Ion Bombardment Effect on the Properties of a-Si:H

1984 ◽  
Vol 38 ◽  
Author(s):  
B. Drevillon ◽  
J. P. M. Schmitt
Keyword(s):  
Surface Morphology ◽  
Hydrogen Evolution ◽  
Rough Surface ◽  
Spectroscopic Ellipsometry ◽  
Film Growth ◽  
Ion Bombardment ◽  
Sharp Interface ◽  
Charged Species ◽  
Amorphous Network ◽  
Moderate Energy

AbstractIn a low pressure multipole plasma, the energy of the charged species impinging on the substrate can be varied electrostatically. Spectroscopic ellipsometry is used to study the film growth and the surface morphology. Hydrogen evolution is used to investigate the release of hydrogen from the amorphous network. Moderate energy ion bombardment (Eion ‰ 50 eV) is shown to favour the formation of homogeneous high density films with a sharp interface. Weak ion bombardment (Eion ‰ 20 eV) results in a microscopically rough surface. The material strucbural variations are evidenced by hydrogen evolution kinetics.

Surface Morphology in the Early Stages of Plasma Polymer Film Growth from Amine-Containing Monomers

2011 ◽  
Vol 8 (5) ◽  
pp. 367-372 ◽  
Author(s):  
Andrew Michelmore ◽  
Petr Martinek ◽  
Vasu Sah ◽  
Robert D. Short ◽  
Krasimir Vasilev
Keyword(s):  
Surface Morphology ◽  
Polymer Film ◽  
Film Growth ◽  
Plasma Polymer ◽  
Early Stages

Ion Bombardment and Disorder in Amorphous Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
L. S. Sidhu ◽  
F. Gaspari ◽  
S. Zukotynski
Keyword(s):  
Amorphous Silicon ◽  
Ion Bombardment ◽  
Film Structure ◽  
Structural And Optical Properties ◽  
Lower Growth ◽  
Optical Gap ◽  
Amorphous Network ◽  
Band Position ◽  
Transverse Optic ◽  
Biased Samples

ABSTRACTThe effect of ion bombardment during growth on the structural and optical properties of amorphous silicon are presented. Two series of films were deposited under electrically grounded and positively biased substrate conditions. The biased samples displayed lower growth rates and increased hydrogen content relative to grounded counterparts. The film structure was examined using Raman spectroscopy. The transverse optic like phonon band position was used as a parameter to characterize network order. Biased samples displayed an increased order of the amorphous network relative to grounded samples. Furthermore, biased samples exhibited a larger optical gap. These results are correlated and attributed to reduced ion bombardment effects.

scholarly journals Roughening in Nonlinear Surface Growth Model

2020 ◽  
Vol 10 (4) ◽  
pp. 1422 ◽  
Author(s):  
Gabriella Bognár
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Molecular Beam ◽  
Film Growth ◽  
Nonlinear Differential Equations ◽  
Numerical Approach ◽  
Surface Roughening ◽  
Time Interval ◽  
Nonlinear Surface ◽  
Over Time

The aim of this paper is to examine the coarsening process in the evolution of the surface morphology during molecular beam epitaxy (MBE). A numerical approach for modeling the evolution of surface roughening in film growth by MBE is proposed. The model is based on the nonlinear differential equations by Kuramoto–Sivashinsky (KS) namely, KS and CKS (conserved KS). In particular, we propose a “combined version” of KS and CKS equations, which is solved as a function of a parameter r for the 1 + 1 dimensional case. The computation provides film height as a function of space and time. From this quantity the change of the width of the film over time has numerically been studied as a function of r. The main result of the research is that the surface width is exponentially increasing with increasing time and the change in surface width for smaller r values is significantly greater over longer time interval.

Low Energy Ar Ion Bombardment of (001) Si: Defects and Surface Morphology

1991 ◽  
Vol 223 ◽  
Author(s):  
M. V. R. Murty ◽  
Harry A. Atwater ◽  
Thomas J. Watson
Keyword(s):  
Molecular Dynamics ◽  
Surface Morphology ◽  
Surface Defect ◽  
Formation Rate ◽  
Ion Bombardment ◽  
Low Energy ◽  
Dynamics Simulation ◽  
Defect Structures ◽  
Adatom Diffusion ◽  
Migration Component

ABSTRACTThe interaction of low energy Ar+ ions with several surface defect structures on (001) Si has been investigated using molecular dynamics simulation. The simulations suggest that ions with energy less than 20 eV selectively displace surface atoms without causing bulk damage, and that the displacement energies for different defect structures is different. The most important effect of ion bombardment on surface morphology is the increased formation rate of single adatoms, which may lead to smoother surfaces by enhanced coarsening at typical epitaxial temperatures. Simulations results also imply that the migration component of adatom diffusion is not significantly enhanced by ion bombardment at typical epitaxial temperatures (600 – 800 K).

The dynamics of a rough surface during film growth

1988 ◽  
Vol 89 (2-3) ◽  
pp. 357-359 ◽  
Author(s):  
V.M. Genkin ◽  
A.A. Fraerman
Keyword(s):  
Rough Surface ◽  
Film Growth

tudies on Titanium Nitride Coatings - Effect of Ion Bombardment

2000 ◽  
Vol 647 ◽  
Author(s):  
K. Deenamma Vargheese ◽  
G. Mohan Rao
Keyword(s):  
Titanium Nitride ◽  
Electron Cyclotron Resonance ◽  
Film Growth ◽  
Morphological Changes ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Film Properties ◽  
Ion Energy ◽  
Ecr Plasma ◽  
Plasma Sputtering

AbstractIon bombardment during thin film growth is known to cause structural and morphological changes in the deposited films and thus affecting the film properties. These effects can be due to the variation in the bombarding ion flux or their energy. We have deposited titanium nitride films by two distinctly different methods, viz. Electron Cyclotron Resonance (ECR) plasma sputtering and bias assisted reactive magnetron sputtering. The former represents low energy (typically less than 30 eV) but high density plasma (1011cm−3), whereas, in the latter case the ion energy is controlled by varying the bias to the substrate (typically a few hundred volts) but the ion flux is low (109cm−3). The deposited titanium nitride films are characterized for their structure, grain size, surface roughness and electrical resistivity.

The Analysis of the Film Morphology

2013 ◽  
Vol 734-737 ◽  
pp. 2377-2381
Author(s):  
Bo Xiong Zhao ◽  
Yu Jian Du ◽  
Xin Sui
Keyword(s):  
Thin Film ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ybco Film ◽  
Thin Film Growth ◽  
Schematic Diagram ◽  
Film Morphology ◽  
Crystal Film ◽  
New Type

Thin film technologies are widely used in modern scientific and technological fields .The theory of thin film growth is guidance for developing a new-type materials and improving the properties of custom thin film materials .In this article , the studies of thin film growth are carried out. The studies are made a simulation of surface growth of the GaxIn1-xAs1-ySbyand YBCO film, Schematic diagram of the surface morphology under different substrate temperature of thin film growth are obtained and analyzed .Many significant results are found. First of all ,the background of the topic ,research purpose and significance are described in this article .Then the studies of thin film growth are carried out ，to analyse the effects of different elements on the surface of the crystal film.

Surface morphology of Si(100), GaAs(100) and InP(100) following O2+ and Cs+ ion bombardment

Vacuum ◽  
1984 ◽  
Vol 34 (1-2) ◽  
pp. 145-151 ◽  
Author(s):  
S Duncan ◽  
R Smith ◽  
DE Sykes ◽  
JM Walls
Keyword(s):  
Surface Morphology ◽  
Ion Bombardment
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