X-ray Topography of Strain Fields Induced by 100 MeV Ti7+ Ion Irradiated Si(100)

1995 ◽  
Vol 378 ◽  
Author(s):  
B. B. Sharma ◽  
S. R. Gupta ◽  
R. K. Sharma ◽  
V. Kumar ◽  
U. Tiwari ◽  
...  
Keyword(s):  
Plane Strain ◽  
Strain Field ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Deformation ◽  
Beam Direction ◽  
Strain Fields ◽  
X Ray ◽  
Projected Range ◽  
Out Of Plane

AbstractThe lattice deformation caused by 100 MeV Ti7+ ion irradiation in Si (100) has been studied using X-ray topographic techniques. An important finding is the appearance of a strain field perpendicular to the ion beam direction in the irradiated region well separated from the projected range of implanted ions. This in-plane strain extends in the bulk of the sample and is not merely confined to the surface. The implanted region has been found to experience an out of plane strain which is expected to be tensile in nature.

X-Ray Topographic Analysis of Strain Fields Associated with Micron-Sized Gratings on Si(100) Surfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
A.P. Jardine ◽  
M. Dudley ◽  
G. Tolis ◽  
G-D. Yao ◽  
S.M. Durbin
Keyword(s):  
Single Crystals ◽  
Plane Strain ◽  
Strain Field ◽  
Reasonable Agreement ◽  
Zone Model ◽  
Ion Etching ◽  
Strain Fields ◽  
Topographic Analysis ◽  
X Ray ◽  
Beam Reflection

AbstractSi(100) single crystals containing circular gratings etched into the surface using reactive ion etching were analysed using both monochromatic and white beam reflection X-ray topography. Some features of observed X-ray topographic contrast associated with the gratings were modelled using a diffracting zone model, based on a simple radial in-plane strain field. Reasonable agreement was obtained between this model and observations.

scholarly journals Lattice strain distribution resolved by X-ray Bragg-surface diffraction in an Si matrix distorted by embedded FeSi2nanoparticles

2013 ◽  
Vol 46 (6) ◽  
pp. 1796-1804 ◽  
Author(s):  
Rossano Lang ◽  
Alan S. de Menezes ◽  
Adenilson O. dos Santos ◽  
Shay Reboh ◽  
Eliermes A. Meneses ◽  
...  
Keyword(s):  
Strain Distribution ◽  
Beam Energy ◽  
Lattice Strain ◽  
Ion Beam ◽  
Silicon Layer ◽  
Semiconductor Substrate ◽  
X Ray ◽  
Out Of Plane ◽  
Diffraction Peaks ◽  
Surface Diffraction

Out-of-plane and primarily in-plane lattice strain distributions, along the two perpendicular crystallographic directions on the subsurface of a silicon layer with embedded FeSi2nanoparticles, were analyzed and resolved as a function of the synchrotron X-ray beam energy by using ω:φ mappings of the ({\overline 1}11) and (111) Bragg-surface diffraction peaks. The nanoparticles, synthesized by ion-beam-induced epitaxial crystallization of Fe+-implanted Si(001), were observed to have different orientations and morphologies (sphere- and plate-like nanoparticles) within the implanted/recrystallized region. The results show that the shape of the synthesized material singularly affects the surrounding Si lattice. The lattice strain distribution elucidated by the nonconventional X-ray Bragg-surface diffraction technique clearly exhibits an anisotropic effect, predominantly caused by plate-shaped nanoparticles. This type of refined detection reflects a key application of the method, which could be used to allow discrimination of strains in distorted semiconductor substrate layers.

scholarly journals The Effect of Internal Free Surfaces on Void Swelling of Irradiated Pure Iron Containing Subsurface Trenches

Crystals ◽  
2019 ◽  
Vol 9 (5) ◽  
pp. 252
Author(s):  
Tianyao Wang ◽  
Hyosim Kim ◽  
Frank A. Garner ◽  
Kenneth L. Peddicord ◽  
Lin Shao
Keyword(s):  
Pure Iron ◽  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Full Range ◽  
Peak Displacement ◽  
Free Surfaces ◽  
Projected Range ◽  
Void Swelling ◽  
Displacement Per Atom

We studied the effects of internal free surfaces on the evolution of ion-induced void swelling in pure iron. The study was initially driven by the motivation to introduce a planar free-surface defect sink at depths that would remove the injected interstitial effect from ion irradiation, possibly enhancing swelling. Using the focused ion beam technique, deep trenches were created on a cross section of pure iron at various depths, so as to create bridges of thickness ranging from 0.88 μm to 1.70 μm. Samples were then irradiated with 3.5 MeV Fe2+ ions at 475 °C to a fluence corresponding to a peak displacement per atom dose of 150 dpa. The projected range of 3.5 MeV Fe2+ ions is about 1.2 μm so the chosen bridge thicknesses involved fractions of the ion range, thicknesses comparable to the mean ion range (peak of injected interstitial distribution), and thicknesses beyond the full range. It was found that introduction of such surfaces did not enhance swelling but actually decreased it, primarily because there were now two denuded zones with a combined stronger influence than that of the injected interstitial. The study suggests that such strong surface effects must be considered for ion irradiation studies of thin films or bridge-like structures.

