Low Temperature Selective Silicon Epitaxy Using Si2H6, H2 and Cl2 in Ultra High Vacuum Rapid Thermal Chemical Vapor Deposition

1995 ◽  
Vol 387 ◽  
Author(s):  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Patricia A. O'Neill ◽  
Kim Christensen ◽  
Dennis M. Maher
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
High Vacuum ◽  
Chemical Vapor ◽  
High Growth ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Epitaxy ◽  
Low Pressures ◽  
Wafer Manufacturing

In this paper we present for the first time the use of the Si2H6/H2/Cl2 chemistry for selective silicon epitaxy in a rapid thermal CVD reactor. Depositions were carried out in an ultra-high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) system designed and constructed at North Carolina State University. Experiments were performed over a temperature range of 650°C to 850°C and over a pressure range of 22 to 25 mTorr using a flow rate 100 sccm of 10% Si2H6 in H2 and 0 to 10 sccm of Cl2. Deposited layer thicknesses were evaluated using a combination of interferometry and profilometry. Without Cl2 over the range of 650°C to 850°C, the growth rate is approximately constant at 160 nm/min. exhibiting a weak dependence on temperature. A clear advantage of Si2H6 is that high growth rates compatible with single wafer manufacturing can be obtained at very low pressures thus minimizing the introduction of contaminants by the process gases. With the addition of C12, the growth rate is suppressed at temperatures below 800°C, but, at 800°C and above, it is affected only slightly for Cl2 flow rates below 5 sccm. As the Cl2 flow rate is increased past 5 sccm, the growth rate at higher temperatures becomes a strong function of Si2H6:Cl2 ratio. Excellent selectivity with respect to patterned SiO2 and Si3N4 was obtained over the entire Cl2 flow rate range suggesting that even lower Cl levels may be sufficient for selective deposition. This implies that selectivity can be obtained with Si:Cl ratios much lower than those introduced by the more commonly used SiH2Cl2 chemistry. Furthermore, because Si2H6 can provide high growth rates at very low pressures, the total partial pressures of Cl2 and resulting chlorinated species can be significantly lower than typically required for selectivity. Our results indicate that C12 successfully enhances selectivity and yields highly selective depositions for process durations well within the practical limits of single wafer manufacturing.

Low temperature selective silicon epitaxy by ultra high vacuum rapid thermal chemical vapor deposition using Si2H6, H2 and Cl2

1996 ◽  
Vol 68 (1) ◽  
pp. 66-68 ◽  
Author(s):  
Katherine E. Violette ◽  
Patricia A. O’Neil ◽  
Mehmet C. Öztürk ◽  
Kim Christensen ◽  
Dennis M. Maher
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition ◽  
Silicon Epitaxy

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

2016 ◽  
Vol 444 ◽  
pp. 21-27 ◽  
Author(s):  
Ramsey Hazbun ◽  
John Hart ◽  
Ryan Hickey ◽  
Ayana Ghosh ◽  
Nalin Fernando ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Silicon Epitaxy

Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen

1993 ◽  
Vol 334 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Strong Dependence ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition

AbstractSilicon nucleation on silicon dioxide and selective silicon epitaxial growth (SEG) were studied in an ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. Experiments were performed using 10% Si2H6 in H2 in a pressure range of 10 - 100 mTorr at 760°C. Under these conditions, the growth rate ranged from 75 to 330 nm/minute. Loss of selectivity via Si island formation on SiO2 was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealing a strong dependence on deposition pressure. Cross sectional transmission electron microscopy (XTEM) was employed to study the vertical oxide/epitaxy interface where faceting can occur. The incubation time for nucleation was found to increase from 10s to 70s as pressure is reduced from 100 mTorr to 10 mTorr, allowing thicker selective epitaxial film growth in spite of the reduced growth rates. This was attributed to the reduction in gas phase supersaturation of the Si containing species resulting in a lower density of adsorbed atoms on the SiO2 surface. This process shows a potential for chlorine free selective epitaxial growth and provides insight to the surface morphology of polycrystalline films deposited at low pressures.

High Quality Silicon Epitaxy In An Ultra High Vacuum Rapid Thermal Cvd Reactor: An Application to Single Wafer Processing

1993 ◽  
Vol 303 ◽  
Author(s):  
Mahesh K. Sanganeria ◽  
Katherine E. Violetite ◽  
Mehmet C. ÖztÜrk
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
High Throughput ◽  
Strong Dependence ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Main Process ◽  
Silicon Epitaxy ◽  
Wafer Processing

ABSTRACTIn this paper, we report epitaxial growth of silicon in an ultra high vacuum rapid thermal chemical vapor deposition (UHV/RTCVD) equipment. In this study, our objectives were low temperature/low thermal budget processing and a high throughput compatible with single wafer manufacturing. The reactor consists of a load lock, a main process chamber and an intermediate cryopumped vacuum buffer chamber between the two chambers. An ultra-clean process environment was achieved using oil free pumps and point of use gas purifiers. The wafer is heated by a Peak Systems LXU-35 arc lamp through a quartz window. In this system, we achieved good quality silicon epitaxy at low temperature (T≤800°C) in the very low, 100 mTorr, pressure regime with high throughput (Growth rate>0.25 μm/min.). High growth rate was achieved using Si2H6 as the reactant gas instead of SiH4 or SiH2C12 which are more commonly used gases for epitaxial growth. High temperature in-situ cleaning was completely eliminated by initiating film growth on a hydrogen passivated surface obtained via dilute HF etching. Generation lifetimes in the 200-400μs range were measured for deposition temperatures of 700°C, 750°C and 800°C with no strong dependence on the deposition temperature.

