Low Temperature Grown Thin Inalas Step Graded Buffers for Application on Optical Modulator at 1.3 μM

1995 ◽  
Vol 379 ◽  
Author(s):  
Lei Shen ◽  
H. H. Wieder ◽  
W. S. C. Chang
Keyword(s):  
Low Temperature ◽  
Gaas Substrate ◽  
Stark Effect ◽  
Lattice Mismatch ◽  
Multiple Quantum Well ◽  
Lattice Relaxation ◽  
Buffer Layers ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Quantum Confined

ABSTRACTPreliminary results are described about the growth, structure and properties of multiple quantum well(MQW) Quantum Confined Stark Effect (QCSE) modulators grown on GaAs substrates for operation at 1.3μm in wavelength. Step graded InAlAs buffer layers grown at low temperature by molecular beam epitaxy (MBE) with a total thickness of 0.3 μm are used to relieve the strain caused by the lattice-mismatch between the GaAs substrate and the In0.35Ga0.65As/In0.35Al0.65As MQW heterostructure. X-ray diffraction spectra show that significant lattice relaxation takes place in the buffer. A quantum confined Stark shift of the exciton absorption peak of 48meV was obtained with an applied electric field of 130KV/cm, measured in PIN diode structures consisting of 30 period 95ÅIn0.35Ga0.65As/100ÅIn0.35Al0.65As MQWs on a 3 stage compositionally step graded InxAl1−xAs buffer doped with Si to 5*1017/cm3 grown on a nominally 1018/cm3 n-type doped GaAs substrate.

Effect of Interdiffusion on the Subbands in an In0.65Gs0.35As/GaAs Multiple-quantum well Structure on GaAs Substrate at 1.55μm Operation Wavelength

1995 ◽  
Vol 417 ◽  
Author(s):  
M. C. Y. Chan ◽  
E. Herbert Li ◽  
K. S. Chan
Keyword(s):  
Quantum Well ◽  
Fiber Optics ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Multiple Quantum Well ◽  
Composition Profile ◽  
Device Performance ◽  
Multiple Quantum ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractAnalysis of high indium concentration in interdiffused In0.65Gs0.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5gtm Ifor applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55μm and which base on the more matured and reliable GaAs technology.

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

2015 ◽  
Vol 764-765 ◽  
pp. 1250-1254
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Incident Power ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

scholarly journals STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES

1996 ◽  
Vol 45 (2) ◽  
pp. 274
Author(s):  
YU QIAN ◽  
WANG JIAN-HUA ◽  
LI DE-JIE ◽  
WANG YU-TIAN ◽  
ZHUANG YAN ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

GaInAs/InP waveguide multiple-quantum-well optical modulator with 9 dB on/off ratio

1987 ◽  
Vol 23 (20) ◽  
pp. 1067 ◽  
Author(s):  
K. Wakita ◽  
S. Nojima ◽  
K. Nakashima ◽  
Y. Kawaguchi
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Quantum confined Stark effect in ZnCdSe/MgZnCdSe multiple quantum wells grown on InP substrates

1998 ◽  
Vol 184-185 ◽  
pp. 732-736 ◽  
Author(s):  
Takeshi Nagano ◽  
Ichirou Nomura ◽  
Masaru Haraguchi ◽  
Masayuki Arai ◽  
Hiroshi Hattori ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Inp Substrates
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