Microscopic relaxation channels in materials for superconducting qubits

Despite mounting evidence that materials imperfections are a major obstacle to practical applications of superconducting qubits, connections between microscopic material properties and qubit coherence are poorly understood. Here, we combine measurements of transmon qubit relaxation times (T1) with spectroscopy and microscopy of the polycrystalline niobium films used in qubit fabrication. By comparing films deposited using three different techniques, we reveal correlations between T1 and intrinsic film properties such as grain size, enhanced oxygen diffusion along grain boundaries, and the concentration of suboxides near the surface. Qubit and resonator measurements show signatures of two-level system defects, which we propose to be hosted in the grain boundaries and surface oxides. We also show that the residual resistance ratio of the polycrystalline niobium films can be used as a figure of merit for qubit lifetime. This comprehensive approach to understanding qubit decoherence charts a pathway for materials-driven improvements of superconducting qubit performance.

Effect of K Substitutions on Structural and Superconducting Properties in Bi1.6Pb0.4Sr2-xKxCa2Cu3O10+ Compounds

Effect of K substitutions on structural and superconducting properties in Bi-Pb-Sr-Ca-Cu-O (BPSCCO) system has been investigated. Bulk Bi1.6Pb0.4Sr2-xKxCa2Cu3O10+d (where x = 0.00; 0.04; 0.08 and 0.1) samples were fabricated by using the solid-state reaction method. Structural properties of the samples were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive spectroscopy (EDS) measurement. All samples showed co-existence of Bi-2223 and Bi-2212 superconducting phases. Interestingly, a formation of the Bi-2223 was decelerated and that of the Bi-2212 was accelerated with increasing K content (x). Superconducting properties of the samples were characterized by using temperature dependences of resistance and field dependences of magnetization data. Both onset and offset transition temperatures were found to decrease, those were correlated to the decreases in residual resistance ratio (RRR). The 65 K magnetization curves of K- substituted samples were enlarged in comparison with that of the pure one. Enlargements of the magnetization curves were possibly attributed to the appearance of additional point-like defects generated by substitutions of K into Sr site. Keywords: BPSCCO, substitutions, flux pinning, defects.

A CLOSE CORRELATION BETWEEN DISORDERS-DEFECTS AND SUPERCONDUCTING TRANSITION TEMPERATURE OF Bi1.6Pb0.4Sr2Ca2-xNaxCu3O10+δ SUPERCONDUCTORS

The enhancements of zero superconducting transition temperature (Tc,0) in Bi1.6Pb0.4Sr2Ca2-xNaxCu3O10+δ(BPSCCO) are reported. The BPSCCO samples (with x ranging from 0.00 to 0.06) were prepared by using the conventional solid state reaction technique. The properties of the samples were examined by using the X-ray diffraction (XRD), scanning electron microscopy (SEM), and the resistance versus temperature (R-T) measurements. From the XRD resuts, all samples revealed the orthorhombic structure, and the volume fraction of the Bi-2223 phase was varied as increasing x, and reached the maximum value of 82.72 % for x = 0.05 sample. Improvements of connectivity between the Bi-2223 grains in the Na-substituted BPSCCO samples were obtained by using the surface SEM images and a quantitive analysis of a correlation between Tc,0 and residual resistance ratio (RRR). A similar variation of Tc,0 of the samples as increasing x was observed. The highest Tc,0 enhancement of 107.5 K was obtained for x = 0.05 sample. Variations of the hole carrier concentrations in the CuO2 layers were investigated, which also showed the highest value achieved for x = 0.05 sample.

Effect of Interfaces and Cr Diffusion on Stabilizing Cu Conductivity in Nb3Sn-Strands

The structure of high-purity copper and stabilizing copper of Cr-plated Nb3Sn-strands with different RRR (residual resistance ratio) values has been studied. Cr diffusion into peripheral layers of stabilizing Cu has been revealed. The variations of RRR and Cr content in Cu at annealing have been estimated. It is demonstrated that an additional drop of RRR may be caused by oxygen diffusion from Cr coating obtained by electroplating. Optimal regimes of the diffusion annealing of Cr-plated Nb3Sn-strands for ITER (International Thermonuclear Experimental Reactor) have been determined.

The Study of SiC Substrate MgB2 thick Films Growing along C Axis

We have fabricated MgB2 thick films on SiC substrates growing along c axis by using hybrid physical–chemical vapor deposition (HPCVD) technique. The thickness was 8μm. Electric measurement showed that the Tc (onset) was 41.4K, and the transition width was 0.5K, the residual resistance ratio (RRR) was near 7. Magnetic measurement showed that the critical current density was 1.7×106A/cm2 at 5K in a self field.