Method for Cross-sectional Transmission Electron Microscopy Specimen Preparation of Composite Materials Using a Dedicated Focused Ion Beam System

1999 ◽  
Vol 5 (5) ◽  
pp. 365-370 ◽  
Author(s):  
Toshie Yaguchi ◽  
Takeo Kamino ◽  
Tohru Ishitani ◽  
Ryoichi Urao
Keyword(s):  
Composite Materials ◽  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Implantation Rate ◽  
Specimen Preparation ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Lattice Images

A new method for transmission electron microscope (TEM) specimen preparation using a focused ion beam (FIB) system that results in a lower rate of gallium (Ga) implantation has been developed. The method was applied to structural and analytical studies of composite materials such as silicon (Si)-devices and magneto-optical disk. To protect the specimens against Ga ion irradiation, amorphous tungsten (W) was deposited on the surface of the specimen prior to FIB milling. The deposition was quite effective in reducing the Ga implantation rate, and energy-dispersive X-ray (EDX) analysis of these specimens detected 0.3Ð1.5% Ga incorporated in the thinned area. FIB milling times for these specimens were 1.5Ð2 hr. Although the milling rate was high, all the materials were properly prepared for TEM study, and clear crystal lattice images were observed on all specimens.

Roughening of Au(111) Surfaces During Ion Beam Erosion: A Scanning Tunneling Microscope and X-Ray Diffraction Study

1999 ◽  
Vol 570 ◽  
Author(s):  
A. Judy ◽  
M.V. Ramana Murty ◽  
E. Butler ◽  
J. Pomeroy ◽  
B.H. Cooper ◽  
...  
Keyword(s):  
Scanning Tunneling Microscope ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Normal Incidence ◽  
Scanning Tunneling ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Tunneling Microscopy ◽  
X Ray ◽  
Glancing Angle

ABSTRACTUsing Scanning Tunneling Microscopy(STM) and X-ray diffraction(XRD), we have studied the development of surface roughness on Au(111) during 500eV Ar+ ion irradiation at different angles. During normal incidence erosion the surface roughens and pattern formation occurs. The surface morphology is a mixture of mounds and pits superimposed onto a larger structure of channels and valleys. The characteristic spacing between features grows with a power law behavior t27, where t is the amount of time the sample was irradiated, in agreement with previous measurements[l]. At glancing angles, erosion proceeds smoothly, but not in layer-by-layer fashion. Finally, a combination of glancing angle and normal incidence erosion is used to create a rippled morphology

In-Plane Magnetic and Structural Anisotropies in NI and FE Films Produced by Ion-Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
W. A. Lewis ◽  
M. Farle ◽  
B. M. Clemens ◽  
R. L. White
Keyword(s):  
Ion Beam ◽  
Anisotropy Field ◽  
Angle Of Incidence ◽  
Induced Anisotropy ◽  
Ion Beam Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Beam Assisted Deposition ◽  
Out Of Plane ◽  
Beam Sputtering

ABSTRACTWe report the results of our microstructural investigations into the origin of in-plane uniaxial magnetic anisotropies induced in Ni and Fe thin films by low energy ion beam assisted deposition. 1000 Å films were prepared by ion beam sputtering onto amorphous silica substrates under simultaneous bombardment by 100 eV Xe+ ions under an oblique angle of incidence. The induced anisotropy is studied as a function of ion-to-adsorbate atom arrival ratio, R, from values of 0 to 0.35. The maximum anisotropy field is 150 Oe for Ni and 80 Oe for Fe, but their hard axes are oriented orthogonal to each other. Asymmetric x-ray diffraction is employed to study both in-plane and out-of-plane lattice spacings and crystallographic orientation. In agreement with previous work, we find evidence of a anisotropic in-plane strain of magnitude 0.2-0.5%. In all films, the direction perpendicular to the ion bombardment is compressed relative to parallel. The uniaxial magnetic anisotropy is correlated with this in-plane anisotropic strain using a simple magnetoelastic model.

