scholarly journals STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES

1996 ◽  
Vol 45 (2) ◽  
pp. 274
Author(s):  
YU QIAN ◽  
WANG JIAN-HUA ◽  
LI DE-JIE ◽  
WANG YU-TIAN ◽  
ZHUANG YAN ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Strain Balanced InGaAs/GaAsP Multiple Quantum Well Modulators at 1.06 µm

1995 ◽  
Vol 379 ◽  
Author(s):  
J.E. Cunningham
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Elastic Limit ◽  
Multiple Quantum Well ◽  
Surface Topology ◽  
Electron Mass ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Light Signals

We review growth and optical properties of strain balanced, InGaAs/GaAsP Multiple Quantum Well structures on GaAs in order to make defect free, 1.06 µm modulators. Here, we implement strain balancing near the elastic limit on a length scale of strong size quantization so as to open up a special class of semiconductors materials. In this system we find the in-plane electron mass is strain-enhanced by 30 %. This preserves both excitonic binding energy and excitonic oscillator strength. Consequently, quantum well absorption at 1.06 pan can be nearly comparable to that of a GaAs qw. Also, strain balanced materials show an improved capacity over 850 nm MQW to optically modulate light signals through the Quantum Confined Stark Effect. This is attributed to a light -heavy hole splitting of 140 meV that is caused by a large component of shear strain in these systems. Growth of strain balanced materials is challenging because the strain energy can be comparable to the surface energy that bonds atoms to the crystal. In order to accurately predict the critical layer thicknesses for strain relief as well as the reorganized surface topology, we develop a 2D-3D growth mode model.

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Band-Edge Electroabsorption in Quantum Well Structures: The Quantum-Confined Stark Effect

1984 ◽  
Vol 53 (22) ◽  
pp. 2173-2176 ◽  
Author(s):  
D. A. B. Miller ◽  
D. S. Chemla ◽  
T. C. Damen ◽  
A. C. Gossard ◽  
W. Wiegmann ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Band Edge ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

2015 ◽  
Vol 764-765 ◽  
pp. 1250-1254
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Incident Power ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

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