Surface structure and composition of flat titanium thin films as a function of film thickness and evaporation rate

2005 ◽  
Vol 250 (1-4) ◽  
pp. 252-267 ◽  
Author(s):  
Kaiyong Cai ◽  
Michael Müller ◽  
Jörg Bossert ◽  
Annett Rechtenbach ◽  
Klaus D. Jandt
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Surface Structure ◽  
Evaporation Rate ◽  
Titanium Thin Films

Formation of Self-Affine Surface During the Growth of Nickel Thin Films

1994 ◽  
Vol 367 ◽  
Author(s):  
M.V.H. Rao ◽  
V. Srinivas ◽  
B.K. Mathur ◽  
K.L. Chopra
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Surface Structure ◽  
Film Growth ◽  
The Self ◽  
Affine Surface ◽  
Nickel Thin Films ◽  
Topographic Data ◽  
Shape And Size

AbstractThin films of nickel deposited on various substrates have been investigated by using an STM. Topographic data recorded at different stages of the film growth reveal that the surface structure at one location of the film resemble that at another location of the same film. The repetitive structures are made up of a few coalescing clusters and forming exactly similar looking islands. As the film thickness increases, the shape and size of these repetitive patterns changes but the self-affinity of the surface structure is maintained.

Stress, Texture and Phase Transformation in Titanium Thin Films

2010 ◽  
Vol 160 ◽  
pp. 109-116 ◽  
Author(s):  
Jay Chakraborty ◽  
Kishor Kumar ◽  
R. Ranjan ◽  
Sandip Ghosh Chowdhury ◽  
S.R. Singh
Keyword(s):  
Thin Films ◽  
Phase Transformation ◽  
Film Thickness ◽  
Film Stress ◽  
Thickness Effect ◽  
Stable Phase ◽  
Face Centered Cubic ◽  
X Ray Diffraction ◽  
Titanium Thin Films ◽  
Face Centered

{111} fiber textured face centered cubic (fcc) titanium has been found to coexist with the {0002} fiber textured hexagonal close packed (hcp) titanium in polycrystalline titanium (Ti) thin films (thickness: 144 nm to 720 nm) deposited on Si (100) substrate by magnetron sputtering. X-ray diffraction investigation confirms that relative phase fraction of such metastable fcc Ti phase decreases with increasing film thickness indicating thickness dependent fcc-hcp phase transformation of titanium. Texture development in hcp Ti phase was due to film microstructure (thickness effect) rather than the phase trans-formation. Diffraction stress analysis (by d-sin2 method) indicates that fcc to hcp phase transformation is also accompanied by the reduction of compressive stress in the hcp Ti phase with increasing film thickness. Strain energy calculations for both phases of titanium indicate that fcc Ti is a more stable phase compared to hcp Ti at relatively low film thickness (144 nm to 432 nm). It has been concluded that film stress favours fcc to hcp phase transformation towards the higher film thickness. Reverse transformation (hcp to fcc) occurs towards the lower film thickness.

scholarly journals The Increase in Thickness Uniformity of Films Obtained by Magnetron Sputtering with Rotating Substrate

2016 ◽  
Vol 3 (3) ◽  
pp. 100-104 ◽  
Author(s):  
D. Golosov ◽  
S. Melnikov ◽  
S. Zavadski ◽  
V. Kolos ◽  
J. Okojie
Keyword(s):  
Experimental Data ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Thickness Distribution ◽  
Model Error ◽  
Film Deposition ◽  
Substrate Rotation ◽  
Titanium Thin Films ◽  
Simulation Results

The titanium thin films obtained by magnetron sputtering with the rotating substrate at different distances between the substrate and magnetron centers were studied with regard to the uniformity of the film thickness distribution. On the basis of the experimental data obtained, the model for the magnetron film deposition during substrate rotation was developed. The analysis of the simulation results shows that the model error is not greater than 10%.

scholarly journals Effect of film thickness and evaporation rate on co-evaporated SnSe thin films for photovoltaic applications

RSC Advances ◽  
2020 ◽  
Vol 10 (28) ◽  
pp. 16749-16755
Author(s):  
Zeng Li ◽  
Yixin Guo ◽  
Fei Zhao ◽  
Chengqi Nie ◽  
Hongkai Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Evaporation Rate ◽  
Evaporation Method ◽  
Photovoltaic Applications

SnSe thin films were deposited by a co-evaporation method with different film thicknesses and evaporation rates.

