Growth Rate of Doped and Undoped Silicon by Ultra‐High Vacuum Chemical Vapor Deposition

1991 ◽  
Vol 138 (6) ◽  
pp. 1744-1748 ◽  
Author(s):  
D. W. Greve ◽  
M. Racanelli
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum

Chemical Vapor Deposition of Al Films From Dimethylethylamine Alane on GaAs(100)2×4 Surfaces

1996 ◽  
Vol 427 ◽  
Author(s):  
I. Karpov ◽  
J. Campbell ◽  
W. Gladfelter ◽  
A. Franciosi
Keyword(s):  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Growth Rates ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Impurity Incorporation ◽  
Dimethylethylamine Alane ◽  
Pressure Regime

AbstractChemical vapor deposition (CVD) of Al from dimethylethylamnine alane on atomically clean GaAs(100)2×4 surfaces has been investigated using an ultra-high-vacuum CVD reactor. Film composition, microstructure and growth rate were examined for deposition temperatures in the 100-500°C range. The results indicate reduced impurity incorporation at the lower deposition tenmperatures, and growth rates that are relatively temperatureindependent in the low-pressure regime examined (10−4 to 10−5 Torr). At temperatures ≥400°C the microstructure of films deposited by CVD and evaporation is remarkably similar, but at the lower deposition temperatures (∼150°C) the specific chemistry of the CVD process affects the film texture and preferential orientation.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum

Water Desorption from Magnesium Oxide Films Fabricated by Chemical Vapor Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 693-696 ◽  
Author(s):  
S. Kawaguchi ◽  
K.C. Namiki ◽  
S. Ohshio ◽  
Junichi Nishino ◽  
H. Saitoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Magnesium Oxide ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Secondary Electron Emission ◽  
Film Surface ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Water Desorption ◽  
Plasma Sputtering

Magnesium oxide (MgO) films are utilized for the anti-plasma sputtering coating with excellent ability of secondary electron emission in plasma display panels (PDP). These properties are degraded by the impurities adsorbed on the film surface. Therefore, we should obtain impurity-free surface during the PDP manufacturing process. We have synthesized whisker and continuous film types of metal oxide using a chemical vapor deposition (CVD) method operated under atmosphere. In this study, a temperature programmed desorption method has been applied to detect residual species adsorbed on the surface of the present films in the ultra-high vacuum atmosphere. The amount of water adsorption was determined by this method.

scholarly journals Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

2007 ◽  
Vol 2 (3) ◽  
pp. 149-154
Author(s):  
Rui Wang ◽  
Soon Fatt Yoon ◽  
Fen Lu ◽  
Wei Jun Fan ◽  
Chong Yang Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Coupling Effect ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Sige Quantum Wells

Silicon epitaxy using tetrasilane at low temperatures in ultra-high vacuum chemical vapor deposition

2016 ◽  
Vol 444 ◽  
pp. 21-27 ◽  
Author(s):  
Ramsey Hazbun ◽  
John Hart ◽  
Ryan Hickey ◽  
Ayana Ghosh ◽  
Nalin Fernando ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Low Temperatures ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Silicon Epitaxy
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