridium films of different thickness. The sample temperature was measured using as a reference the SPE growth rate of amorphized silicon processed in the same RTA conditions. The samples were characterized by RBS, HREM, XRD and microdiffraction. RBS spectra show that the transition region between IrSi and IrSi1.75 is slightly gradual, while the interface between the IrSi and the iridium metal is sharp. The layer thickness of each silicide as a function of temperature and time was obtained from the RBS spectra. The activation energy of the diffusion coeficient of Si in IrSi and IrSi1.75 are about 1.3 eV and 3.9 eV respectively. Phase kinetics are the same for both thin and thick samples processed at the same temperature and annealing time when unreacted iridium remains in the film. However, the phase evolution is different when the annealing time is long enough to convert all the iridium metal into silicide in the thin film sample but not in the thick one. In this case, IrSil.75 is the only phase found if the annealing time is long enough. Silicides formed at 525°C consist mainly of polycrystalline IrSi, with grain size between 3 and 10 nm, and some isolated grains of IrSi 1.75. The interface between the IrSi and the Si is flat, very sharp, and well oriented grains grow from it. In order to avoid the IrSi1 75 formation and to obtain IrSi layers at reasonable rates, an RTA process at 500°C is proposed.

Diffraction effects from inclined grain boundaries in polycrystalline thin foils

1978 ◽  
Vol 36 (1) ◽  
pp. 420-421
Author(s):  
C.B. Carter ◽  
A.M. Donald ◽  
S.L. Sass
Keyword(s):  
Thin Film ◽  
Grain Boundaries ◽  
Boundary Plane ◽  
Foil Surface ◽  
Thin Foils ◽  
The Matrix ◽  
Firm Basis ◽  
Diffraction Patterns ◽  
Wave Matching ◽  
Diffraction Effects

Using thin-film gold bicrystals with the boundary plane parallel to the foil surface, it has been shown(l,2) that networks of grain boundary dislocations can act as diffraction gratings and give rise to subsidiary reflections close to the matrix reflections in electron diffraction patterns. Recently several groups of workers(3-5) have shown that inclined boundaries in polycrystalline specimens also produce extra reflections which may be due to the periodic nature of the boundaries. In general grain boundaries in polycrystalline specimens will be steeply inclined to the foil surface and additional reflections due to wave matching at the boundary(6) will also be present. The diffraction technique has the potential for providing detailed information on the structure of inclined boundaries (see, for example (5)), especially for the case where the image contains no useful information. In order to provide a firm basis for this technique, the geometry of the diffraction effects expected from inclined boundaries and the influence of these effects on the appearance of images will be examined.

The use of transmission and analytical electron microscopy in studying reactions and phase transformations in thin film

1993 ◽  
Vol 51 ◽  
pp. 842-843
Author(s):  
K. Barmak
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Transformations ◽  
Analytical Electron Microscopy ◽  
Ex Situ ◽  
Multilayer Thin Films ◽  
Absolute Concentration ◽  
Analytical Electron ◽  
Deposition Step

Generally, processing of thin films involves several annealing steps in addition to the deposition step. During the annealing steps, diffusion, transformations and reactions take place. In this paper, examples of the use of TEM and AEM for ex situ and in situ studies of reactions and phase transformations in thin films will be presented.The ex situ studies were carried out on Nb/Al multilayer thin films annealed to different stages of reaction. Figure 1 shows a multilayer with dNb = 383 and dAl = 117 nm annealed at 750°C for 4 hours. As can be seen in the micrograph, there are four phases, Nb/Nb3-xAl/Nb2-xAl/NbAl3, present in the film at this stage of the reaction. The composition of each of the four regions marked 1-4 was obtained by EDX analysis. The absolute concentration in each region could not be determined due to the lack of thickness and geometry parameters that were required to make the necessary absorption and fluorescence corrections.

Growth mechanism of NPD crystal from amorphous thin film by observation of morphology and measuring growth rate

2020 ◽  
Vol 59 (SN) ◽  
pp. SN1015
Author(s):  
Hideyuki Kanehara ◽  
Yuki Araki ◽  
Hiroyasu Katsuno ◽  
Toshitaka Nakada
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
Growth Mechanism ◽  
Amorphous Thin Film

Preparation and Growth of Pb2Sr2Y0.5Ca0.5Cu3O8+δ Thin Film Superconductors

1992 ◽  
Vol 285 ◽  
Author(s):  
S.H.H. Naqvi ◽  
M. Vickers ◽  
S. Tarling ◽  
P. Barnes ◽  
I.W. Boyd
Keyword(s):  
Thin Film ◽  
Pulsed Laser ◽  
Growth Conditions ◽  
Laser Deposition ◽  
Ex Situ ◽  
Dc Resistivity ◽  
Basic Set ◽  
Zero Resistance ◽  
Van Der Pauw ◽  
First Time