N-Channel Mos Transistors below 0.5 μm with Ultra-Shallow Channels formed by Low Temperature Selective Silicon Epitaxy

1995 ◽  
Vol 387 ◽  
Author(s):  
P. L. Huang ◽  
K. Seastrand ◽  
K. E. Violette ◽  
J. Wolf ◽  
M. C. Öztürk
Keyword(s):  
Low Temperature ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Deep Submicron ◽  
Ultra High Vacuum ◽  
Doping Profile ◽  
Doping Density ◽  
Silicon Epitaxy ◽  
Threshold Voltages ◽  
Channel Lengths

AbstractIn this paper, we present an application of ultra high Vacuum Rapid Thermal Chemical Vapor Deposition (UHV-RTCVD) to MOSFET channel engineering. MOSFETs were fabricated on ultra-thin (200 Å), moderately doped (l×1017 - 6×1018 cm−3) p-type epitaxial layers selectively grown in active areas defined by standard LOCOS isolation. The selective epitaxy was achieved using a novel Si2H6Cl2/B2H6 process at 800°C and at a total pressure under 30 mtorr. Low thermal budget processing techniques were emphasized to minimize spread in the channel doping profile. Threshold voltages below 0.6 V were obtained. Transistors with effective channel lengths of 0.45 μm exhibit subthreshold slopes from 78 to 92 mV/decade determined by the epitaxial channel doping density. We have found that by using ultra-thin channels, expected transconductance degradation at high channel doping densities can be minimized. Furthermore, ultra-thin channels help reduce the sensitivity of the threshold voltage on substrate bias. The results show that low temperature selective silicon epitaxy can be used to form ultra-shallow channel doping profiles that can enhance the performance of MOSFETs in the deep submicron regime.

Growth of GaN on (100)Si Using a New C-H and N-H Free Single-Source Precursor

1995 ◽  
Vol 395 ◽  
Author(s):  
John Kouvetakis ◽  
Jeffrey McMurran ◽  
David B. Beach ◽  
David J. Smith
Keyword(s):  
High Vacuum ◽  
Chemical Vapor ◽  
High Growth ◽  
Ultra High Vacuum ◽  
Cross Sectional ◽  
Growth Environment ◽  
Si Substrates ◽  
Single Source Precursor ◽  
Gan On Si ◽  
First Time

ABSTRACTWe have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl2GaN3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70–500 Å per minute, the low deposition temperature of 550–700 °C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

Nucleation and Growth of Polycrystalline Silicon Films in an Ultra high Vacuum Rapid Thermal Chemical Vapor Deposition Reactor Using Disilane and Hydrogen

1994 ◽  
Vol 343 ◽  
Author(s):  
Katherine E. Violette ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Mahesh K. Sanganeria ◽  
Archie Lee ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Surface Roughness ◽  
Chemical Vapor Deposition ◽  
Surface Morphology ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Chemical Vapor Deposition Reactor ◽  
Thermal Chemical Vapor Deposition

A study of Si nucleation and deposition on SiO2 was performed using disilane and hydrogen in an ultra high vacuum rapid thermal chemical vapor deposition reactor in pressure and temperature ranges of 0.1 – 1.5 Torr and 625 – 750°C. The film analysis was carried out using scanning electron microscopy, transmission electron microscopy and atomic force microscopy. At lower pressures, an incubation time exists which leads to a retardation in film nucleation. At 750°C, the incubation time is 10s at 0.1 Torr and decreases to less than Is at 1.5 Torr. The nuclei grow and form three dimensional islands on S1O2, and as they coalesce, result in a rough surface morphology. At higher pressures, the inherent selectivity is lost resulting in a higher nucleation density and smoother surface morphology. For ˜ 2000 Å thick films, the root-mean-square surface roughness at 750ÅC ranges from 110Å at 0.1 Torr to 40Å at 1.5 Torr. Temperature also strongly influences the film structure through surface mobility and grain growth. At 1 Torr, the roughness ranges from 3Å at 625°C to 60Å at 750°C. The grain structure at 625°C/1Torr appears to be amorphous, whereas at 750°C the structure is columnar. The growth rate at 625°C/1.5 Torr is 1200 Å/min provides a surface roughness on the order of atomic dimensions which is comparable to or better than amorphous silicon deposited in LPCVD furnaces.

Chemical Vapor Deposition of Al Films From Dimethylethylamine Alane on GaAs(100)2×4 Surfaces

1996 ◽  
Vol 427 ◽  
Author(s):  
I. Karpov ◽  
J. Campbell ◽  
W. Gladfelter ◽  
A. Franciosi
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Impurity Incorporation ◽  
Dimethylethylamine Alane ◽  
Pressure Regime

AbstractChemical vapor deposition (CVD) of Al from dimethylethylamnine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500°C range. The results indicate reduced impurity incorporation at the lower deposition tenmperatures, and growth rates that are relatively temperatureindependent in the low-pressure regime examined (10−4 to 10−5 Torr). At temperatures ≥400°C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (∼150°C) the specific chemistry of the CVD process affects the film texture and preferential orientation.

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