The Fourth International Workshop on Junction Technology, 2004. IWJT '04.

Low temperature activated Ga and Sb ion-implanted shallow junctions

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306770 ◽

2005 ◽

Author(s):

S.G. Tavakoli ◽

Kyoungsoo Lee ◽

Sungkweon Baek ◽

Hyunsang Hwang

Keyword(s):

Low Temperature ◽

Shallow Junctions ◽

Ion Implanted

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Effect of silicon substrate hydrogenation treatment on nickel silicide formation

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306774 ◽

2004 ◽

Author(s):

A. Vengurlekar ◽

S. Balasubramanian ◽

S. Ashok ◽

D. Theodore ◽

D.Z. Chi

Keyword(s):

Silicon Substrate ◽

Nickel Silicide ◽

Silicide Formation ◽

Hydrogenation Treatment

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Deep sub-micron ultra-low power CMOS device design and optimization

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306872 ◽

2004 ◽

Author(s):

Xinfu Liu ◽

K.Y. Wu ◽

Jianghua Ju ◽

Hokmin Ho ◽

Xing Yu ◽

...

Keyword(s):

Low Power ◽

Device Design ◽

Ultra Low Power ◽

Design And Optimization ◽

Low Power Cmos

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Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306792 ◽

2004 ◽

Author(s):

Y.C. Kong ◽

Y.D. Zheng ◽

C.H. Zhou ◽

Y.Z. Deng ◽

S.L. Gu ◽

...

Keyword(s):

Electron Gas ◽

Two Dimensional ◽

Dimensional Electron ◽

Two Dimensional Electron Gas ◽

Gas Density ◽

Double Heterostructure ◽

Al Content ◽

Dimensional Electron Gas ◽

High Al Content

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Structure properties of GaN/sub 1-x/P/sub x/ ternary alloys grown by metal-organic chemical vapor deposition

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306795 ◽

2004 ◽

Author(s):

D.J. Chen ◽

B. Shen ◽

F.J. Xu ◽

Y.Q. Tao ◽

R. Zhang ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Ternary Alloys ◽

Organic Chemical ◽

Metal Organic ◽

Organic Chemical Vapor Deposition ◽

Structure Properties

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Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306844 ◽

2004 ◽

Author(s):

L.J. Chou ◽

H.T. Lu ◽

L.J. Chen ◽

J.S. Huang

Keyword(s):

Ion Implantation ◽

Light Emitting ◽

Shallow Junction

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The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306845 ◽

2004 ◽

Author(s):

R. Yang ◽

J.S. Luo ◽

J. Tu ◽

R.Z. Zhang

Keyword(s):

Thin Layer ◽

Structure Parameters ◽

Strained Sige

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Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306853 ◽

2004 ◽

Author(s):

L. Sun ◽

X.Y. Liu ◽

G. Du ◽

J.F. Kang ◽

X.D. Guan ◽

...

Keyword(s):

Schottky Barrier ◽

Thin Body ◽

Barrier Tunneling

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I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306782 ◽

2004 ◽

Author(s):

Shiyang Zhu ◽

Guoping Ru ◽

Xinping Qu ◽

R.L. Van Meirhaeghe ◽

S. Forment ◽

...

Keyword(s):

Schottky Contacts ◽

Ternary Silicide

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Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization

The Fourth International Workshop on Junction Technology, 2004. IWJT '04. ◽

10.1109/iwjt.2004.1306749 ◽

2004 ◽

Author(s):

Byung Jin Cho ◽

D. Poon ◽

Leng Seow Tan ◽

M. Bhat ◽

A. See

Keyword(s):

Process Optimization ◽

Pulse Laser ◽

Laser Annealing ◽

Multiple Pulse

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The Fourth International Workshop on Junction Technology, 2004. IWJT '04.
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low temperature activated Ga and Sb ion-implanted shallow junctions

Effect of silicon substrate hydrogenation treatment on nickel silicide formation

Deep sub-micron ultra-low power CMOS device design and optimization

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Structure properties of GaN/sub 1-x/P/sub x/ ternary alloys grown by metal-organic chemical vapor deposition

Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction

The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs

Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology

I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts

Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization

Export Citation Format

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Low temperature activated Ga and Sb ion-implanted shallow junctions

Effect of silicon substrate hydrogenation treatment on nickel silicide formation

Deep sub-micron ultra-low power CMOS device design and optimization

Two-dimensional electron gas density in high Al content Al/sub x/Ga/sub 1-x/N/GaN double heterostructure

Structure properties of GaN/sub 1-x/P/sub x/ ternary alloys grown by metal-organic chemical vapor deposition

Effects of ion-implantation on light-emitting FeSi/sub 2/ shallow junction

The influence of strained SiGe thin layer and correlative structure parameters on sub-threshold characteristics of SiGe PMOSFETs

Fabrication of the sub-100 nm thin body SOI Schottky barrier tunneling transistors with sidewall etchback technology

I-V-T studies on ternary silicide Co/sub 1-x/Ni/sub x/Si/sub 2//n-Si Schottky contacts

Multiple-pulse laser annealing of boron-implanted preamorphized silicon and the process optimization

The Fourth International Workshop on Junction Technology, 2004. IWJT '04.
Latest Publications