X-Ray Topographic Analysis of Strain Fields Associated with Micron-Sized Gratings on Si(100) Surfaces

1989 ◽  
Vol 160 ◽  
Author(s):  
A.P. Jardine ◽  
M. Dudley ◽  
G. Tolis ◽  
G-D. Yao ◽  
S.M. Durbin
Keyword(s):  
Single Crystals ◽  
Plane Strain ◽  
Strain Field ◽  
Reasonable Agreement ◽  
Zone Model ◽  
Ion Etching ◽  
Strain Fields ◽  
Topographic Analysis ◽  
X Ray ◽  
Beam Reflection

AbstractSi(100) single crystals containing circular gratings etched into the surface using reactive ion etching were analysed using both monochromatic and white beam reflection X-ray topography. Some features of observed X-ray topographic contrast associated with the gratings were modelled using a diffracting zone model, based on a simple radial in-plane strain field. Reasonable agreement was obtained between this model and observations.

X-ray Topography of Strain Fields Induced by 100 MeV Ti7+ Ion Irradiated Si(100)

1995 ◽  
Vol 378 ◽  
Author(s):  
B. B. Sharma ◽  
S. R. Gupta ◽  
R. K. Sharma ◽  
V. Kumar ◽  
U. Tiwari ◽  
...  
Keyword(s):  
Plane Strain ◽  
Strain Field ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Lattice Deformation ◽  
Beam Direction ◽  
Strain Fields ◽  
X Ray ◽  
Projected Range ◽  
Out Of Plane

AbstractThe lattice deformation caused by 100 MeV Ti7+ ion irradiation in Si (100) has been studied using X-ray topographic techniques. An important finding is the appearance of a strain field perpendicular to the ion beam direction in the irradiated region well separated from the projected range of implanted ions. This in-plane strain extends in the bulk of the sample and is not merely confined to the surface. The implanted region has been found to experience an out of plane strain which is expected to be tensile in nature.

X-ray photoelectron spectroscopy characterization of barium titanate ceramics prepared by the citric route. Residual carbon study

1997 ◽  
Vol 12 (9) ◽  
pp. 2388-2392 ◽  
Author(s):  
C. Miot ◽  
E. Husson ◽  
C. Proust ◽  
R. Erre ◽  
J. P. Coutures
Keyword(s):  
Barium Titanate ◽  
Single Crystals ◽  
Photoelectron Spectroscopy ◽  
Residual Carbon ◽  
Ion Etching ◽  
Xps Spectra ◽  
X Ray ◽  
Titanate Ceramics

Powder and ceramics of barium titanate prepared by the citric process were studied by x-ray photoelectron spectroscopy (XPS). Spectra of C1s, O1s, Ti2p, Ba3d, and Ba4d levels are analyzed in powder and ceramics immediately after the sintering step and after several months of exposure in the air. Ar-ion etching allowed one to characterize the material intrinsic carbon. The results are discussed in comparison with works previously published on oxide single crystals.

The Evolution of Strain Relaxation Close to The Critical Thickness

1993 ◽  
Vol 317 ◽  
Author(s):  
P. Kidd ◽  
P.F. Fewster
Keyword(s):  
Residual Strain ◽  
Strain Field ◽  
Critical Thickness ◽  
Strain Relaxation ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Strain Fields ◽  
X Ray ◽  
Local Relaxation ◽  
Homogeneous Strain

ABSTRACTHigh resolution X-ray diffraction space mapping has been used to follow the change in the distribution of residual strain and localised relaxation in low mismatched epitaxial layers. Using this new technique, we have obtained a series of diffraction space maps of partially relaxed epitaxial layers of In.1Ga.9As on GaAs. The layers have different thicknesses and hence different degrees of strain relaxation. The diffuse scatter close to the Bragg peaks provides information about the imperfect and distorted regions in the structure and this has allowed us to examine the extent and distribution of residual strain close to the dislocations. We have followed the evolution of local relaxation, which is confined initially to regions around isolated dislocations, through to the case of overlapping dislocation strain fields, leading to a more homogeneous strain field distribution and microscopic and macroscopic tilting of the layers.

