Homo and Heteroepitaxial Growth of LiTaO3 and LiNbO3 by Mbe

1995 ◽  
Vol 401 ◽  
Author(s):  
Z. Sitar ◽  
F. Gitmans ◽  
W. Liu ◽  
P. Günter
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Plasma Source ◽  
Heteroepitaxial Growth ◽  
Ecr Plasma ◽  
Superlattice Structure ◽  
Crystalline Films ◽  
Bilayer Period

AbstractThin films and superlattices of LiTaO3 and LiNbO3 were grown on (0001) LiTaO3 and LiNbO3 wafers by molecular beam epitaxy. Solid sources were employed for the evaporation of Li, Ta, and Nb while oxygen was activated in an ECR plasma source. Samples were completely oxidized during the growth as confirmed by quantitative surface analyses. Crystalline films were obtained on both substrates at a growth rate of 0.1 nm/s and substrate temperature of 900°C. Films were caxis oriented but showed in-plane 60° rotational domains. Superlattice structure with a bilayer period of 10 nm was grown on LiNbO3. It showed well defined interfaces and appeared to be strained.

Deposition of Thin SiO2 Films on Polymers as a Hard – Coating using a Microwave – ECR Plasma

1996 ◽  
Vol 430 ◽  
Author(s):  
K. Sano ◽  
H. Tamamaki ◽  
M. Nomura ◽  
S. Wickramanayaka ◽  
Y. Nakanishi ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Low Temperatures ◽  
Film Growth ◽  
Polymer Surfaces ◽  
Hard Coating ◽  
Coating Films ◽  
High Quality ◽  
Ecr Plasma

AbstractSiO2 thin films were deposited on automobile plastics at low temperatures using a microwave activated ECR plasma. Oxygen was used as the plasma gas while tetraethoxysilane (TEOS) was used as the source gas which was introduced into the downstream. In the present investigation high quality SiO2 films were deposited on polycarbonate (PC) and polypropylene (PP) substrates with and without a mesh and the characteristics of hard coating films were studied. The film growth rate increases with the decrease of substrate temperature when a mesh is inserted into the plasma. The irregularities of polymer surfaces could be planarized by the deposition of 1.0 μm thick SiO2 film. The dynamic hardness of PC and PP are increased by the deposition of SiO2 film, however, films deposited on PP is seen to be cracked while that of on PC is crack-free.

Niobium Nitride Thin Films Deposition using Radical Beam Assisted Deposition

1994 ◽  
Vol 354 ◽  
Author(s):  
Ivan H. Murzin ◽  
Nobuyuki Hayashl ◽  
Isao Sakamoto ◽  
Matsataka Ohkubo
Keyword(s):  
Thin Films ◽  
Plasma Source ◽  
Niobium Nitride ◽  
Electron Gun ◽  
Nitride Film ◽  
Equiatomic Composition ◽  
Deposition Technique ◽  
Vapor Source ◽  
Ecr Plasma ◽  
Excited Species

AbstractWe have employed a radical beam assisted deposition technique to prepare single-crystalline niobium nitride thin films on MgO (100) substrates. The radical beam containing excited species of nitrogen was produced by an ECR plasma source and used to irradiate the growing Nb film, which was simultaneously deposited by an electron-gun vapor source. The nitride film was found to grow epitaxially on the substrates heated to 600 – 650°C. It has resulted in the formation of NbN having predominantly Bl structure, resistivity of 44 (μΩcm at 20 K, and almost equiatomic composition.

Deposition of YSZ Thin Films by Liquid Fuel Combustion Chemical Vapor Deposition

2002 ◽  
Author(s):  
Zhigang Xu ◽  
Jag Sankar ◽  
Qiuming Wei ◽  
Jim Lua ◽  
Sergey Yamolenko ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Chemical Vapor Deposition ◽  
Substrate Temperature ◽  
Vapor Deposition ◽  
Liquid Fuel ◽  
Film Growth ◽  
Early Stage ◽  
Chemical Vapor ◽  
Nucleation Density

Thin film of YSZ electrolyte is highly desired to reduce the electrical resistance in SOFCs. YSZ thin Films have been successfully produced using liquid fuel combustion chemical vapor deposition (CCVD) technique. Nucleation of the YSZ particles were investigated based on two processing parameters, i.e., substrate temperature and total-metal-concentration in the liquid fuel. An optimum substrate temperature was found for highest the nucleation density. The nucleation density was increased with the total-metal-concentration. Microstructure evolution of the YSZ particles in the early stage in film growth was also studied. It was found that the particle growth rate was linear with processing time, and the particle orientation was varying with the time in the early stage of the film processing. To enhance the film growth rate, the effect of thermophoresis was studied. By increase the temperature gradient towards substrate, the effect of thermophoresis was enhanced and the film growth is also increased.

