High Rate Dry Etching of GaN, AIN and InN in ECR Cl2/CH4/H2/Ar Plasmas

1995 ◽  
Vol 380 ◽  
Author(s):  
C. B. Vartuli ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
R. J. Shul ◽  
S. P. Kilcoyne ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Microwave Power ◽  
Etch Rate ◽  
Surface Composition ◽  
Plasma Chemistry ◽  
High Rate ◽  
Rf Power ◽  
Plasma Parameters ◽  
Wide Range ◽  
Etch Rates

ABSTRACTEtch rates for binary nitrides in ECR Cl2/CH4/H2/Ar are reported as a function of temperature, rf-bias, microwave power, pressure and relative gas proportions. GaN etch rates remain relatively constant from 30 to 125 °C and then increase to a maximum of 2340 Å-min−1 at 170 °C. The AIN etch rate decreases throughout the temperature range studied with a maximum of 960 Å-min−1 at 30 °C. When CH4 is removed from the plasma chemistry, the GaN and InN etch rates are slightly lower, with less dramatic changes with temperature. The surface composition of the III–V nitrides remains unchanged over the temperatures studied. The GaN and InN rates increase significantly with rf power, and the fastest rates for all three binaries are obtained at 2 mTorr. Surface morphology is smooth for GaN over a wide range of conditions, whereas InN surfaces are more sensitive to plasma parameters.

Cl2-Based ECR Etching of InGaP, AlInP and AIGaP

1996 ◽  
Vol 421 ◽  
Author(s):  
J. Hong ◽  
J. W. Lee ◽  
S. J. Pearton ◽  
C. Santana ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Microwave Power ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
High Rate ◽  
Chamber Pressure ◽  
Rf Power ◽  
Polymer Addition ◽  
Ar Plasma ◽  
Etch Rates ◽  
Etched Surface

AbstractHigh microwave power (1000W) Electron Cyclotron Resonance (ECR) Cl2/Ar plasma produce etch rates for In0.5Ga0.5P, Al0.5In0.5P and Al0.5Ga0.5P of ˜1um/min. at low pressure (1.5mTorr), moderate rf power levels (150W) and room temperature. Addition of Cl2 into Ar makes much smoother etched surface morphology as well as increasing the etch rate. All parameters, including microwave power, chamber pressure and rf power increase the etch rate of these alloys. Especially, there is at least a minimum rf power in order to get much higher etch rate with increasing microwave power. AlGaP in Cl2/Ar discharges has lower etch rates than InGaP or AlInP, which is similar to the results based on CH4/H2/Ar plasma chemistries. The Cl2/Ar chemistry enables smooth, high-rate etching without the need for polymer addition and thus simplifies the processing.

AFM Analysis of ECR Dry-Etched Ingap, Alinp and Algap

1995 ◽  
Vol 406 ◽  
Author(s):  
F. Ren ◽  
W. S. Hobson ◽  
J. R. Lothian ◽  
J. Lopata ◽  
J. A. Caballero ◽  
...  
Keyword(s):  
Surface Morphology ◽  
Microwave Power ◽  
Binary Component ◽  
Wide Range ◽  
Afm Analysis ◽  
The Common ◽  
Etch Rates ◽  
Surface Morphologies

AbstractThe etch rates of InGaP, AlInP and AlGaP increases dramatically with microwave power in ECR BCl3- or CH4/H2-based discharges, reaching values near 1μm·min−1 at 1000W, The surface morphologies of these materials however behave much differently as the microwave power is increased. For BCl3 etching of InGaP the surface RMS roughness decreases from 36nm at 250W to 2nm at 1000W. For AlInP, there is little change in surface morphology, whereas for the common binary component of these two materials, InP, the surface becomes very rough at high powers (>60nm RMS). By contrast, the morphologies of the three ternaries remain smooth over a wide range of conditions with CH4/H2/Ar. The AFM analysis, coupled with AES enables us to understand these different responses in terms of volatility of the respective chloride, metalorganic and hydride etch products.

