Composition and Phase Control for Molybdenum Nitride thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Mandar S. Mudholkar ◽  
Levi T. Thompson
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Arrival Rate ◽  
Molybdenum Nitride ◽  
Effective Energy ◽  
Film Composition ◽  
Ion Beam Assisted Deposition ◽  
Molybdenum Nitrides

AbstractMolybdenum nitrides are active and selective hydrodenitrogenation (HDN) catalysts. The catalytic properties of molybdenum nitrides were found to be dependent on the structural properties. The purpose of research described in this paper was to synthesize molybdenum nitride thin films with well defined structures and stoichiometries using ion beam assisted deposition. The films were deposited by evaporating Mo metal, and simultaneously bombarding the growing film with low energy nitrogen ions. The phase constituents of the films were determined using x-ray diffraction and the film composition was obtained by Rutherford backscattering spectrometry.The film composition and phase constituents were strong functions of the ion-to-atom arrival rate ratio, ion energy and ion angle of incidence. Differences in the film composition for different arrival rate ratios and ion angles of incidence were interpreted based on reflection and sputtering effects. Our results suggest that phase formation was governed by the effective energy density per deposited atom. Evaluation of the effective energy density per deposited atom and its physical significance in ion beam assisted deposition is discussed.

MeV Ion Beam Bombardments Effects on the Thermoelectric Properties of Zn4Sb3 / CeFe(4-x)CoxSb12 Nano-Layered Superlattices

2006 ◽  
Vol 974 ◽  
Author(s):  
S. Budak ◽  
C. C. Smith ◽  
B. Zheng ◽  
C. I. Muntele ◽  
R. L. Zimmerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Energy Conversion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Electrical Energy ◽  
3Ω Method ◽  
Ion Beam Assisted Deposition ◽  
Before And After ◽  
Conductivity Of Thin Films

ABSTRACTWe prepared multilayers of semiconducting half-heusler β-Zn4Sb3 and skutterudites CeFe(4-x)CoxSb12 compound thin films by ion beam assisted deposition (IBAD) system for the application of thermoelectric (TE) materials. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of thin films. The thin films were then bombarded by 5 MeV Si ions for generation of nanodots in the films. We measured the cross-plane thermal conductivity by a house developed 3ω-method system, cross-plane Seebeck coefficient by a (MMR) Seebeck system, and cross plane electrical conductivity of these nanolayered systems by a (MMR) Hall system before and after bombardment. Both β-Zn4Sb3 and CeFe(4-x)CoxSb12 systems have been identified as promising thermoelectric materials for the application of thermal-to-electrical energy conversion. The nanodots produced by MeV ion beam can cause significant change in both electrical and thermal conductivity of thin films, thus improving the efficiency. The MeV ion-beam bombardment resulted in decrease in the thermal conductivity of thin films and increase in the efficiency of thermal-to-electrical energy conversion.

Plasmonic properties of titanium nitride thin films prepared by ion beam assisted deposition

2016 ◽  
Vol 185 ◽  
pp. 295-298 ◽  
Author(s):  
Lin-Ao Zhang ◽  
Hao-Nan Liu ◽  
Xiao-Xia Suo ◽  
Shuo Tong ◽  
Ying-Lan Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Titanium Nitride ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition

Optical and electrical properties of p-type zinc oxide thin films synthesized by ion beam assisted deposition

2005 ◽  
Vol 492 (1-2) ◽  
pp. 203-206 ◽  
Author(s):  
Zhi Yan ◽  
Zhi Tang Song ◽  
Wei Li Liu ◽  
Qing Wan ◽  
Fu Min Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Electrical Properties ◽  
Ion Beam ◽  
Optical And Electrical Properties ◽  
Oxide Thin Films ◽  
Ion Beam Assisted Deposition ◽  
P Type

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

Mössbauer spectroscopic study of iron–nickel nitrides thin films prepared by ion beam assisted deposition

2011 ◽  
Vol 202 (1-3) ◽  
pp. 47-55
Author(s):  
P. Prieto ◽  
M. Monti ◽  
J. de la Figuera ◽  
J. M. Sanz ◽  
J. F. Marco
Keyword(s):  
Thin Films ◽  
Spectroscopic Study ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Iron Nickel

Structures and properties of copper thin films prepared by ion beam assisted deposition

1996 ◽  
Vol 288 (1-2) ◽  
pp. 300-308 ◽  
Author(s):  
Y. Gotoh ◽  
H. Yoshii ◽  
T. Amioka ◽  
K. Kameyama ◽  
H. Tsuji ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Ion Beam Assisted Deposition ◽  
Structures And Properties
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