Solid-Phase Ohmic Contacts to GaAs with TiN Diffusion Barriers

1984 ◽  
Vol 37 ◽  
Author(s):  
H. P. Kattelus ◽  
J. L. Tandon ◽  
A. H. Hamdi ◽  
M-A. Nicolet
Keyword(s):  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Diffusion Barriers ◽  
Thermally Stable ◽  
Ohmic Behavior ◽  
Tin Film ◽  
The Stability ◽  
P Type

AbstractWe report on contacts to p-type GaAs formed by a GaAs/Pt/TiN/Ag system. Ohmic behavior in this system is believed to be accomplished by the solidstate reaction of Pt with GaAs. This reaction is confined by the TiN film which is thermally stable. In addition, the TiN film acts as an excellent diffusion barrier in preventing the intermixing of the top Ag layer with GaAs or Pt. Contacts formed with such controlled reaction have important implications for the stability of shallow p-n junction devices.

The Development of Solid Phase Regrowth on GaAs and its applications

1993 ◽  
Vol 319 ◽  
Author(s):  
L. C. Wang
Keyword(s):  
Ohmic Contacts ◽  
Solid Phase ◽  
Low Loss ◽  
Ohmic Behavior ◽  
Gaas Substrates ◽  
Layer Structures ◽  
Solid Phase Reactions ◽  
Solid Phase Regrowth ◽  
P Type ◽  
Ohmic Contact Formation

AbstractA solid phase regrowth process on GaAs has been observed in Pd- and Ni- based bi-layer structures, e.g. the Si/Ni, the Ge/Pd, the In/Pd, and the Sb/Pd structures. Due to the regrowth, uniform epitaxial layers of Ge, GaAs, InxGa1-xAs, and GaSbl-xAsx on GaAs substrates by solid phase reactions can achieved. The model of this regrowth process will be presented. Based on this regrowth mechanism, a series of non-spiking planar ohmic contacts on n and p type GaAs have been developed. Low contact resistivity in the range of mid 10−7 Ω-cm2 was obtained. The ohmic contact formation mechanism of these contacts will also be discussed. All the studies suggest that the ohmic behavior is a result of the formation of an n+ or p+ surface layer via solid phase reactions. The regrowth process has also been utilized to achieve compositional disordering of GaAs/AlGaAs superlattices, and low loss AlGaAs/GaAs waveguide has been obtained.

Reliability Tests of Au-Metallized Ni-Based Ohmic Contacts to 4H-n-SiC with and without Nanocomposite Diffusion Barriers

2010 ◽  
Vol 645-648 ◽  
pp. 737-740 ◽  
Author(s):  
Andrian V. Kuchuk ◽  
M. Guziewicz ◽  
Renata Ratajczak ◽  
Marek Wzorek ◽  
V.P. Kladko ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
Oxygen Penetration ◽  
Long Time ◽  
Small Change ◽  
The Stability ◽  
Reaction Processes ◽  
Aging In Air

The reliability of Ni2Si/n-SiC ohmic contacts with Au overlayer either without or with Ta-Si-N diffusion barrier was investigated after long-time aging in air at 400oC and rapid thermal annealing in Ar up to 800oC. It is shown that aging of the Au/Ni2Si/n-SiC contacts in air at 400oC resulted in complete degradation due to both oxygen penetration and interdiffusion/reaction processes. In contrast, only a small change in properties was detected on the contacts annealed in Ar at 800°C. The stability of both electrical and structural properties of Au/TaSiN/Ni2Si/n-SiC thermally stressed contacts at different conditions points out their superior thermal stability.

Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC

2006 ◽  
Vol 527-529 ◽  
pp. 903-906 ◽  
Author(s):  
Bang Hung Tsao ◽  
Jacob Lawson ◽  
James D. Scofield
Keyword(s):  
Ohmic Contacts ◽  
High Vacuum ◽  
Surface Region ◽  
Contact Layer ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Main Observation ◽  
The Stability ◽  
P Type ◽  
Contact Resistivities