High-Rate Deposition of a-Si:H Films in 55 kHz Glow Discharge: Growth Mechanisms and Film Structure

1997 ◽  
Vol 467 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Aivazov ◽  
A. YU Sazonov ◽  
A. A. Popov ◽  
A. E. Berdnikov
Keyword(s):  
Optical Emission ◽  
Film Structure ◽  
Half Period ◽  
High Rate ◽  
Growth Mechanisms ◽  
Plasma Parameters ◽  
Ionic Flux ◽  
Force Microscopy ◽  
Positive Ions ◽  
Wide Range

ABSTRACTThe 55 kHz GD technique allowed the high-rate deposition of a-Si:H films (up to 30 A/s) with good electronic properties in spite of inhomogeneous structure. In this work, we investigated the growth mechanisms and the correlation between plasma parameters and film structure. The electrical parameters of discharge, the properties of plasma and of the films were investigated with using of wide range of methods (optical emission spectroscopy, mass-spectrometry, IR-spectroscopy, atomic force microscopy).The films were deposited in an industrial reactor of diode type with both non-grounded electrodes used as substrate holders. The deposition mechanism in this case includes the alternation of growth phases when the negatively charged particles reach the anode (at a moment) during the first half-period of an oscillation of electric field, and the improvement of growing surface under the influence of the bombardment by positive ions during the second half-period. It is shown that the increase of the power increases the ionic flux leading to the increase of the size of structural inhomogeneities. The pressure influences the energy of positive ions, and, therefore, the hydrogen content and its bonding form on the growing surface.

Comparison of ICl and IBr for Dry Etching of III-Nitrides

1996 ◽  
Vol 449 ◽  
Author(s):  
C. B. Vartuli ◽  
J. W. Lee ◽  
J. D. MacKenzie ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Dioxide ◽  
Microwave Power ◽  
Etch Rate ◽  
Product Formation ◽  
Bond Breaking ◽  
Weakly Bound ◽  
Preferential Loss ◽  
Etch Rates ◽  
Dry Etch

ABSTRACTICl/Ar ECR discharges provide the fastest dry etch rates reported for GaN, 1.3 µm/min. These rates are much higher than with Cl2/Ar, CH4/H2/Ar or other plasma chemistries. InN etch rates up to 1.15 µm/min and 0.7 µm/min for In0.5Ga0.5N are obtained, with selectivities up to 5 with no preferential loss of N at low rf powers and no significant residues remaining. The rates are much lower with IBr/Ar, ranging from 0.15 µm/min for GaN to 0.3 µm/min for InN. There is little dependence on microwave power for either chemistry because of the weakly bound nature of IC1 and IBr. In all cases the etch rates are limited by the initial bond breaking that must precede etch product formation and there is a good correlation between materials bond energy and etch rate. The fact that low microwave power can be employed is beneficial from the viewpoint that photoresist masks are stable under these conditions, and there is no need for use of silicon nitride or silicon dioxide. Selectivities for GaN over A1N with IC1 and IBr are still lower than with Cl2- only.

Reactive ion Etching of PbZrxTi1−xO3 and Ruo2 Tein Films

1993 ◽  
Vol 310 ◽  
Author(s):  
Dilip P. Vijay ◽  
Seshu B. Desu ◽  
Wei Pan
Keyword(s):  
Thin Films ◽  
Solid Solution ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Pressure ◽  
Limiting Factor ◽  
Rf Power ◽  
Ion Etching ◽  
Pzt Thin Films ◽  
Etch Rates

AbstractIn this work, we have identified a suitable etch gas (CCI2,F2 ) for Reactive Ion Etching (RIE) of PZT thin films on RuO2 electrodes. The etch rate and anisotropy have been studied as a function of etching conditions. The effect of gas pressure, RF power and O2 concentration on the etch rate have been determined. It was found that ion bombardment effects are primarily responsible for the etching of both PZT and RuO2 thin films. Etch rates of the order of 20-30 nm/min were obtained for PZT thin films under low gas pressure and high RF power conditions. The etch residues and the relative etch rates of the components of the PZT solid solution were determined using XPS. The results show that the etching of PbO is the limiting factor in the etch process. For RuO2 thin films, etch rates of the order of 8-10 nm/min were obtained when O2 was added to the etch gas.

