Niobium Nitride Thin Films Deposition using Radical Beam Assisted Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
Ivan H. Murzin ◽  
Nobuyuki Hayashl ◽  
Isao Sakamoto ◽  
Matsataka Ohkubo
Keyword(s):  
Thin Films ◽  
Plasma Source ◽  
Niobium Nitride ◽  
Electron Gun ◽  
Nitride Film ◽  
Equiatomic Composition ◽  
Deposition Technique ◽  
Vapor Source ◽  
Ecr Plasma ◽  
Excited Species

AbstractWe have employed a radical beam assisted deposition technique to prepare single-crystalline niobium nitride thin films on MgO (100) substrates. The radical beam containing excited species of nitrogen was produced by an ECR plasma source and used to irradiate the growing Nb film, which was simultaneously deposited by an electron-gun vapor source. The nitride film was found to grow epitaxially on the substrates heated to 600 – 650°C. It has resulted in the formation of NbN having predominantly Bl structure, resistivity of 44 (μΩcm at 20 K, and almost equiatomic composition.

Homo and Heteroepitaxial Growth of LiTaO3 and LiNbO3 by Mbe

1995 ◽  
Vol 401 ◽  
Author(s):  
Z. Sitar ◽  
F. Gitmans ◽  
W. Liu ◽  
P. Günter
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Plasma Source ◽  
Heteroepitaxial Growth ◽  
Ecr Plasma ◽  
Superlattice Structure ◽  
Crystalline Films ◽  
Bilayer Period

AbstractThin films and superlattices of LiTaO3 and LiNbO3 were grown on (0001) LiTaO3 and LiNbO3 wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900°C. Films were caxis oriented but showed in-plane 60° rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO3. It showed well defined interfaces and appeared to be strained.

Using Electron Cyclotron Resonance Plasma for Depositing Epitaxial Titanium Nitride Thin Films

1995 ◽  
Vol 396 ◽  
Author(s):  
I.H. Murzin ◽  
N. Hayashi ◽  
I. Sakamoto
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Cyclotron Resonance ◽  
Room Temperature ◽  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Electron Cyclotron ◽  
X Ray Diffraction ◽  
Ecr Plasma ◽  
Positive Voltage

AbstractWe have employed a 2.45 GHz electron cyclotron resonance (ECR) plasma source to deposit single-crystal thin films of titanium nitride onto MgO substrates of (100) orientation. During deposition the ECR plasma beam delivering a mixture of excited species of molecular and atomic nitrogen ions, strikes a substrate while an electron beam deposits on the same substrate species of titanium. We have studied the formation of films at substrate temperatures of 200, 400, and 600°C, as well as at room temperature. X-Ray diffraction (XRD) revealed that a cubic Bl phase of titanium nitride forms predominantly at all the temperatures explored. Both channeling and Rutherford backscattering spectroscopy (RBS) showed epitaxial layers forming at the temperature as low as 400°C. The minimum relative backscattering yield, χmin decreased as the temperature increased, with the best result of 7.3% obtained for the film deposited at 600°C. Biasing the substrates with either negative or positive voltage at room temperature directly affects film crystallography.

Possibility of Growing Alloy Thin Film by Using Prepared Alloyed Powder in Electron Gun Deposition Technique

2013 ◽  
Vol 829 ◽  
pp. 441-445
Author(s):  
Hossein Raanaei ◽  
Sadeq Abbasi
Keyword(s):  
Thin Films ◽  
Milled Powder ◽  
Electron Gun ◽  
Emission Spectrometry ◽  
Powder Materials ◽  
Alloy Thin Film ◽  
Alloyed Powder ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

In this article, we studied feasibility of growing Fe-Ni alloy thin films on both Si and glass substrates by using electron-gun deposition technique. Fe and Ni powders were mechanically alloyed with different percentages by ball mill technique. The final milled powder was used as a source material for depositing process. Powder materials were characterized structurally by using x-ray diffraction whereas grown thin films were analyzed by using x-ray reflectivity. The x-ray diffraction data of milled powder revealed a peak shift compared to the unmilled Ni and Fe peaks resulted in obtaining alloyed material. The distinct Kiessig fringes in the relative length scale are evidence of good layer quality in alloy thin films. The film grown on Si substrate exhibited more extended Kiessig fringes in reflectivity scans and the broadening of diffuse part in rocking curves scan became narrower as compared to the glass substrate; this indicated less interface roughness of the alloyed layer grown on silicon substrate. The chemical composition of the grown material was established through optical emission spectrometry. The results were much close to the percentage of prepared alloyed powder material.

