High contrast Fabry–Perot optical modulator using quantum confined Stark effect tuning in InGaAs‐GaAs multiple quantum well cavity

1993 ◽  
Vol 63 (3) ◽  
pp. 296-298 ◽  
Author(s):  
S. Cheung ◽  
F. Jain ◽  
R. Sacks ◽  
D. Cullen ◽  
G. Ball ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
High Contrast ◽  
Quantum Confined Stark Effect ◽  
Fabry Perot ◽  
Quantum Confined

scholarly journals STUDY ON THE QUANTUM CONFINED STARK EFFECT OF InGaAs/InAlAs MULTIPLE QUANTUM WELL STRUCTURES

1996 ◽  
Vol 45 (2) ◽  
pp. 274
Author(s):  
YU QIAN ◽  
WANG JIAN-HUA ◽  
LI DE-JIE ◽  
WANG YU-TIAN ◽  
ZHUANG YAN ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

Photoluminescence and Recombination Mechanisms in Nitride-Based Multiple Quantum Wells

2015 ◽  
Vol 764-765 ◽  
pp. 1250-1254
Author(s):  
Ya Fen Wu ◽  
Jiunn Chyi Lee
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Multiple Quantum ◽  
Incident Power ◽  
Quantum Confined Stark Effect ◽  
Metal Organic ◽  
Quantum Confined

The InGaN/AlGaN multiple-quantum-well heterostructures were fabricated by metal-organic chemical vapor deposition system with different indium and aluminum content during the growth of InGaN well layers and AlGaN barrier layers. Temperature-and incident-power-dependent photoluminescence were carried out to examine the recombination mechanisms in the heterostructures. Both of the localization effect and quantum-confined Stark effect are considered. From the experimental and theoretical analysis, the dependence of optical characteristics on the temperature and incident-power are consistent with the recombination mechanisms involving band-tail states and the screen of quantum-confined Stark effect.

High-contrast optoelectronic logic device using a waveguide multiple-quantum-well optical modulator

1987 ◽  
Vol 23 (5) ◽  
pp. 213-215 ◽  
Author(s):  
P.J. Bradley ◽  
P. Wheatley ◽  
G. Parry ◽  
J.E. Midwinter ◽  
P. Mistry ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
High Contrast ◽  
Logic Device

Low Temperature Grown Thin Inalas Step Graded Buffers for Application on Optical Modulator at 1.3 μM

1995 ◽  
Vol 379 ◽  
Author(s):  
Lei Shen ◽  
H. H. Wieder ◽  
W. S. C. Chang
Keyword(s):  
Low Temperature ◽  
Gaas Substrate ◽  
Stark Effect ◽  
Lattice Mismatch ◽  
Multiple Quantum Well ◽  
Lattice Relaxation ◽  
Buffer Layers ◽  
Optical Modulator ◽  
Multiple Quantum ◽  
Quantum Confined

ABSTRACTPreliminary results are described about the growth, structure and properties of multiple quantum well(MQW) Quantum Confined Stark Effect (QCSE) modulators grown on GaAs substrates for operation at 1.3μm in wavelength. Step graded InAlAs buffer layers grown at low temperature by molecular beam epitaxy (MBE) with a total thickness of 0.3 μm are used to relieve the strain caused by the lattice-mismatch between the GaAs substrate and the In0.35Ga0.65As/In0.35Al0.65As MQW heterostructure. X-ray diffraction spectra show that significant lattice relaxation takes place in the buffer. A quantum confined Stark shift of the exciton absorption peak of 48meV was obtained with an applied electric field of 130KV/cm, measured in PIN diode structures consisting of 30 period 95ÅIn0.35Ga0.65As/100ÅIn0.35Al0.65As MQWs on a 3 stage compositionally step graded InxAl1−xAs buffer doped with Si to 5*1017/cm3 grown on a nominally 1018/cm3 n-type doped GaAs substrate.

Strain Balanced InGaAs/GaAsP Multiple Quantum Well Modulators at 1.06 µm

1995 ◽  
Vol 379 ◽  
Author(s):  
J.E. Cunningham
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Elastic Limit ◽  
Multiple Quantum Well ◽  
Surface Topology ◽  
Electron Mass ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Quantum Confined Stark Effect ◽  
Light Signals

We review growth and optical properties of strain balanced, InGaAs/GaAsP Multiple Quantum Well structures on GaAs in order to make defect free, 1.06 µm modulators. Here, we implement strain balancing near the elastic limit on a length scale of strong size quantization so as to open up a special class of semiconductors materials. In this system we find the in-plane electron mass is strain-enhanced by 30 %. This preserves both excitonic binding energy and excitonic oscillator strength. Consequently, quantum well absorption at 1.06 pan can be nearly comparable to that of a GaAs qw. Also, strain balanced materials show an improved capacity over 850 nm MQW to optically modulate light signals through the Quantum Confined Stark Effect. This is attributed to a light -heavy hole splitting of 140 meV that is caused by a large component of shear strain in these systems. Growth of strain balanced materials is challenging because the strain energy can be comparable to the surface energy that bonds atoms to the crystal. In order to accurately predict the critical layer thicknesses for strain relief as well as the reorganized surface topology, we develop a 2D-3D growth mode model.

Sign in / Sign up

Export Citation Format

Share Document