Ecr Etching of GaP, GaAs, InP, and InGaAs in Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2

1996 ◽  
Vol 421 ◽  
Author(s):  
R. J. Shul ◽  
A. G. Baca ◽  
D. J. Rieger ◽  
H. Hou ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Cyclotron Resonance ◽  
Electron Cyclotron Resonance ◽  
Plasma Chemistry ◽  
Electron Cyclotron ◽  
Wide Range ◽  
Etch Rates

AbstractElectron cyclotron resonance (ECR) etching of GaP, GaAs, InP, and InGaAs are reported as a function of percent chlorine-containing gas for Cl2/Ar, Cl2/N2, BCl3/Ar, and BCl3/N2 plasma chemistries. GaAs and GaP etch rates were faster than InP and InGaAs, independent of plasma chemistry due to the low volatility of the InClx, etch products. GaAs and GaP etch rates increased as %Cl2 was increased for Cl2/Ar and Cl2/N2 plasmas. The GaAs and GaP etch rates were much slower in BCl3-based plasmas due to lower concentrations of reactive Cl, however enhanced etch rates were observed in BCl3/N2 at 75% BCl3. Smooth etched surfaces were obtained over a wide range of plasma chemistries.

Dry Etching of Sol-Gel Pzt

1998 ◽  
Vol 546 ◽  
Author(s):  
R. Zeto ◽  
B. Rod ◽  
M. Dubey ◽  
M. Ervin ◽  
J. Conrad ◽  
...  
Keyword(s):  
Lead Zirconate Titanate ◽  
Etch Rate ◽  
Sol Gel ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Milling ◽  
Ion Etching ◽  
Wide Range ◽  
Etch Rates ◽  
Argon Ion

AbstractTwo techniques for dry etching of sol-gel lead zirconate titanate (PZT 52/48) thin films were investigated: reactive ion etching and argon ion milling. Etched profiles were characterized by scanning electron microscopy. For reactive ion etching, a parallel plate etcher was used with HC2ClF4, an environmentally safe etch gas, in a process described by other researchers. Etch rates were measured and compared as a function of electrode shield material (ardel, graphite, alumina) and RF input power (100 to 500 W). These etch rates varied from 10 to 100 nm/min. Reactive ion etched sidewall angles 12° off normal were consistently produced over a wide range of RF powers and etch times, but overetching was required to produce a clean sidewall. For argon ion milling, a 300 mA/500 V beam 40° off normal to the substrate operating in a 72 mPa argon pressure was used. These ion milling conditions produced an etch rate of 250 nm/min with a sidewall slope angle of about 70°. The ion milling etch rate for sol-gel PZT was significantly faster than rates reported for bulk PZT. The 500 nm thick PZT films used in this study were prepared by the sol-gel process that used methoxyethanol solvent, spin coating on t/Ti/SiO2 silicon substrates, and rapid thermal annealing for 30 s at 650 °C for crystallization of the perovskite phase.

Relating Photoresist Etch Characteristics to Langmuir Probe Measurements in an Electron Cyclotron Resonance Source

1993 ◽  
Vol 324 ◽  
Author(s):  
K. T. Sung ◽  
W. H. Juan ◽  
S. W. Pang ◽  
M. Dahimene
Keyword(s):  
Microwave Power ◽  
Langmuir Probe ◽  
Cyclotron Resonance ◽  
Etch Rate ◽  
Electron Cyclotron Resonance ◽  
Rf Power ◽  
Ion Density ◽  
Source Distance ◽  
Langmuir Probe Measurements ◽  
Probe Measurements

AbstractIn this work, Langmuir probe measurements were used to characterize a multipolar electron cyclotron resonance (ECR) plasma source. This system has many controllable parameters including microwave power, rf power, gas, pressure, flow rate, and source distance. Both double and triple Langmuir probes were used for the plasma characterization. The results from the Langmuir probe measurements were correlated to the etch characteristics of photoresist. Ion density and photoresist etch rate were found to increase with microwave power but decrease with source distance. However, rf power does not have significant influence on ion density although the photoresist etch rate increases substantially with if power. Ion density first increases then decreases at higher pressure. Maximum ion density occurs at lower pressure for larger distance below the ECR source. Ion density uniformity for an O2 plasma is ±2% across a 16 cm diameter region at 23 cm below the source. For photoresist etched at 10 cm source distance, etch rate uniformity is ±2% for a 15 cm diameter wafer. The results from the Langmuir probe measurements indicate that photoresist etching is enhanced by ion density and ion energy.

