Au Ohmic Contacts to P-Type Hg1-xCdxte Utilizing Thin Interfacial Layers

1990 ◽  
Vol 181 ◽  
Author(s):  
V. Krishnamurthy ◽  
A. Simmons ◽  
C. R. Helms
Keyword(s):  
Interfacial Layer ◽  
Ohmic Contacts ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interfacial Chemistry ◽  
Interfacial Layers ◽  
Ohmic Behavior ◽  
P Type ◽  
Thin Plasma

ABSTRACTOhmic behavior is observed in electroless Au contacts to p -type Hg1−xCdxTe. Our investigation of the interfacial chemistry of such contacts suggest that this ohmic behavior may be due to the presence of a Te,O, and CI layer. To verify this correlation with interfacial chemistry, thin plasma oxide layers were used in evaporated Au contacts. The annealed plasma oxidized contacts exhibited low contact resistances. This behavior was attributed to a low interface state density at the interfacial layer/Hg1−xCdxTe interface. In comparison, as-deposited and annealed Au contacts without a thin interfacial layer were rectifying with a large barrier height.

Interface-State-Density Evaluation of p-type and n-type Ge/GeNx Structures by Conductance Technique

2013 ◽  
Vol 133 (7) ◽  
pp. 1279-1284
Author(s):  
Takuro Iwasaki ◽  
Toshiro Ono ◽  
Yohei Otani ◽  
Yukio Fukuda ◽  
Hiroshi Okamoto
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Interface State Density Evaluation of p-Type and n-Type Ge/GeNxStructures by Conductance Technique

2015 ◽  
Vol 98 (6) ◽  
pp. 8-15
Author(s):  
TAKURO IWASAKI ◽  
TOSHIRO ONO ◽  
YOHEI OTANI ◽  
YUKIO FUKUDA ◽  
HIROSHI OKAMOTO
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Conductance Technique ◽  
Density Evaluation ◽  
P Type

Extraction of interface state density and resistivity of suspended p-type silicon nanobridges

2013 ◽  
Vol 34 (5) ◽  
pp. 052002 ◽  
Author(s):  
Jiahong Zhang ◽  
Qingquan Liu ◽  
Yixian Ge ◽  
Fang Gu ◽  
Min Li ◽  
...  
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Type Silicon ◽  
P Type

High Permittivity Oxide Gate Stacks on Silicon Incorporating UHV Silicon Nitride Interfacial Layers

2001 ◽  
Vol 670 ◽  
Author(s):  
Mark A. Shriver ◽  
Ann M. Gabrys ◽  
T. K. Higman ◽  
S. A. Campbell
Keyword(s):  
Oxide Thickness ◽  
Interface State ◽  
Nitride Layer ◽  
State Density ◽  
Interface State Density ◽  
Equivalent Oxide Thickness ◽  
Gate Stacks ◽  
High Permittivity ◽  
Interfacial Layers ◽  
Thermal Nitridation

ABSTRACTCurrent high permittivity material deposition techniques produce a low permittivity oxide interfacial layer consequently increasing the equivalent oxide thickness. This interfacial oxide layer can be prevented by initially growing a thin nitride layer to act as a diffusion barrier. The interfacial nitride layer must also have low interface state densities comparable to state-of-the-art SiO2 insulators in order to be suitable for MOSFETs. The nitride layer used in this study was formed by thermal nitridation in a UHV system, with the subsequent high permittivity deposition done in an adjoining system. After forming capacitors from these films, capacitance vs. voltage (C-V) techniques were used to determine the interface state density and equivalent oxide thickness of the films. Gate stack films were produced on Si(100) and Si(111) and the results are compared. Gate stacks on Si(100) show a slight increase in stretchout in the high frequency C-V curves for both n-type and p-type samples. Initial data suggests that Si(111) has a lower interface state density than the Si(100) gate stacks. This may be attributed to the Si3N4layer on Si(111) being epitaxial nitride.

scholarly journals Interface-state density estimation of n-type nanocrystalline FeSi 2 /p-type Si heterojunctions fabricated by pulsed laser deposition

2017 ◽  
Vol 8 (3) ◽  
pp. 035016
Author(s):  
Adison Nopparuchikun ◽  
Nathaporn Promros ◽  
Phongsaphak Sittimart ◽  
Peeradon Onsee ◽  
Asanlaya Duangrawa ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Density Estimation ◽  
Pulsed Laser ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Laser Deposition ◽  
P Type

Metal‐insulator‐semiconductor structures on p‐type GaAs with low interface state density

1996 ◽  
Vol 69 (2) ◽  
pp. 230-232 ◽  
Author(s):  
Zhi Chen ◽  
Dae‐Gyu Park ◽  
Francke Stengal ◽  
S. Noor Mohammad ◽  
Hadis Morkoç
Keyword(s):  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Structures ◽  
P Type

Demonstration of HfO2-Based Gate Dielectric With Low Interface State Density and Sub-nm EOT on Ge by Incorporating Ti Into Interfacial Layer

2019 ◽  
Vol 40 (2) ◽  
pp. 174-176
Author(s):  
Yi-He Tsai ◽  
Chen-Han Chou ◽  
Yun-Yan Chung ◽  
Wen-Kuan Yeh ◽  
Yu-Hsien Lin ◽  
...  
Keyword(s):  
Interfacial Layer ◽  
Gate Dielectric ◽  
Interface State ◽  
State Density ◽  
Interface State Density

Asymmetric Interface Densities on n and p Type GaN MOS Capacitors

2006 ◽  
Vol 527-529 ◽  
pp. 1525-1528
Author(s):  
W. Huang ◽  
T. Khan ◽  
T. Paul Chow
Keyword(s):  
Density Distribution ◽  
Valence Band ◽  
Conduction Band ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
Plasma Enhanced Cvd ◽  
P Type

Both n-type and p-type GaN MOS capacitors with plasma-enhanced CVD-SiO2 as the gate oxide were characterized using both capacitance and conductance techniques. From a n type MOS capacitor, an interface state density of 3.8×1010/cm2-eV was estimated at 0.19eV near the conduction band and decreases deeper into the bandgap while from a p type MOS capacitor, an interface state density of 1.4×1011/cm2-eV 0.61eV above the valence band was estimated and decreases deeper into the bandgap. Unlike the symmetric interface state density distribution in Si, an asymmetric interface state density distribution with lower density near the conduction band and higher density near the valence band has been determined.

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