ABSTRACTThe lead based superconductor Pb2Sr2Y0.5Ca0.5Cu3O8+δ is a most complex material. If any oxygen is present in the PbO-CuOδ-PbO sandwich layer (i.e. if δ>0) the superconductivity deteriorates. This is also a most difficult material to grow not only because of the large number of cation stoichiometries which have to be precisely balanced but also because of the tendency for multiple phases to form. Pulsed laser deposition (PLD) has been applied to prepare thin films of the 2213-phase on MgO (100) single crystal substrates at low temperature (300°C) in low oxidizing atmospheres. A basic set of ex-situ growth conditions has been determined which produce for the first time good quality films of this material as characterized by DC resistivity using the Van der Pauw method, as well as EDX and XRD. The layers are reasonably c-axis oriented and display a superconducting onset transition temperature of 79K and zero resistance at 65K after subsequent annealing in a nitrogen ambient.

scholarly journals Microstructure Evolution of Ag/TiO2 Thin Film

2021 ◽  
Vol 7 (1) ◽  
pp. 14
Author(s):  
Dewi Suriyani Che Halin ◽  
Kamrosni Abdul Razak ◽  
Mohd Arif Anuar Mohd Salleh ◽  
Mohd Izrul Izwan Ramli ◽  
Mohd Mustafa Al Bakri Abdullah ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Growth Rate ◽  
Synchrotron Radiation ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Tio2 Thin Films ◽  
Contact Mode ◽  
X Ray ◽  
Radiation Imaging

Ag/TiO2 thin films were prepared using the sol-gel spin coating method. The microstructural growth behaviors of the prepared Ag/TiO2 thin films were elucidated using real-time synchrotron radiation imaging, its structure was determined using grazing incidence X-ray diffraction (GIXRD), its morphology was imaged using the field emission scanning electron microscopy (FESEM), and its surface topography was examined using the atomic force microscope (AFM) in contact mode. The cubical shape was detected and identified as Ag, while the anatase, TiO2 thin film resembled a porous ring-like structure. It was found that each ring that coalesced and formed channels occurred at a low annealing temperature of 280 °C. The energy dispersive X-ray (EDX) result revealed a small amount of Ag presence in the Ag/TiO2 thin films. From the in-situ synchrotron radiation imaging, it was observed that as the annealing time increased, the growth of Ag/TiO2 also increased in terms of area and the number of junctions. The growth rate of Ag/TiO2 at 600 s was 47.26 µm2/s, and after 1200 s it decreased to 11.50 µm2/s and 11.55 µm2/s at 1800 s. Prolonged annealing will further decrease the growth rate to 5.94 µm2/s, 4.12 µm2/s and 4.86 µm2/s at 2400 s, 3000 s and 3600 s, respectively.

Detection of oomycide-insensitive Phytophthora isolates in Maryland ornamental nurseries and Mid-Atlantic landscapes provide data for reconsidering management strategies

2021 ◽  
Author(s):  
Justine Beaulieu ◽  
Johanna Del Castillo Munera ◽  
Yilmaz Balci
Keyword(s):  
Growth Rate ◽  
Mycelial Growth ◽  
Management Strategies ◽  
Resistance Management ◽  
Phytophthora Species ◽  
Oak Forests ◽  
Relative Growth ◽  
Off Label ◽  
Potting Media ◽  
Almost All

Five Phytophthora species comprising a total of 243 isolates (77 P. cinnamomi, 23 P. citrophthora, 18 P. multivora, 18 P. pini, and 107 P. plurivora) were screened for sensitivity to mefenoxam, fosetyl-Al, dimethomorph, dimethomorph + ametoctradin and fluoxastrobin using amended agar assays. Mefenoxam-insensitive isolates were detected within P. cinnamomi (4%), P. multivora (11%), and P. plurivora (12%) even at approximately 2.5x the recommended label rate. These isolates were also insensitive to higher (off-label) concentrations of fluoxastrobin. Concentrations of dimethomorph (400 g/mL) and dimethomorph + ametoctradin (100 g/mL) were mostly effective in mycelial growth inhibition, but two P. plurivora isolates were insensitive, suggesting that resistance management is required. All mefenoxam-insensitive isolates were sensitive to fosetyl-Al at the label rate. Surprisingly, the populations of P. cinnamomi from mid-Atlantic oak forests included insensitive isolates. With almost all species, isolates recovered from asymptomatic hosts (e.g., soil/potting media collected of randomly selected asymptomatic hosts) had a significantly greater relative growth rate when compared to isolates recovered from symptomatic hosts (e.g., isolates recovered from lesions or wilted plants). These findings suggest that mefenoxam should no longer be used to manage oomycetes in Maryland ornamental nurseries and that the use of fluoxastrobin should be limited.

High growth-rate atomic layer deposition process of cerium oxide thin film for solid oxide fuel cell

2019 ◽  
Vol 45 (3) ◽  
pp. 3811-3815 ◽  
Author(s):  
Jin-Geun Yu ◽  
Byung Chan Yang ◽  
Jeong Woo Shin ◽  
Sungje Lee ◽  
Seongkook Oh ◽  
...  
Keyword(s):  
Thin Film ◽  
Growth Rate ◽  
High Growth ◽  
Atomic Layer ◽  
Deposition Process ◽  
High Growth Rate ◽  
Solid Oxide ◽  
Oxide Thin Film ◽  
Oxide Fuel ◽  
Layer Deposition
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