The Evolution of Strain Relaxation Close to The Critical Thickness

1993 ◽  
Vol 317 ◽  
Author(s):  
P. Kidd ◽  
P.F. Fewster
Keyword(s):  
Residual Strain ◽  
Strain Field ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Local Relaxation ◽  
Homogeneous Strain

ABSTRACTHigh resolution X-ray diffraction space mapping has been used to follow the change in the distribution of residual strain and localised relaxation in low mismatched epitaxial layers. Using this new technique, we have obtained a series of diffraction space maps of partially relaxed epitaxial layers of In.1Ga.9As on GaAs. The layers have different thicknesses and hence different degrees of strain relaxation. The diffuse scatter close to the Bragg peaks provides information about the imperfect and distorted regions in the structure and this has allowed us to examine the extent and distribution of residual strain close to the dislocations. We have followed the evolution of local relaxation, which is confined initially to regions around isolated dislocations, through to the case of overlapping dislocation strain fields, leading to a more homogeneous strain field distribution and microscopic and macroscopic tilting of the layers.

Strained Field of Silver Overlayers Deposited on the Reconstructed Si(111) Surface

1992 ◽  
Vol 280 ◽  
Author(s):  
L. J. Martinez-Miranda ◽  
J. J. Santiago-Aviles ◽  
Raul Perez-Sandoz ◽  
Randolph Carolissen ◽  
H. H. Weitering ◽  
...  
Keyword(s):  
Plane Strain ◽  
Strain Field ◽  
Present System ◽  
Unexpected Result ◽  
X Ray Diffraction ◽  
Lattice Match ◽  
Rocking Curve ◽  
Out Of Plane ◽  
Unit Cells ◽  
Plane Diffraction

ABSTRACTWe have performed high resolution x-ray diffraction measurements of the strain field in UHV deposited Ag(111) films on a 7×7 reconstructed Si(111) surfaces shows a faulted epitaxial layer with a 0.4% out-of-plane strain, and a -1% in-plane strain. The strain field anisotropy is similar to that observed on epitaxial YSi2-x on Si(111), and is an unexpected result for the present system, due to the lack of a lattice match between the silver and silicon unit cells. The out-of-plane diffraction peaks have an angular distribution of 1.23°, full width at half maximum (FWHM), as determined from rocking curve measurements.

Oscillations in Interplanar Spacing Vs. sin2ψ a FEM Analysis

1987 ◽  
Vol 31 ◽  
pp. 191-204 ◽  
Author(s):  
I. C. Noyan ◽  
L. T. Nguyen
Keyword(s):  
Strain Field ◽  
Interplanar Spacing ◽  
Fem Analysis ◽  
Polycrystalline Sample ◽  
Stress Fields ◽  
Stress Determination ◽  
Element Analysis ◽  
Strain Fields ◽  
X Ray ◽  
Strain Data

AbstractRecent studies indicate that, if the stress/strain field within the irradiated volume in an x-ray stress determination experiment is inhomogeneous, oscillations occur in the interplanar spacing vs. sin2ψ plots. There is, however, little work on the degree of inhomogeneity required to cause a given oscillation, the uniqueness of the stress fields that can cause a given set of oscillations, or the error caused by applying the traditional methods currently in use to oscillatory data.In this paper, numerical modeling and eiasto-plastic finite element analysis was used to determine the strain fields in the diffracting volume of a polycrystalline sample under load. The elastic strain fields obtained from the analysis were then averaged over the regions that would diffract in an x-ray experiment/and then correlated to x-ray strain data to obtain an idea of the problems described ahove.

Measurement of Elastic Strains in Crystal Surfaces by X-Ray Diffraction Topography

1967 ◽  
Vol 11 ◽  
pp. 385-393
Author(s):  
Brian R. Lawn
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Strain Fields ◽  
Diamond Surfaces ◽  
X Ray ◽  
Detailed Nature ◽  
Elastic Strains

AbstractThe use of X-ray topographic techniques for studying elastic strains in crystals deformed at their surfaces is becoming widespread, especially in the field of silicon semiconductor devices. Although the broad features of the phenomenological processes involved in producing the strain patterns on the X-ray micrographs are understood, little attention has been devoted to evaluating the detailed nature or range of the strain fields in the crystal. In this paper, an clastic model is proposed for cases in which a region of crystal surface is uniformly deformed over a thin layer. With this model, the associated strain field in the surrounding crystal, which is readily computed from elasticity theory, may be characterized by a single parameter. The model is in accord with observed strain patterns on topographs of abraded diamond surfaces and silicon surfaces onto which a strip of metal film has been evaporated. From the spatial range of the diffraction contrast, an estimate of the parameter characterizing the strain field may be made.

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