TEM studies on the crystal structure of YBa2Cu3O7−x thin films prepared by pulsed laser deposition

1992 ◽  
Vol 7 (9) ◽  
pp. 2333-2336
Author(s):  
H. Takahashi ◽  
K. Ohata ◽  
T. Morishita
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Substrate Bias ◽  
Heteroepitaxial Growth ◽  
Cross Sectional ◽  
Axis Orientation ◽  
Substrate Bias Voltage ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Substrate Surfaces

The crystal structures of YBa2Cu3O7−x thin films deposited on MgO(100) substrates have been investigated by cross-sectional transmission electron microscopy (TEM). At a substrate temperature of 670 °C, Cu–O chains become wavy. Stacking faults are formed between the Cu–O chains. Therefore, the domains with c-axis lattice constants of 15 Å, 27 Å, and 39 Å are observed. By applying a biasing voltage of + 300 V, deviation in the c-axis orientation is reduced compared to that at an unbiased condition; even some grain boundaries remain. Near substrate surfaces, deviation of the c-axis direction from the substrate normal increases with a decreasing substrate temperature from 700 °C to 670 °C. Application of a substrate bias voltage of +300 V improved the heteroepitaxial growth of the c-axis oriented YBa2Cu3O7−x.

Growth of SrS Thin Films by Atomic Layer Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
M. Leskela ◽  
L. Niinistö ◽  
E. Nykänen ◽  
P. Soininen ◽  
M. Tiitta
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Flow Rate ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Source Temperature ◽  
Large Size ◽  
Monolayer Growth ◽  
Purge Gas

ABSTRACTThe growth of strontium sulfide thin films in a flow-type Atomic Layer Epitaxy reactor from Sr(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S has been studied. The growth is independent on flow rate and duration of the purge gas (N2) pulse and it does not depend on the Sr(thd)2 and H2S pulses either provided their amounts are sufficient to saturate the surface. The variables significantly affecting the growth rate are the substrate temperature and source temperature for Sr(thd)2. The observed lower than one monolayer growth rate is mainly due to the large size of the Sr(thd)2 molecule.

The Effects of Substrate Temperature on Optical Properties and Surface Morphology of Nickel Phthalocyanine Thin Films Grown by Organic Evaporator System

2008 ◽  
Vol 55-57 ◽  
pp. 593-596 ◽  
Author(s):  
P. Inchidjuy ◽  
Supakorn Pukird ◽  
J. Nukeaw
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Substrate Temperature ◽  
Absorption Spectra ◽  
X Ray Diffraction ◽  
Electron Energy Level ◽  
Nickel Phthalocyanine ◽  
Structure Surface ◽  
Crystalline Films ◽  
Xrd Patterns

Thin films of Nickel Phthalocyanine (NiPc) are prepared at a base pressure of 10-6 mbar using Organic Evaporator System. The films are deposited onto the glass substrate at various temperatures of 100 0C, 120 0C, 140 0C and 160 0C. Crystalline of NiPc thin films was investigated by X-ray diffraction (XRD) spectroscopy. XRD patterns exhibit to become aggravated crystalline films as monoclinic structure. Surface morphology of NiPc thin films was characterized by field emission scanning electron microscope (FE-SEM). FE-SEM micrographs indicate that fiber-like morphology of NiPc is enhanced with increasing substrate temperature. The optical absorption spectra of these thin films are measured. Present studies reveal that the Q-band of NiPc thin films appears as the change of electron energy level. Absorption spectra obtained from UV-vis of deposited NiPc are declined as the substrate temperature is risen.

Influence of substrate temperature, growth rate and TCO substrate on the properties of CSS deposited CdS thin films

2011 ◽  
Vol 519 (21) ◽  
pp. 7556-7559 ◽  
Author(s):  
J. Schaffner ◽  
E. Feldmeier ◽  
A. Swirschuk ◽  
H.-J. Schimper ◽  
A. Klein ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Rate ◽  
Substrate Temperature ◽  
Temperature Growth ◽  
Cds Thin Films ◽  
Influence Of Substrate
Sign in / Sign up

Export Citation Format

Share Document