Quantitative Compositional Profiling of Conjugated Quantum Dots with Single Atomic Layer Depth Resolution via Time-of-Flight Medium-Energy Ion Scattering Spectroscopy

2014 ◽  
Vol 86 (2) ◽  
pp. 1091-1097 ◽  
Author(s):  
Kang-Won Jung ◽  
Hyunung Yu ◽  
Won Ja Min ◽  
Kyu-Sang Yu ◽  
M. A. Sortica ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Time Of Flight ◽  
Depth Resolution ◽  
Atomic Layer ◽  
Medium Energy ◽  
Ion Scattering ◽  
Layer Depth ◽  
Ion Scattering Spectroscopy ◽  
Medium Energy Ion Scattering

Identification of donor deactivation centers in heavily As-doped Si using time-of-flight medium-energy ion scattering spectroscopy

2015 ◽  
Vol 118 (13) ◽  
pp. 135706 ◽  
Author(s):  
Won Ja Min ◽  
Kyungsu Park ◽  
Kyu-Sang Yu ◽  
Sungjung Joo ◽  
Yong-Sung Kim ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Medium Energy ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Medium Energy Ion Scattering

Traceable thickness measurement of ultra-thin HfO2 films by medium-energy ion scattering spectroscopy

Metrologia ◽  
2020 ◽  
Vol 57 (2) ◽  
pp. 025001 ◽  
Author(s):  
Kyung Joong Kim ◽  
Tae Gun Kim ◽  
Ji-Hwan Kwon ◽  
Hyun Ruh ◽  
Kyungsu Park ◽  
...  
Keyword(s):  
Thickness Measurement ◽  
Medium Energy ◽  
Ion Scattering ◽  
Ion Scattering Spectroscopy ◽  
Medium Energy Ion Scattering

Medium-Energy Ion Scattering Analysis with 50 keV He+by the Time-of-Flight Technique

1992 ◽  
Vol 31 (Part 1, No. 12A) ◽  
pp. 4095-4096
Author(s):  
Ichiro Konomi ◽  
Akira Kawano ◽  
Tatsumi Hioki
Keyword(s):  
Time Of Flight ◽  
Medium Energy ◽  
Ion Scattering ◽  
Medium Energy Ion Scattering

Structural and Compositional Study of Sil-xGex Multilayer Structures Using Medium Energy Ion Scattering

1995 ◽  
Vol 379 ◽  
Author(s):  
P.K. Hucknall ◽  
S. Sugden ◽  
C.J. Sofield ◽  
T.C.Q Noakes ◽  
C.F. Mcconville
Keyword(s):  
Silicon Germanium ◽  
Chemical Vapour ◽  
Depth Resolution ◽  
Surface Region ◽  
Medium Energy ◽  
Ion Scattering ◽  
Individual Layer ◽  
Rutherford Back Scattering ◽  
System A ◽  
Medium Energy Ion Scattering

ABSTRACTThe ability to determine structural and compositional information from the sub-surface region of a semiconductor material has been demonstrated using a new time-of-flight medium energy ion scattering spectroscopy (ToF-MEISS) system. A series of silicon-silicon/germanium (Si/Sil-xGex) hetero-structure and multilayer samples, grown using both solid source molecular beam epitaxy (MBE) and gas source chemical vapour deposition (CVD) on Si(100) substrates, have been investigated. These data indicate that each individual layer of Sil-xGex can be uniquely identified with a depth resolution of approximately 3 nm. A comparison of MBE and CVD grown samples has also been made using layers with similar structures and composition and the results compared with conventional Rutherford back-scattering spectrometry (RBS).

Sign in / Sign up

Export Citation Format

Share Document