Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
P.K. Hucknall ◽  
S. Sugden ◽  
C.J. Sofield ◽  
T.C.Q Noakes ◽  
C.F. Mcconville
Keyword(s):  
Silicon Germanium ◽  
Chemical Vapour ◽  
Depth Resolution ◽  
Surface Region ◽  
Medium Energy ◽  
Ion Scattering ◽  
Individual Layer ◽  
Rutherford Back Scattering ◽  
System A ◽  
Medium Energy Ion Scattering

ABSTRACTThe ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon-silicon/germanium (Si/Sil-xGex) hetero-structure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapour deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Sil-xGex can be uniquely identified with a depth resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition and the results compared with conventional Rutherford back-scattering spectrometry (RBS).

Composition and structure of the native Si oxide by high depth resolution medium energy ion scattering

1991 ◽  
Vol 241 (1-2) ◽  
pp. A5 ◽  
Author(s):  
Amir H. Al-Bayati ◽  
Kevin G. Orrman-Rossiter ◽  
J.A. van den Berg ◽  
D.G. Armour
Keyword(s):  
Depth Resolution ◽  
Medium Energy ◽  
Ion Scattering ◽  
Composition And Structure ◽  
Medium Energy Ion Scattering ◽  
High Depth

THE SATURATED (3 × 3)-H/Cu(111) SYSTEM: A STRUCTURAL STUDY USING MEDIUM-ENERGY ION SCATTERING AND HELIUM ATOM SCATTERING

2007 ◽  
Vol 14 (06) ◽  
pp. 1191-1198 ◽  
Author(s):  
I. G. SHUTTLEWORTH
Keyword(s):  
Helium Atom ◽  
Cross Section ◽  
Atomic Hydrogen ◽  
High Symmetry ◽  
Medium Energy ◽  
Ion Scattering ◽  
Helium Atom Scattering ◽  
Atom Scattering ◽  
System A ◽  
Medium Energy Ion Scattering

The adsorption of atomic hydrogen on Cu (111) has been studied using the techniques of helium atom scattering (HAS) and medium-energy ion scattering (MEIS). Ion scattering investigations of the saturated (3 × 3)- H / Cu (111) system indicate that no reconstruction of the Cu substrate exists along the high symmetry directions of the surface. The HAS hydrogen cross-section for H / Cu (111) has been determined to be (12.5 ± 2.5 Å2). The symmetry of the HAS diffraction pattern shows that the (3 × 3)- H / Cu (111) system is formed of a single domain structure.

Damage and Dopant Profiles Produced by Ultra-Shallow Boron And Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering.

2002 ◽  
Vol 717 ◽  
Author(s):  
J. A. van den Berg ◽  
D. G. Armour ◽  
S. Zhang ◽  
S. Whelan ◽  
M. Werner ◽  
...  
Keyword(s):  
Depth Resolution ◽  
Amorphous Layer ◽  
Medium Energy ◽  
Ion Scattering ◽  
Oxide Interface ◽  
Enhanced Diffusion ◽  
Damage Layer ◽  
Different Temperatures ◽  
Damage Depth ◽  
Medium Energy Ion Scattering

AbstractMedium energy ion scattering (MEIS), operated at sub-nm depth resolution in the double alignment configuration, has been used to examine implant and damage depth profiles formed in Si(100) substrates irradiated with 2.5 keV As+ and 1 keV B+ ions. Samples were implanted at temperatures varying between 150°C, and 300°C to doses ranging from 3X1014 to 2X1016 cm-2. For the As implants the MEIS studies demonstrate the occurrence of effects such as a dopant accommodation linked to the growth in depth of the damage layer, dopant clustering, as well as damage and dopant movement upon annealing. Following epitaxial regrowth at 600°C, approximately half of the As was observed to be in substitutional sites, consistent with the reported formation of AsnV complexes (n≤4), while the remainder became segregated and became trapped within a narrow, 1.1 nm wide layer at the Si/oxide interfaceMEIS measurements of the B implants indicate the formation of two distinct damage regions each with a different dependence on implant dose, the importance of dynamic annealing for implants at room temperature and above, and a competing point defect trapping effect at the Si/oxide interface. B+ implantation at low temperature resulted in the formation of an amorphous layer due to the drastic reduction of dynamic annealing processes.Notably different dopant distributions were measured by SIMS in the samples implanted with As at different temperatures following rapid thermal annealing (RTA) up to 1100°C in an oxidising environment. Implant temperature dependent interactions between defects and dopants are reflected in the transient enhanced diffusion (TED) behaviour of As.

Sign in / Sign up

Export Citation Format

Share Document