Evaluation of Dry Etching Induced Damage of Gainas Using Transmission Lines and Schottky Diodes

1993 ◽  
Vol 324 ◽  
Author(s):  
S. Thomas ◽  
S. W. Pang
Keyword(s):  
Transmission Line ◽  
Transmission Lines ◽  
Microwave Power ◽  
Etch Rate ◽  
Schottky Diodes ◽  
Dry Etching ◽  
Rf Power ◽  
Ion Energy ◽  
Source Distance ◽  
Ecr Source

AbstractPlasma etching of GaInAs and AlInAs has been carried out in a system which consists of an electron cyclotron resonance (ECR) source and an rf-powered stage. Since the ECR source can generate a plasma with low ion energy, dry etching induced damage is expected to be minimal. In this study, Schottky diodes and transmission lines were fabricated on the etched GaInAs surface. The diode and transmission line characteristics were evaluated as a function of etch conditions. For the etching of GaInAs and AllnAs, C12 and Ar were used as the etch gases. In addition to the ratio of the two gases, microwave power, rf power, pressure, and source distance were varied and their effects on etch rate, morphology, and surface damage were analyzed. Etch rate increased monotonically with microwave power, rf power, and C12 percentage. Etch rate decreased with increasing distance and reached a maximum for a pressure of 1 mTorr. The etch conditions for the damage study were chosen to maintain smooth morphology. One of the most important factors influencing damage was the ion energy which can be limited by using low rf power and short source distance. Minimum damage was obtained at 1 mTorr which provides the optimal balance between high etch rate and low ion energy. Besides limiting ion energy, the addition of Cl2 reduced etch-induced damage. The specific contact resistivity and sheet resistivity obtained from transmission line measurements of dryetched n-GaInAs were lower than the wet-etched samples. Schottky diode analysis show reduction in barrier height and breakdown voltage after Ar sputtering. Addition of 10% C12 is sufficient for full recovery of the diode characteristics.

Reactive Ion Etching of Boron Nitride and Gallium Nitride Materials in C12/Ar and BCl3/Cl2/Ar Chemistries

1998 ◽  
Vol 512 ◽  
Author(s):  
N. Medelci ◽  
A. Tempez ◽  
E. Kim ◽  
N. Badi ◽  
D. Starikov ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
High Temperature ◽  
Boron Nitride ◽  
Electron Cyclotron Resonance ◽  
Surface Composition ◽  
Ion Beam ◽  
Reactive Ion Etching ◽  
Rf Power ◽  
Ion Etching ◽  
Etch Rates

ABSTRACTBoron nitride (BN) and gallium nitride (GaN) are known as superior semiconductor materials for high power and high temperature applications. Undoped BN layers grown using ion beam and electron cyclotron resonance (ECR) assisted physical deposition on conductive GaN films have demonstrated good insulating properties. These films are thus good candidates as thin insulating layers in high temperature GaN-based device structures such as MIS diodes and MISFETs due to their close thermal expansion coefficient. In order to address the device processing issue, reactive ion etching (RIE) tests were performed on these films. Using Cl2/Ar chemistry, etch rates up to 600 Å/min were measured. These rates were found to increase linearly with increasing rf power and Cl2 flow rate. GaN layers grown by gas source MBE were also dry etched, resulting in smooth sidewalls. Etch rates up to 1,400 Å/min were achieved at 200 W rf power (-280 V d.c. bias) in a BCl3/Cl2/Ar chemistry; this is the highest RIE rate reported up to now for GaN. Using Cl2/Ar and BCl3/Cl2/Ar for BN and GaN respectively, etch selectivities in excess of 5:1 can be obtained. Finally, preliminary Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS) results on residue deposition and surface composition changes as a function of the different etch conditions are presented.

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