Formation of Self-Affine Surface During the Growth of Nickel Thin Films

1994 ◽  
Vol 367 ◽  
Author(s):  
M.V.H. Rao ◽  
V. Srinivas ◽  
B.K. Mathur ◽  
K.L. Chopra
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Surface Structure ◽  
Film Growth ◽  
The Self ◽  
Affine Surface ◽  
Nickel Thin Films ◽  
Topographic Data ◽  
Shape And Size

AbstractThin films of nickel deposited on various substrates have been investigated by using an STM. Topographic data recorded at different stages of the film growth reveal that the surface structure at one location of the film resemble that at another location of the same film. The repetitive structures are made up of a few coalescing clusters and forming exactly similar looking islands. As the film thickness increases, the shape and size of these repetitive patterns changes but the self-affinity of the surface structure is maintained.

Surface structure and composition of flat titanium thin films as a function of film thickness and evaporation rate

2005 ◽  
Vol 250 (1-4) ◽  
pp. 252-267 ◽  
Author(s):  
Kaiyong Cai ◽  
Michael Müller ◽  
Jörg Bossert ◽  
Annett Rechtenbach ◽  
Klaus D. Jandt
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Surface Structure ◽  
Evaporation Rate ◽  
Titanium Thin Films

Formation of Nanoparticles in Zr and Dy Doped YBCO MOD Superconducting Films

2011 ◽  
Vol 700 ◽  
pp. 15-18
Author(s):  
James A. Xia ◽  
Nick M. Strickland ◽  
Evgueni F. Talantsev ◽  
Nick J. Long
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Formation Mechanism ◽  
Film Growth ◽  
Precursor Solution ◽  
Superconducting Films ◽  
Metal Organic ◽  
Metal Organic Deposition ◽  
Precursor Layer ◽  
Dy Doping

We study the formation mechanism of nanoparticles in thin films of the superconductor YBa2Cu3O7-δ(YBCO). We form the films by metal-organic deposition (MOD) on buffered, textured metal substrates. Through the addition of Dy or Zr salts to the precursor solution we precipitate (Y,Dy)2O3and BaZrO3nanoparticles, uniformly distributed through the film thickness. By quenching samples during the film growth, we show the nanoparticles form in the precursor layer before YBCO growth. The size of the nanoparticles was quantitatively analysed by TEM. We found that Zr doping produces smaller nanoparticles than Dy doping.

Surface Roughness and Growth Texture of (Ba,Sr)TiO3 Thin Films Formed by MOCVD

1998 ◽  
Vol 541 ◽  
Author(s):  
Y. Gao ◽  
P. Alluri ◽  
S. He ◽  
M. Engelhard ◽  
A.S. Lea ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Film Thickness ◽  
Film Growth ◽  
Microwave Plasma ◽  
Chemical Vapor ◽  
Pure Oxygen ◽  
Si Substrates ◽  
Direct Liquid Injection ◽  
Plasma Enhancement

AbstractMetalorganic chemical vapor deposition (MOCVD) has been used to grow (Ba,Sr)TiO3 thin films on Ir/SiO2/Si substrates. β-diketonates of Ba, Sr, and Ti were used as the precursors, and delivered to the reactor via direct-liquid injection. Growth rate and film thickness were monitored by in-situ spectroscopic ellipsometry, and determined after growth. Film growth was studied as a function of film thickness, composition, substrate temperature, and mixture of O2 and N2O with and without microwave plasma enhancement. Dense, mirror-like films were obtained under all conditions except when pure oxygen plasma enhancement was used. Surface roughness of the films appears strongly dependent on film thickness and composition. Film composition and growth temperature determine growth texture of the films. This paper describes these results as well as the correlation between these results and dielectric properties.

Effects of Thickness and Indenter Geometry in Nanoindentation of Nickel Thin Films

2003 ◽  
Vol 795 ◽  
Author(s):  
Padma Parakala ◽  
Reza A. Mirshams ◽  
Seifollah Nasrazadani ◽  
Kun Lian
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Indentation Size Effect ◽  
Deformation Mechanisms ◽  
Indentation Size ◽  
Depth Of Penetration ◽  
Nickel Thin Films ◽  
Cube Corner ◽  
Depth Effects ◽  
Indenter Geometry

ABSTRACTEffects of thickness and tip geometry on Ni thin films deposited on Cu substrate were studied using nanoindenter. The deformation mechanisms in correlation to hardness measurements were discussed at various loads and depths of penetration. The Berkovich, Cube corner and Conical tips have been used in this study. Initially, the hardness and modulus of elasticity were measured at a depth of 10% of film thickness. The depth of penetration was increased to 20% to observe the depth effects. Analysis of data showed that there is an Indentation Size Effect (ISE) irrespective of indenter tip geometries.