Giant Anisotropy of Conductivity in Hydrogenated Nanocrystalline Silicon Thin Films

1998 ◽  
Vol 536 ◽  
Author(s):  
A. B. Pevtsov ◽  
N. A. Feoktistov ◽  
V. G. Golubev
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Percolation Theory ◽  
Nanocrystalline Silicon ◽  
Spatial Light Modulators ◽  
Light Emitting ◽  
Light Modulators ◽  
Silicon Thin Films ◽  
Longitudinal Conductivity ◽  
Transverse Conductivity

AbstractThin (<1000 Å) hydrogenated nanocrystalline silicon films are widely used in solar cells, light emitting diodes, and spatial light modulators. In this work the conductivity of doped and undoped amorphous-nanocrystalline silicon thin films is studied as a function of film thickness: a giant anisotropy of conductivity is established. The longitudinal conductivity decreases dramatically (by a factor of 109 − 1010) as the layer thickness is reduced from 1500 Å to 200 Å, while the transverse conductivity remains close to that of a doped a- Si:H. The data obtained are interpreted in terms of the percolation theory.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

scholarly journals Emergence and Evolution of Crystallization in TiO2 Thin Films: A Structural and Morphological Study

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1409
Author(s):  
Ofelia Durante ◽  
Cinzia Di Giorgio ◽  
Veronica Granata ◽  
Joshua Neilson ◽  
Rosalba Fittipaldi ◽  
...  
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Transition Metal Oxides ◽  
Annealing Temperature ◽  
Morphological Properties ◽  
Degree Of Crystallinity ◽  
Tio2 Thin Films ◽  
Force Microscopy ◽  
Heat Treated ◽  
Complementary Techniques

Among all transition metal oxides, titanium dioxide (TiO2) is one of the most intensively investigated materials due to its large range of applications, both in the amorphous and crystalline forms. We have produced amorphous TiO2 thin films by means of room temperature ion-plasma assisted e-beam deposition, and we have heat-treated the samples to study the onset of crystallization. Herein, we have detailed the earliest stage and the evolution of crystallization, as a function of both the annealing temperature, in the range 250–1000 °C, and the TiO2 thickness, varying between 5 and 200 nm. We have explored the structural and morphological properties of the as grown and heat-treated samples with Atomic Force Microscopy, Scanning Electron Microscopy, X-ray Diffractometry, and Raman spectroscopy. We have observed an increasing crystallization onset temperature as the film thickness is reduced, as well as remarkable differences in the crystallization evolution, depending on the film thickness. Moreover, we have shown a strong cross-talking among the complementary techniques used displaying that also surface imaging can provide distinctive information on material crystallization. Finally, we have also explored the phonon lifetime as a function of the TiO2 thickness and annealing temperature, both ultimately affecting the degree of crystallinity.

scholarly journals Experimental Study on the Thickness-Dependent Hardness of SiO2 Thin Films Using Nanoindentation

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Integrated Circuits ◽  
Film Thickness ◽  
Depth Range ◽  
Micro Electro Mechanical Systems ◽  
Si Substrates ◽  
Sio2 Thin Film ◽  
Average Grain Size

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.

scholarly journals Precise control of Jeff=12 magnetic properties in Sr2IrO4 epitaxial thin films by variation of strain and thin film thickness

2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Film Thickness ◽  
Epitaxial Thin Films ◽  
Thin Film Thickness ◽  
Precise Control
Sign in / Sign up

Export Citation Format

Share Document