Fabrication and Characterization of NiCr/NiSi Functional Thin Films on Temperature Measurement of Cutter Sensor

2010 ◽  
Vol 431-432 ◽  
pp. 535-538 ◽  
Author(s):  
Yun Xian Cui ◽  
De Shun Yang ◽  
Qi Yong Zeng ◽  
Bao Yuan Sun
Keyword(s):  
Thin Films ◽  
Temperature Measurement ◽  
General Structure ◽  
Plasma Source ◽  
Operation System ◽  
Ecr Plasma ◽  
Small Depth ◽  
Fabrication And Characterization ◽  
Micro Morphology

NiCr/NiSi functional thin films of temperature measurement of cutter sensor were prepared by means of advanced Twinned microwave ECR plasma source enhanced Radio Frequency (RF) reaction non-balance magnetron sputtering technique. Fabrication technologies of NiCr/NiSi thin films were studied. The Compositions, micro-morphology, general structure and depth of NiCr/NiSi thin films were analyzed by means of Electron Probe, SEM, AFM, step profiler and stereo vision micro operation system. The results showed that NiCr/NiSi thin-films were small depth, uniform compact, smooth and good continuity, composition of which was close to target.

Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 716-717
Author(s):  
I. A. Rauf
Keyword(s):  
Thin Films ◽  
Indium Oxide ◽  
Ionic Radius ◽  
Free Carrier ◽  
Electron Gun ◽  
Periodic Lattice ◽  
Oxide Thin Films ◽  
Transmission Electron ◽  
The Difference ◽  
Dopant Atoms

To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

2018 ◽  
Vol 1 (1) ◽  
pp. 26-31 ◽  
Author(s):  
B Babu ◽  
K Mohanraj ◽  
S Chandrasekar ◽  
N Senthil Kumar ◽  
B Mohanbabu
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Electrical Properties ◽  
Gamma Radiation ◽  
Glass Substrate ◽  
Gamma Ray ◽  
Optical And Electrical Properties ◽  
Deposition Technique ◽  
Polycrystalline Structure ◽  
Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

Study on Arc Ion Plating Nitride Films of Microscopic Morphology and Micro-Hardness

2011 ◽  
Vol 306-307 ◽  
pp. 274-279
Author(s):  
Qing Tao ◽  
Yan Wei Sui ◽  
Sun Zhi ◽  
Wei Song
Keyword(s):  
Thin Films ◽  
Steel Substrate ◽  
Nitride Film ◽  
Composition Analysis ◽  
Micro Hardness ◽  
Arc Ion Plating ◽  
Ion Plating ◽  
Tin Thin Films ◽  
Research Procedure ◽  
Microscopic Morphology

AlN and TiN thin films are widely used in electronic devices and acoustic material and other fields because of its unique merit, the preparation of nitride thin films by using the arc ion plating has not been a systematic and deep study. The article presents our research procedure which the AlN and TiN thin films are deposited on stainless steel substrate by arc ion plating (AIP). The characteristics of thin films, for example microstructure, morphology, composition analysis and hardness, are examined and analyzed. The results showed that: Droplet-like particles appear in the microstructure of nitride thin films, and the grain size of droplet-like particles in AlN thin films is greater than in TiN thin films. The micro-hardness of nitride films preparation in experiment has improved significantly, and establish firmly basic for extending the application field of nitride film.

Sign in / Sign up

Export Citation Format

Share Document