Molecular Beam Epitaxy of Boron Nitride Thin Films and Their Analytical Characterization

1994 ◽  
Vol 363 ◽  
Author(s):  
Robert F. Davis ◽  
Daniel J. Kester ◽  
K. Shawn Ailey
Keyword(s):  
Thin Films ◽  
Boron Nitride ◽  
Film Thickness ◽  
Substrate Temperature ◽  
Film Growth ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Intrinsic Stress ◽  
Cubic Phase

AbstractBoron nitride (BN) thin films have been grown on the (100) surfaces of Si, diamond, Ni and Cu via ion beam assisted deposition (IBAD) using electron beam evaporation of B in tandem with N and Ar ion bombardment within the ranges of substrate temperature and ion flux of 200–700°C and 0.20–0.30 mA/Cm2, respectively, Fourier-transform infrared spectroscopy (FTIR) and high resolution transmission electron microscopy (HRTEM) revealed a growth sequence of amorphous (a-BN), hexagonal (h-BN) and cubic (c-BN) layers on Si and diamond under most conditions. This sequence is attributed primarily to increasing biaxial compressive stress with film thickness due to interstitial Ar incorporation observed via Rutherford backscattering spectroscopy (RBS). The effect of deposition conditions, specifically substrate temperature and bombardment intensity, on the film growth was studied. Increasing the substrate temperature above 400°C led to the onset of the cubic phase at a greater film thickness, while increased ion flux led to earlier growth of this phase. These results may be explained by the relaxation of intrinsic stress in the films at higher temperatures due to increased adatom mobility and to increased intrinsic stress in the films resulting from increased ion bombardment, respectively. Lower temperatures led to mixed phase growth. A minimum substrate temperature (200–300°C) is required for nucleation and growth of single phase c-BN by this technique. A combination of h-BN and c-BN was deposited on Ni; only h-BN was obtained on Cu substrates.

Self-poling Effects in Sol-gel Derived Pb(Zr1-xTix)O3 Thin Films

2002 ◽  
Vol 748 ◽  
Author(s):  
Jinrong Cheng ◽  
Nan Li ◽  
L. Eric Cross ◽  
Zhongyan Meng
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Piezoelectric Effect ◽  
Sol Gel ◽  
Bias Field ◽  
The Self ◽  
Pzt Thin Films ◽  
Direct Piezoelectric Effect ◽  
Internal Bias ◽  
Internal Bias Field

ABSTRACTBased on the direct piezoelectric effect, the measurement of piezoelectric module d33 was conducted to examine the self-poling effect in sol-gel derived Pb(Zr1-xTix)O3 (PZT) thin films. It is observed that as-prepared PZT thin films have piezoelectric responses being dependent upon the film thickness and composition. The higher d33 of 26 pC/N is achieved for ∼0.4 μm thick PZT thin films with Zr/Ti ratio of 53/47. The d33 value decreases with increasing the film thickness for as-prepared PZT thin films, however, increases for the same film after external poling. The origin of the self-poling effect was briefly discussed based on the formation of an internal bias field in PZT thin films.

Growth of Cerium Oxide Buffer Layers and Superconducting thin films on Silicon

1992 ◽  
Vol 275 ◽  
Author(s):  
S Amirhaghi ◽  
F Beech ◽  
V Craciun ◽  
A Sajjadi ◽  
M Vickers ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Film Growth ◽  
Wave Length ◽  
Amorphous Layer ◽  
Buffer Layers ◽  
Native Oxide ◽  
Axis Orientation ◽  
Glass Substrates ◽  
Laser Wave

ABSTRACTFilms of CeO2 have been grown on Si and glass substrates using the laser ablation deposition technique. X-ray diffraction measurements for the films deposited on glass indicated that they are the same as films grown on Si covered with the native oxide. This evidence supports a picture in which chemical rather than crystal-lographic effects constrain the film growth. The crystal quality for films grown on Si was shown to improve with increasing film thickness away from the amorphous layer. Low cooling rates as well as reduced film thickness were effective in avoiding the formation of micro-cracks. The surface morphology was shown to be dependent on the laser wave-length as well as the oxygen partial pressure. Thin films of YBa2Cu3O7δ could easily be grown on CeO2/Si showing c-axis orientation, whereas the growth of BiSrCaCuO (2212) on CeO2/Si resulted in the two films mixing with each other.

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

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