Diode-pumped, electro-optically Q-switched, cryogenic Tm:YAG laser operating at 1.88 μm

We present a diode-pumped, electro-optically Q-switched Tm:YAG laser with a cryogenically cooled laser crystal at 120 K. Output pulses of up to 2.55 mJ and 650 ns duration were demonstrated in an actively Q-switched configuration with a repetition rate of 1 Hz. By using cavity dumping the pulse duration was shortened to 18 ns with only a slightly lower output energy of 2.22 mJ. Furthermore, using a simplified rate equation model, we discuss design constraints on the pump fluence in a pulse pump approach for Tm:YAG to maximize the energy storage capability at a given pump power.

Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates

We compared the efficiency droop of InGaN multiple-quantum-well (MQW) blue light-emitting diode (LED) structures grown on silicon(111) and c-plane sapphire substrates and analyzed the efficiency droop characteristics using the rate equation model with reduced effective active volume. The efficiency droop of the LED sample on silicon was observed to be reduced considerably compared with that of the identical LED sample on sapphire substrates. When the measured external quantum efficiency was fitted with the rate equation model, the effective active volume of the MQW on silicon was found to be ~1.45 times larger than that of the MQW on sapphire. The lower efficiency droop in the LED on silicon could be attributed to its larger effective active volume compared with the LED on sapphire. The simulation results showed that the effective active volume decreased as the internal electric fields increased, as a result of the reduced overlap of the electron and hole distribution inside the quantum well and the inhomogeneous carrier distribution in the MQWs. The difference in the internal electric field of the MQW between the LED on silicon and sapphire could be a major reason for the difference in the effective active volume, and consequently, the efficiency droop.

Exploiting the Nonlinear Dynamics of Optically Injected Semiconductor Lasers for Optical Sensing

Optically injected semiconductor lasers are known to display a rich variety of dynamic behaviours, including the emission of excitable pulses, and of rare giant pulses (often referred to as optical rogue waves). Here, we use a well-known rate equation model to explore the combined effect of excitability and extreme pulse emission, for the detection of variations in the strength of the injected field. We find parameter regions where the laser always responds to a perturbation by emitting an optical pulse whose amplitude is above a pre-defined detection threshold. We characterize the sensing capability of the laser in terms of the amplitude and the duration of the perturbation.

A rate equation model for the energy transfer mechanism of a novel multi-color-emissive phosphor, Ca1.624Sr0.376Si5O3N6:Eu2+

A novel multi-color-emissive phosphor (Ca1.624Sr0.376Si5O3N6:Eu2+) and a rate equation model to elucidate the mechanism of energy-transfer leading to broadband emission.