Oscillations in Interplanar Spacing Vs. sin2ψ a FEM Analysis

1987 ◽  
Vol 31 ◽  
pp. 191-204 ◽  
Author(s):  
I. C. Noyan ◽  
L. T. Nguyen
Keyword(s):  
Strain Field ◽  
Interplanar Spacing ◽  
Fem Analysis ◽  
Polycrystalline Sample ◽  
Stress Fields ◽  
Stress Determination ◽  
Element Analysis ◽  
Strain Fields ◽  
X Ray ◽  
Strain Data

AbstractRecent studies indicate that, if the stress/strain field within the irradiated volume in an x-ray stress determination experiment is inhomogeneous, oscillations occur in the interplanar spacing vs. sin2ψ plots. There is, however, little work on the degree of inhomogeneity required to cause a given oscillation, the uniqueness of the stress fields that can cause a given set of oscillations, or the error caused by applying the traditional methods currently in use to oscillatory data.In this paper, numerical modeling and eiasto-plastic finite element analysis was used to determine the strain fields in the diffracting volume of a polycrystalline sample under load. The elastic strain fields obtained from the analysis were then averaged over the regions that would diffract in an x-ray experiment/and then correlated to x-ray strain data to obtain an idea of the problems described ahove.

Measurement of Elastic Strains in Crystal Surfaces by X-Ray Diffraction Topography

1967 ◽  
Vol 11 ◽  
pp. 385-393
Author(s):  
Brian R. Lawn
Keyword(s):  
Strain Field ◽  
Crystal Surface ◽  
Silicon Surfaces ◽  
X Ray Diffraction ◽  
Crystal Surfaces ◽  
Strain Fields ◽  
Diamond Surfaces ◽  
X Ray ◽  
Detailed Nature ◽  
Elastic Strains

AbstractThe use of X-ray topographic techniques for studying elastic strains in crystals deformed at their surfaces is becoming widespread, especially in the field of silicon semiconductor devices. Although the broad features of the phenomenological processes involved in producing the strain patterns on the X-ray micrographs are understood, little attention has been devoted to evaluating the detailed nature or range of the strain fields in the crystal. In this paper, an clastic model is proposed for cases in which a region of crystal surface is uniformly deformed over a thin layer. With this model, the associated strain field in the surrounding crystal, which is readily computed from elasticity theory, may be characterized by a single parameter. The model is in accord with observed strain patterns on topographs of abraded diamond surfaces and silicon surfaces onto which a strip of metal film has been evaporated. From the spatial range of the diffraction contrast, an estimate of the parameter characterizing the strain field may be made.

A study of strains in abraded diamond surfaces

1967 ◽  
Vol 301 (1466) ◽  
pp. 239-252 ◽  
Keyword(s):  
Surface Layer ◽  
Abrasive Wear ◽  
Strain Field ◽  
Unit Length ◽  
Surface Damage ◽  
Elastic Model ◽  
Surface Acting ◽  
Topographic Analysis ◽  
Diamond Surfaces ◽  
X Ray

The nature of surface damage suffered by diamond during abrasion processes has been studied by X-ray topographic analysis of the strain patterns in and around microabrasion patches on cube, dodecahedron and octahedron surfaces of highly perfect natural diamonds. The strain field has been computed from an elastic model assuming that the abrasion leaves a thin surface layer of crystal in a state of residual compression. The observed diffraction contrast agrees well with this model. From the contrast patterns the stresses in the surface, expressed as force in the surface acting normally to unit length in the surface, lie in the range 1 × 10 5 to 5 × 10 5 dyn/cm, with little dependence upon orientation of the abrasion. The evidence strongly favours a microcracking mechanism for abrasive wear of diamond.

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