Effect of Interdiffusion on the Subbands in an In0.65Gs0.35As/GaAs Multiple-quantum well Structure on GaAs Substrate at 1.55μm Operation Wavelength

1995 ◽  
Vol 417 ◽  
Author(s):  
M. C. Y. Chan ◽  
E. Herbert Li ◽  
K. S. Chan
Keyword(s):  
Quantum Well ◽  
Fiber Optics ◽  
Gaas Substrate ◽  
Lattice Mismatch ◽  
Multiple Quantum Well ◽  
Composition Profile ◽  
Device Performance ◽  
Multiple Quantum ◽  
Large Lattice ◽  
Large Lattice Mismatch

AbstractAnalysis of high indium concentration in interdiffused In0.65Gs0.35As/GaAs multiple quantum well (MQW) structure on GaAs Substrate is being studied. This material can achieve operating wavelengths around 1.5gtm Ifor applications in fiber optics communications. The large lattice mismatch problem (over 4.5% in this study) can be solved by using a linearly-graded InGaAs buffer layer for reducing any dislocation between the adjacent layers. Interdiffusion in the MQW structure can modify the composition profile in order to tailor the optical absorption and refraction properties. Results show that this system can have promising device performance operates at around 1.55μm and which base on the more matured and reliable GaAs technology.

Arsenic-free GaAs substrate preparation and direct growth of GaAs/AlGaAs multiple quantum well without buffer layer

1995 ◽  
Vol 150 ◽  
pp. 13-17 ◽  
Author(s):  
Kanji Iizuka ◽  
Kazuo Matsumaru ◽  
Toshimasa Suzuki ◽  
Haruo Hirose ◽  
Kenji Suzuki ◽  
...  
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Substrate Preparation ◽  
Direct Growth

scholarly journals Epitaxial Growth of Germanium on Silicon for Light Emitters

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Chengzhao Chen ◽  
Cheng Li ◽  
Shihao Huang ◽  
Yuanyu Zheng ◽  
Hongkai Lai ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Infrared ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Sige Layer ◽  
Infrared Light ◽  
Multiple Quantum ◽  
Light Emitters ◽  
Large Lattice ◽  
Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

Photoreflectance Spectra from GaAs Buffer Layer of GaAs/AlAs Multiple Quantum Well/GaAs Buffer/GaAs Substrate

1991 ◽  
Vol 30 (Part 1, No. 7) ◽  
pp. 1367-1372 ◽  
Author(s):  
Masanobu Haraguchi ◽  
Yoshinori Nakagawa ◽  
Masuo Fukui ◽  
Shunichi Muto
Keyword(s):  
Quantum Well ◽  
Buffer Layer ◽  
Gaas Substrate ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Gaas Buffer Layer

Formation of quantum-dot quantum-well heteronanostructures with large lattice mismatch: ZnS/CdS/ZnS

2001 ◽  
Vol 114 (4) ◽  
pp. 1813-1822 ◽  
Author(s):  
Reginald B. Little ◽  
Mostafa A. El-Sayed ◽  
Garnett W. Bryant ◽  
Susan Burke
Keyword(s):  
Quantum Dot ◽  
Quantum Well ◽  
Lattice Mismatch ◽  
Large Lattice ◽  
Large Lattice Mismatch

Low Temperature Grown Thin Inalas Step Graded Buffers for Application on Optical Modulator at 1.3 μM

1995 ◽  
Vol 379 ◽  
Author(s):  
Lei Shen ◽  
H. H. Wieder ◽  
W. S. C. Chang
Keyword(s):  
Low Temperature ◽  
Gaas Substrate ◽  
Stark Effect ◽  
Lattice Mismatch ◽  
Multiple Quantum Well ◽  
Lattice Relaxation ◽  
Buffer Layers ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Quantum Confined

ABSTRACTPreliminary results are described about the growth, structure and properties of multiple quantum well(MQW) Quantum Confined Stark Effect (QCSE) modulators grown on GaAs substrates for operation at 1.3μm in wavelength. Step graded InAlAs buffer layers grown at low temperature by molecular beam epitaxy (MBE) with a total thickness of 0.3 μm are used to relieve the strain caused by the lattice-mismatch between the GaAs substrate and the In0.35Ga0.65As/In0.35Al0.65As MQW heterostructure. X-ray diffraction spectra show that significant lattice relaxation takes place in the buffer. A quantum confined Stark shift of the exciton absorption peak of 48meV was obtained with an applied electric field of 130KV/cm, measured in PIN diode structures consisting of 30 period 95ÅIn0.35Ga0.65As/100ÅIn0.35Al0.65As MQWs on a 3 stage compositionally step graded InxAl1−xAs buffer doped with Si to 5*1017/cm3 grown on a nominally 1018/cm3 n-type doped GaAs substrate.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures
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