AlNi and Ni2Si based ohmic contacts to p-type 4H-SiC have been produced using low energy ion implantation, a Ti contact layer, and sequential anneals. Low resistivities were promoted by degenerately (>1020 cm-3) doping the surface region of 4H-SiC epilayers via Al+ implantation. High acceptor activation and improved surface morphology was achieved by capping the samples with pyrolized photoresist and using a two-step anneal sequence in argon. Ti/AlNi/W and Ti/Ni2Si/W stacks of varying Ti and/or binary layer thickness were compared at varying anneal temperatures. AlNi based samples reliably and repeatedly achieved specific contact resistivities as low as 5.5 x10-5 ohm-cm2 after annealing at temperatures of 700-1000°C. For the Ni2Si samples, resistivities as low 4.5x10-4 ohm-cm2 were reached after annealing between 750 and 1100°C. Similarly, a set of Ti/AlNi/Au samples, with or without Ge as an additional contact layer, were prepared via the same procedures. In this case, specific contact resistivities as low as 5.0 x10-4 ohm-cm2 were achieved after annealing the Ti/AlNi/Au samples between 600 and 700°C for 30 minutes in a dynamic argon atmosphere or under high vacuum. The lowest resistivities were realized using thicker (~ 40 nm) Ti layers. I-V analysis revealed superior linear characteristics for the AlNi system, which also exhibited a more stable microstructure after anneal. SIMS and RBS were used to analyze the stability of the stacks subsequent to thermal treatment. AFM analysis demonstrated the superiority of photoresist capping over alternatives in minimizing surface roughness. Linear ohmic behavior after significantly reduced anneal temperature is the main observation of the present study.

Improved Ohmic Contacts to n-Type GaAs, Using Oiboride Diffusion Barriers

1985 ◽  
Vol 54 ◽  
Author(s):  
Joel R. Shappirio ◽  
Robert A. Lux ◽  
John J. Finnegan ◽  
Donald C. Fox ◽  
Joseph H. Kwiatkowski
Keyword(s):  
Diffusion Barrier ◽  
Ohmic Contacts ◽  
Diffusion Barriers ◽  
Specific Contact ◽  
Contact Resistivities

ABSTRACTOhmic contacts employing Au/Metal/Au/Ge/Ni (Metal=Ni or. TiB2) to n-type GaAs have been investigated. Alloying of the contacts, performed by both optical (rapid thermal) and strip heater methods, resulted in very low specific contact resistivities for the samples employing the TiB2 diffusion barrier. Such contacts are shown to be stable on aging at 350C for 180 hours.

Thermally stable In-based ohmic contacts to p-type GaAs

2020 ◽  
pp. 179-222
Author(s):  
P.-E. Hallali ◽  
Masanori Murakami ◽  
W. H. Price ◽  
M. H. Norcott
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
P Type

Electrical properties of thermally stable Pt/Re/Au ohmic contacts to p-type GaN

2004 ◽  
Vol 48 (9) ◽  
pp. 1563-1568 ◽  
Author(s):  
V Rajagopal Reddy ◽  
Sang-Ho Kim ◽  
June-O Song ◽  
Tae-Yeon Seong
Keyword(s):  
Electrical Properties ◽  
Ohmic Contacts ◽  
Thermally Stable ◽  
P Type

Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

1990 ◽  
Vol 181 ◽  
Author(s):  
V. Krishnamurthy ◽  
A. Simmons ◽  
C. R. Helms
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interfacial Chemistry ◽  
Interfacial Layers ◽  
Ohmic Behavior ◽  
P Type ◽  
Thin Plasma

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

Low Resistance and Thermally Stable Pt/Ru Ohmic Contacts to p-Type GaN

2000 ◽  
Vol 180 (1) ◽  
pp. 103-107 ◽  
Author(s):  
Ja-Soon Jang ◽  
Seong-Ju Park ◽  
Tae-Yeon Seong
Keyword(s):  
Ohmic Contacts ◽  
Thermally Stable ◽  
Low Resistance ◽  
P Type

Diffusion Barrier with Reactively Sputtered TiN Film for Thermally Stable Contact in Advanced VLSI

1988 ◽  
Author(s):  
Katsunori MITSUHASHI ◽  
Osamu YAMAZAKI ◽  
Atsuhisa INOUE ◽  
Tatsuo MORITA ◽  
Koui OHTAKE ◽  
...  
Keyword(s):  
Diffusion Barrier ◽  
Thermally Stable ◽  
Tin Film
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