Interaction Between Dislocations and NiFe2O4 Precipitates In A NiO Matrix

1991 ◽  
Vol 230 ◽  
Author(s):  
Scott R. Summerfelt ◽  
C. Barry Carter

AbstractThree different types of dislocation interactions with NiFe2O4 (spinel crystal structure) precipitates in a NiO matrix have been studied. In the first, the movement of dislocations introduced by room temperature deformation is impeded by the spinel precipitates. Glide dislocations in the NiO with ½<011> Burgers vectors and {011} glide planes cannot pass through the spinel precipitates without forming stacking faults because the perfect NiO dislocations are partial dislocations in NiFe2O4. Many dislocation loops but no stacking faults were observed in the deformed samples indicating that the gliding dislocations formed the loops when they moved past the precipitates. In the second type of interactions, cusps were formed in the spinel-NiO interface at close to the dislocation loops when the sample was heat treated; the cusps indicate preferential dissolution of the spinel. In the final interaction, the dislocations were shown to act as preferential nucleation sites when spinel was precipitated from the NiO matrix. At slow nucleation rates, NiFe2O4 precipitated only on the dislocations; when the nucleation rate was increased, precipitation occurred both on and away from the dislocations. Precipitates which form at a dislocation may contain a stacking fault extending from the partial dislocation to a cusp in the spinel-NiO interface. When this occurred, the stacking faults were observed to be faceted parallel to either {111} or {011} planes.

Author(s):  
S. Wisutmethangoon ◽  
T. F. Kelly ◽  
J.E. Flinn

Vacancies are introduced into the crystal phase during quenching of rapid solidified materials. Cavity formation occurs because of the coalescence of the vacancies into a cluster. However, because of the high mobility of vacancies at high temperature, most of them will diffuse back into the liquid phase, and some will be lost to defects such as dislocations. Oxygen is known to stabilize cavities by decreasing the surface energy through a chemisorption process. These stabilized cavities, furthermore, act as effective nucleation sites for precipitates to form during aging. Four different types of powders with different oxygen contents were prepared by gas atomization processing. The atomized powders were then consolidated by hot extrusion at 900 °C with an extrusion ratio 10,5:1. After consolidation, specimens were heat treated at 1000 °C for 1 hr followed by water quenching. Finally, the specimens were aged at 600 °C for about 800 hrs. TEM samples were prepared from the gripends of tensile specimens of both unaged and aged alloys.


1988 ◽  
Vol 133 ◽  
Author(s):  
Vijay K. Vasudevan ◽  
Robert Wheeler ◽  
Hamish L. Fraser

ABSTRACTThe dislocation structures in rapidly solidified Al3Ti with the DO22 structure and the ternary Al-25Ti-8Ni (at.%) alloy with the L12 structure deformed in compression in the temperature range of 25 to 800°C have been studied by transmission electron microscopy. The room temperature deformation microstructure of the Al3Ti compound is characterized by the presence of stacking faults/order twins on {111} planes bounded by partial dislocations with Burgers vector b=1/6<112], as reported by others. At intermediate temperatures, besides the stacking faults, slip is also observed as bands on the {001] plane delineated by dislocations with b=1/2<110] which bound APB's. At 600°C, the reported increase in ductility is associated here with additional slip on the {001)<110], {001)[100] and {001)[010] systems. Dislocations with b=<110] exist as pairs of partial dislocations with b=1/2<110] connected by APB's. The mean separation between the partials was measured to be 30 nm, corresponding to an APB energy of ≍32 mJ.m-2 on the (001) plane. Observations also indicate that the APB energy is anisotropic, i.e., is considerably higher on the {111} planes compared to the {001) plane. The deformation microstructure of the Al-25Ti-8Ni L12 alloy is characterized by slip of dislocations with b=<110> gliding on {111} planes, a major fraction of which exist as dipoles. Following deformation at 300°C, there is essentially no evidence of dissociation of these dislocations, although some dissociated dislocations on (001) having b=l/2<110> are also observed. With an increase in temperature, there is a considerable increase in dislocation activity and strong evidence for 1/2<110> dissociated dislocations is present.


1995 ◽  
Vol 378 ◽  
Author(s):  
G. C. M. Silvestre ◽  
R. A. Moore ◽  
B. J. Kennedy

AbstractTo produce Silicon-On-Insulator (SOI) materials with thin Si overlayer, sacrificial oxidation is often used. This creates defects which have adverse effects on device performance. It has been observed that Stacking Faults (SFs) in thin Separation-by-IMplantation-of-OXygen (SIMOX) or Bonded-and-Etched-back-SOI (BESOI) films of less than 600 Å, do not shrink as expected during neutral Ar anneals. Shrinkage of SFs in standard bulk substrates with different capping layers has been investigated to promote the understanding of the Si/Si02 interface effects on Si interstitial incorporation during anneals. The activation energy for growth and shrinkage of SOI samples thicker than 800 A was found to be the same as bulk Si: 2.3 eV (growth) and 4.6 eV (shrinkage). Bulk silicon implanted with low doses of oxygen, permitted investigation of the nucleation sites of SFs in SIMOX where oxygen precipitates are believed to act as nuclei for SFs. A five step etch procedure was modified to reveal the defects in very thin SOI and an automatic defect counting system developed at T.C.D. permitted fast and reliable measurements of size and density of the defects. It appears that the two Frank partial dislocations that bound SFs, are pinned at the two Si/Si02 interfaces for both SIMOX and BESOI films thinner than 500 Å. In thicker SOI, the mechanisms for growth and shrinkage of SFs are the same as for bulk silicon.


