Be diffusion in InGaAs epitaxial layers during rapid thermal annealing: an effective diffusivity approach and a nonequilibrium model

2002 ◽  
Author(s):  
J. Marcon ◽  
S. Koumetz ◽  
K. Ketata ◽  
M. Ketata ◽  
P. Launay
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Diffusivity ◽  
Epitaxial Layers ◽  
Nonequilibrium Model

Studies of Oxygen Introduced During Thermal Oxidation and Defects Induced by Rapid Thermal Annealing in Silicon Epitaxial Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
Akira Usami ◽  
Taichi Natori ◽  
Akira Ito ◽  
Takahide Sugiyama ◽  
Seiya Hirota ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layer ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Epitaxial Layers ◽  
Shallow Trap ◽  
Transient Spectroscopy

AbstractIntroduction of oxygen during thermal oxidation and production of defects by rapid thermal annealing (RTA) in n-type epitaxial Si layers were studied with deep-level transient spectroscopy measurements. We use oxygen-related thermal donors (TDs) as a monitor for introduction of oxygen in silicon epitaxial layers. It is found that oxygen is introduced from the substrate into the epitaxial layer after thermal annealing. The TD was almost annihilated by RTA at .700°C. However, a shallow trap (Ec−0.073±0.005 eV) was induced by RTA.

Fast and Slow Vacancies in Silicon

2013 ◽  
Vol 205-206 ◽  
pp. 157-162 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Strong Evidence ◽  
Proton Irradiation ◽  
Effective Diffusivity ◽  
The Self ◽  
Equilibrium Conditions ◽  
Silicon Crystals ◽  
Oxide Precipitate

Vacancies (and probably also self-interstitials) in silicon appear to exist in several forms (atomic configurations) some of them being fast diffusers and other slow diffusers. The data on enhanced self-diffusivity under proton irradiation, on vacancy and oxide precipitate profiles installed by Rapid Thermal Annealing, and on the self-diffusivity under equilibrium conditions suggest that there are at least two kinds of vacancy: 1) Vw- a fast-diffusing localized vacancy manifested in electron irradiated samples (Watkins vacancy), 2) Vs- a slow-diffusing extended vacancy manifested under hot proton irradiation. In RTA experiments, these two species behave as one equilibrated subsystem of a moderate effective diffusivity intermediate between those of Vwand Vs. There is also strong evidence in favor of a third kind of vacancy: Vfa fast extended species, which controls the grown-in voids in silicon crystals.

Effects of Rapid Thermal Annealing on Heavily Boron Doped Silicon Epitaxial Layers

1994 ◽  
Vol 355 ◽  
Author(s):  
Jianbao Wang ◽  
Qiang Xu ◽  
Fang Lu ◽  
Henghui Sun ◽  
Xun Wang
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layers ◽  
Boron Doped ◽  
Doped Silicon

Rapid thermal annealing of rare earth implanted ZnO epitaxial layers

2011 ◽  
Vol 33 (7) ◽  
pp. 1139-1142 ◽  
Author(s):  
S.M.C. Miranda ◽  
M. Peres ◽  
T. Monteiro ◽  
E. Alves ◽  
H.D. Sun ◽  
...  
Keyword(s):  
Rare Earth ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Epitaxial Layers

L10 Ordering of FePt Thin Films by Rapid Thermal Annealing

2003 ◽  
Vol 27 (11) ◽  
pp. 1083-1086 ◽  
Author(s):  
H. Ito ◽  
T. Kusunoki ◽  
H. Saito ◽  
S. Ishio
Keyword(s):  
Thin Films ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Fept Thin Films

Effect of a Ti-capped and Ti-mediated Layer on Co Silicide Formation

2002 ◽  
Vol 716 ◽  
Author(s):  
G.Z. Pan ◽  
E.W. Chang ◽  
Y. Rahmat-Samii
Keyword(s):  
Electron Diffraction ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Diffusion Barrier ◽  
Silicide Formation ◽  
Plan View ◽  
Processing Window

AbstractWe comparatively studied the formation of ultra thin Co silicides, Co2Si, CoSi and CoSi2, with/without a Ti-capped and Ti-mediated layer by using rapid thermal annealing in a N2 ambient. Four-point-probe sheet resistance measurements and plan-view electron diffraction were used to characterize the silicides as well as the epitaxial characteristics of CoSi2 with Si. We found that the formation of the Co silicides and their existing duration are strongly influenced by the presence of a Ti-capped and Ti-mediated layer. A Ti-capped layer promotes significantly CoSi formation but suppresses Co2Si, and delays CoSi2, which advantageously increases the silicidation-processing window. A Ti-mediated layer acting as a diffusion barrier to the supply of Co suppresses the formation of both Co2Si and CoSi but energetically favors directly forming CoSi2. Plan-view electron diffraction studies indicated that both a Ti-capped and Ti-mediated layer could be used to form ultra thin epitaxial CoSi2 silicide.

Effect of rapid thermal annealing on sprayed Cu2SnS3 thin films for solar-cell application

2020 ◽  
Vol 59 (10) ◽  
pp. 105503
Author(s):  
Wafaa Magdy ◽  
Ayaka Kanai ◽  
F. A. Mahmoud ◽  
E. T. El Shenawy ◽  
S. A. Khairy ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Solar Cell Application
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