2004 ◽  
Vol 819 ◽  
Author(s):  
Randall S. Hay

AbstractMonazite (LaPO4) was indented at room temperature. Deformation twin boundaries and stacking faults were characterized by high resolution transmission electron microscopy. Kinked deformation twins were also characterized and analyzed. Three types of stacking faults associated with climb-dissociated partial dislocations were observed. Two were found on twin boundaries, and a third in the lattice. Formation mechanisms are discussed. The superimposition of stacking faults along twin boundaries during deformation twinning and the glide of climb-dissociated partial dislocations allowed by stacking fault migration are discussed. The possible relationship between the formation mechanisms for these defects and the low- temperature recrystallization and self-annealing of defects in monazite is considered.


Crystals ◽  
2017 ◽  
Vol 7 (12) ◽  
pp. 375 ◽  
Author(s):  
Sijie Li ◽  
Hongyun Luo ◽  
Hui Wang ◽  
Pingwei Xu ◽  
Jun Luo ◽  
...  

A detailed electron microscopical investigation has been made of the stacking faults and dislocations observed in thin films of titanium dioxide grown on the (100) faces of titanium carbide crystals. The large stacking faults formed during the growth process lie on a {101} plane, but they often change from one plane to another of the same family, sometimes on too fine a scale to be clearly resolved. The fault is terminated by a partial dislocation having a vector of the 1/2<101>-type; if the specimen is heated in the microscope, when it becomes non-stoichiometric, the fault anneals out by one of two mechanisms. The first mechanism involves the glide of the partial dislocation terminating the fault, and the second the growth of small dislocation loops formed by the condensation of vacancies introduced as a result of deviations from the stoichiometric composition. Contrast experiments show that the observed dislocations are of two types. The first are dissociated dislocations having a partial 1/2<101> vector, glissile on {101} planes and associated with a stacking fault. The second type of dislocation are undissociated and have a <001> Burgers vector. A sessile configuration is also formed by an interaction between dislocations with 1/2<101> and <001> and Burgers vector. An interaction between glissile partial dislocations and vacancy clusters also occurs, and it is suggested that this is a possible mechanism for the increased yield stress produced when TiO 2 becomes substoichiometric.


2004 ◽  
Vol 821 ◽  
Author(s):  
Randall S. Hay

AbstractMonazite (LaPO4) was indented at room temperature. Deformation twin boundaries and stacking faults were characterized by high resolution transmission electron microscopy. Kinked deformation twins were also characterized and analyzed. Three types of stacking faults associated with climb-dissociated partial dislocations were observed. Two were found on twin boundaries, and a third in the lattice. Formation mechanisms are discussed. The superimposition of stacking faults along twin boundaries during deformation twinning and the glide of climb-dissociated partial dislocations allowed by stacking fault migration are discussed. The possible relationship between the formation mechanisms for these defects and the low- temperature recrystallization and self-annealing of defects in monazite is considered.


2009 ◽  
Vol 615-617 ◽  
pp. 125-128 ◽  
Author(s):  
Amitesh Shrivastava ◽  
Peter G. Muzykov ◽  
Tangali S. Sudarshan

In this work we identified the nucleation sites of inverted pyramid defects in 4H-SiC epilayers using AFM and KOH etching and proposed a mechanism for its formation. Partial dislocations, bounding the stacking faults, mostly aligned along the <11-20> directions, were found at the base of the inverted pyramid defects. It is shown that the basal plane dislocations, serve as nucleation centers for stacking faults, and eventually the formation of inverted pyramid defects. A geometrical model is formulated to explain the formation mechanism of inverted pyramid defects.


Author(s):  
T. Y. Tan ◽  
W. K. Tice

In studying ion implanted semiconductors and fast neutron irradiated metals, the need for characterizing small dislocation loops having diameters of a few hundred angstrom units usually arises. The weak beam imaging method is a powerful technique for analyzing these loops. Because of the large reduction in stacking fault (SF) fringe spacing at large sg, this method allows for a rapid determination of whether the loop is faulted, and, hence, whether it is a perfect or a Frank partial loop. This method was first used by Bicknell to image small faulted loops in boron implanted silicon. He explained the fringe spacing by kinematical theory, i.e., ≃l/(Sg) in the fault fringe in depth oscillation. The fault image contrast formation mechanism is, however, really more complicated.


Author(s):  
Raja Subramanian ◽  
Kenneth S. Vecchio

The structure of stacking faults and partial dislocations in iron pyrite (FeS2) have been studied using transmission electron microscopy. Pyrite has the NaCl structure in which the sodium ions are replaced by iron and chlorine ions by covalently-bonded pairs of sulfur ions. These sulfur pairs are oriented along the <111> direction. This covalent bond between sulfur atoms is the strongest bond in pyrite with Pa3 space group symmetry. These sulfur pairs are believed to move as a whole during dislocation glide. The lattice structure across these stacking faults is of interest as the presence of these stacking faults has been preliminarily linked to a higher sulfur reactivity in pyrite. Conventional TEM contrast analysis and high resolution lattice imaging of the faulted area in the TEM specimen has been carried out.


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